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Features
High linearity and P1dB Unconditionally Stable across load condition Built in adjustable temperature compensated internal bias circuitry With prematch - required simple matching GaAs E-pHEMT Technology [1] Standard QFN 3X3 package 5V supply Excellent uniformity in product specifi cations Tape-and-Reel packaging option available MSL-1 and Lead-free High MTTF for base station application Specifi cations 2GHz; 5V, 206mA (typ) 14.2 dB Gain 45.3 dBm Output IP3 29 dBm Output Power at 1dB gain compression 48.9% PAE at P1dB 2.8 dB Noise Figure Notes: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 300 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. 1 Vm
2 Vbias
3 RF in
7 GND
Absolute Maximum Rating [1] TA=25oC Symbol Parameter Units Absolute Max. Vdd,max Device Voltage, RF output to ground V 5.5 Ids,max Device Drain Current mA 400 Vctrl,max Control Voltage V 5.5 Pin,max CW RF Input Power dBm 22 Pdiss Total Power Dissipation [2] W 2.2 Tj, max Junction Temperature C 150 TSTG Storage Temperature C -65 to 150 Thermal Resistance [3] jc = 36C/W (Vdd=5, Ids=200mA, Tc=85ºC) Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. This is limited by maximum Vdd and Ids. Derate 28mW/ °C for Tc>70.8 °C. 3. Thermal resistance measured using Infra-Red measurement technique. Electrical Specifi cations [4] TA = 25 °C, Vdd =5V, Vctrl =5V, RF performance at 2.0 GHz, measured on demo board (see Fig. 7) unless otherwise specifi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ids Quiescent current mA 155 206 255 Ictrl Vctrl current mA - 7 - Gain Gain dB 13 14.0 16 OIP3 [5] Output Third Order Intercept Point dBm 41 45.3 - OP1dB Output Power at 1dB Gain Compression dBm 27 29 - PAE Power Added Effi ciency % - 48.9 - NF Noise Figure dB - 2.8 - S11 Input Return Loss, 50Ω source dB - -18 - S22 Output Return Loss, 50Ω load dB - -22 - S12 Reverse Isolation dB - -21 - Notes: 4. Measurements at 2.0GHz obtained using demo board described in Figure 6 and 7. 5. 2.0GHz OIP3 test condition: F RF1 - FRF2 = 10MHz with input power of -5dBm per tone measured at worse side band 6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details.
S-Parameter (Vdd=5V, Vctrl=5V, T=25ºC, unmatched 50 ohm) Frequency (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
Figure 6. Demo board and application schematic
Figure 7. Demo board Layout Recommended PCB material is 10 mils Rogers RO4350, with FR4 backing for mechanical strength. Suggested component values may vary according to layout and PCB material.
PCB Layout and Stencil Design Notes: 1. All dimensions are in milimeters. Part Number Ordering Information Part Number No. of Devices Container MGA-30216-TR1G 1000 7” Reel MGA-30216-TR2G 3000 13” Reel MGA-30216-BLKG 100 antistatic bag Product Family Output Power Frequency Band 700MHz-1GHz 1.7- 2.7GHz 3.3-3.9GHz 0.5W MGA-30116 MGA-30216 MGA-30316 1W ALM-31122 ALM-31222 ALM-31322 2W ALM-32120 ALM-32220 ALM-32320 PCB Land Pattern (Top View) Stencil Outline Combined PCB & Stencil Layouts Chamfer 0.24 0.325 1.550 0.560 Chamfer 0.06 0.500 0.325 0.230 0.500 0.500 1.550 0.490 0.210 0.350 1.240 1.240 0.490 0.500 0.230 0.210 0.360 1.550 1.240 1.550 1.240 ∅0.260 Chamfer 0.192
Notes: 1. All dimensions are in milimeters 2. Dimensions are inclusive of plating 3. Dimensions are exclusive of mold fl ash and metal burr CL 0.3 ±0.05 3.3 ±0.1 1.55 ±0.1 ∅1.6 ±0.1 R 0.3 Typical 1.55 ±0.05 2.0 ±0.1[1] 4.0 ±0.1[2] 1.75 ±0.1 5.5 ±0.1[1] 12.0 ±0.3 3.3±0.18.0 ±0.1 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. Cumulative tolerance of 10 sprocket holes is ±0.20 3. All dimensions in millimeter unless otherwise stated Top View Side View Bottom View 3.00 ± 0.10 3.00 ± 0.10 Pin 1 Dot by marking
0.20 Ref
0.00 ± 0.05 0.85 ± 0.05 30216 YYWW XXXX PIN #1 IDENTIFICATION CHAMFER 0.30 X 45°1.55±0.05 Exp.DAP
0.50 Bsc
0.23±0.05 1.50 Ref. 1.55±0.05 Exp.DAP 0.40±0.05
Ø178.0±0.5 Ø55.0±0.5 6.25mm EMBOSSED LETTERS LETTERING THICKNESS: 1.6mm SEE DETAIL "X" SLOT HOLE "b" SLOT HOLE(2x) 180° APART. SLOT HOLE "a": 3.0±0.5mm(1x) SLOT HOLE "b": 2.5±0.5mm(1x) Ø13.065° 45° R10.65 45° R5.2 EMBOSSED RIBS RAISED: 0.25mm, WIDTH: 1.25mm 18.0* MAX. Ø51.2±0.3 Ø178.0±0.5 RECYCLE LOGO FRONT VIEW 120° 1.5 MIN. Ø20.2 MIN. -0.2 +0.5 DETAIL "X" -0.0 +1.5*12.4 DETAIL "Y"(Slot Hole) 3.5 1.0 SEE DETAIL "Y" FRONT BACK FRONT BACK SLOT HOLE "a" Ø178.0±0.5
For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. AV02-1065EN - March 13, 2012 PS 21121110987 203546 6PS PS6 CPN 12MM MPN Detail "X" RECYCLE LOGO SEE DETAIL "X" R19.0±0.5 Ø12.3±0.5(3x) Ø100.0±0.5 Ø329.0±1.0 11.9-15.4** 18.4 MAX.* SLOT 5.0±0.5(3x) 12.4 +2.0* -0.0 16.0mm HEIGHT x MIN. 0.4mm THICK. EMBOSSED LETTERING EMBOSSED LINE (2x) 89.0mm LENGTH LINES 147.0mm AWAY FROM CENTER POINT 7.5mm HEIGHT EMBOSSED LETTERING DATE CODE ESD LOGO Ø16.0 7.5mm HEIGHT EMBOSSED LETTERING HUB Ø100.0±0.5 Ø329.0±1.0 20.2(MIN.) 1.5(MIN.) Ø13.0 -0.2 +0.5 BACK VIEW FRONT VIEW 8 7 6 5