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Features
High linearity and P1dB Unconditionally Stable across load condition Built in adjustable temperature compensated internal bias circuitry With prematch - required simple matching GaAs E-pHEMT Technology [1] Standard QFN 3X3 package 5V supply Excellent uniformity in product specifi cations Tape-and-Reel packaging option available MSL-1 and Lead-free High MTTF for base station application Specifi cations 3.5GHz; 5V, 198mA (typ) 12.8 dB Gain 44.4 dBm Output IP3 28.5 dBm Output Power at 1dB gain compression 51.3% PAE at P1dB 2.7 dB Noise Figure Notes: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 1 Vm
2 Vbias
3 RF in
7 GND
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 70 V ESD Human Body Model = 250 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. This is limited by maximum Vdd and Ids. Derate 27mW/ oC for Tc > 68.6 oC. 3. Thermal resistance measured using Infra-Red measurement technique. Absolute Maximum Rating [1] TA=25C Symbol Parameter Units Absolute Max. Vdd,max Device Voltage, RF output to ground V 5.5 Ids,max Device Drain Current mA 400 Vctrl,max Control Voltage V 5.5 Pin,max CW RF Input Power dBm 22 Pdiss Total Power Dissipation [2] W 2.2 Tj, max Junction Temperature C 150 TSTG Storage Temperature C -65 to 150 Electrical Specifi cations [4] TA = 25 C, Vdd =5V, Vctrl =5V, RF performance at 3.5 GHz, measured on demo board (see Fig.7) unless otherwise speci- fi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ids Quiescent current mA 155 198 250 Ictrl Vctrl current mA - 7 - Gain Gain dB 11 12.8 14 OIP3 [5] Output Third Order Intercept Point dBm 40 44.4 - OP1dB Output Power at 1dB Gain Compression dBm 27 28.5 - PAE Power Added Effi ciency % - 51.3 - NF Noise Figure dB - 2.7 - S11 Input Return Loss, 50Ω source dB - -10 - S22 Output Return Loss, 50Ω load dB - -8.5 - S12 Reverse Isolation dB - -27 - Notes: 4. Measurements at 3.5GHz obtained using demo board described in Figure 6 and 7. 5. 3.5GHz OIP3 test condition: F RF1 - FRF2 = 10MHz with input power of -5dBm per tone measured at worse side band 6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details. Thermal Resistance [3] θjc = 37 C/W (Vdd=5, Ids=200mA, Tc=85ºC)
S-Parameter (Vdd=5V, Vctrl=5V, T=25C, unmatched 50 ohm) Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
Bias Tee, 5V =NU RFin L4=NU L3=NU Vdd =No ConnectVctr =5V Rbias =0 ohm Vdd Vg RFgnd Vm Vbias RFin GNDGND NC NCNC RFout NC N\C NC NC C1=0 Ohm =NU =NU = 0 Ohm C11 = 0 Ohm C7 C9 C8 =NUC10 =10pF Vdd RFout Top ViewNU = Not Used Reference Plane Reference Plane =NU RFout Bias Tee, 5V =NU RFin L4=NU L3=NU Vdd =No ConnectVctr =5V Rbias =0 ohm Vdd Vg RFgnd Vm Vbias RFin GNDGND NC NCNC RFout NC N\C NC NC C1=0 Ohm =NU =NU = 0 Ohm C11 = 0 Ohm C7 C9 C8 =NUC10 =10pF Vdd RFout Top ViewNU = Not Used Reference Plane Reference Plane =NU =NU
Figure 6. Demo board and application schematic
PCB Layout and Stencil Design Notes: 1. All dimensions are in milimeters. Part Number Ordering Information Part Number No. of Devices Container MGA-30316-TR1G 1000 7” Reel MGA-30316-TR2G 3000 13” Reel MGA-30316-BLKG 100 antistatic bag Product Family Output Power Frequency Band 700MHz-1GHz 1.7- 2.7GHz 3.3-3.9GHz 0.5W MGA-30116 MGA-30216 MGA-30316 1W ALM-31122 ALM-31222 ALM-31322 2W ALM-32120 ALM-32220 ALM-32320 PCB Land Pattern (Top View) Stencil Outline Combined PCB & Stencil Layouts Chamfer 0.24 0.325 1.550 0.560 Chamfer 0.06 0.500 0.325 0.230 0.500 0.500 1.550 0.490 0.210 0.350 1.240 1.240 0.490 0.500 0.230 0.210 0.360 1.550 1.240 1.550 1.240 ∅0.260 Chamfer 0.192
0.3 ±0.05 3.3 ±0.1 1.55 ±0.1 1.6±0.1 R 0.3 Typical 1.55 ±0.05 2.0 ±0.1[1] 4.0 ±0.1[2] 1.75 ±0.1 5.5 ±0.1[1] 12.0 ±0.3 3.3±0.18.0 ±0.1 Notes: 1. All dimensions are in milimeters 2. Dimensions are inclusive of plating 3. Dimensions are exclusive of mold fl ash and metal burr Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. Cumulative tolerance of 10 sprocket holes is ±0.20 3. All dimensions in millimeter unless otherwise stated 3.00 ± 0.10 3.00 ± 0.10
0.20 Ref
0.00 ± 0.05 0.85 ± 0.05 30316 YYWW XXXX Top View Side View Bottom View Pin 1 Dot by marking 0.23±0.05
0.50 Bsc
1.55±0.05 Exp.DAP 0.40±0.05 1.55±0.05 Exp.DAP 1.50 Ref. PIN #1 IDENTIFICATION CHAMFER 0.30 X 45°
Ø178.0±0.5 Ø55.0±0.5 6.25mm EMBOSSED LETTERS LETTERING THICKNESS: 1.6mm SEE DETAIL "X" SLOT HOLE "b" SLOT HOLE(2x) 180° APART. SLOT HOLE "a": 3.0±0.5mm(1x) SLOT HOLE "b": 2.5±0.5mm(1x) Ø13.065° 45° R10.65 45° R5.2 EMBOSSED RIBS RAISED: 0.25mm, WIDTH: 1.25mm 18.0* MAX. Ø51.2±0.3 Ø178.0±0.5 RECYCLE LOGO FRONT VIEW 120° 1.5 MIN. Ø20.2 MIN. -0.2 +0.5 DETAIL "X" -0.0 +1.5*12.4 DETAIL "Y"(Slot Hole) 3.5 1.0 SEE DETAIL "Y" FRONT BACK FRONT BACK SLOT HOLE "a" Ø178.0±0.5
For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies Limited. All rights reserved. AV02-1064EN - March 13, 2012 PS 21121110987 203546 6PS PS6 CPN 12MM MPN Detail "X" RECYCLE LOGO SEE DETAIL "X" R19.0±0.5 Ø12.3±0.5(3x) Ø100.0±0.5 Ø329.0±1.0 11.9-15.4** 18.4 MAX.* SLOT 5.0±0.5(3x) 12.4 +2.0* -0.0 16.0mm HEIGHT x MIN. 0.4mm THICK. EMBOSSED LETTERING EMBOSSED LINE (2x) 89.0mm LENGTH LINES 147.0mm AWAY FROM CENTER POINT 7.5mm HEIGHT EMBOSSED LETTERING DATE CODE ESD LOGO Ø16.0 7.5mm HEIGHT EMBOSSED LETTERING HUB Ø100.0±0.5 Ø329.0±1.0 20.2(MIN.) 1.5(MIN.) Ø13.0 -0.2 +0.5 BACK VIEW FRONT VIEW 8 7 6 5