MGA-13316-BLKG

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 11

Technical content

Features

/g120/g3Low noise figure /g120/g3High gain /g120/g3High linearity performance /g120/g3Excellent isolation /g120/g3GaAs E-pHEMT Technology [1] /g120/g3Low cost small package size: 4.0 x 4.0 x 0.85 mm3 /g120/g3Excellent uniformity in product specifications /g120/g3Meets MSL1, Lead-free and halogen free Specifications

2.5 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 116 mA (typ)

/g120/g30.76 dB Noise Figure /g120/g334.3 dB Gain /g120/g350.3 dB RFout Q1 to RFin Q2 Isolation /g120/g341.8 dBm Output IP3 /g120/g323.5 dBm Output Power at 1dB gain compression

Applications

/g120/g3Low noise amplifier for cellular infrastructure including GSM, CDMA, TD-LTE, and W-CDMA. /g120/g3Other very low noise applications. Simplified Schematic Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 90 V ESD Human Body Model = 600 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Notes: Enhancement mode technology employs positive gate bias, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 16 15 14 13 5 6 7 8 Q1 bias Q1 Q2 R4b C10 Vdd1 C9b C6 C3 C5a Vdd2 RFIN RFOUT GND All other pins NC – Not Connected Pin 2 Vbias Pin 3 RFin Q1 Pin 10 RFout Q2 Pin 11 RFout Q2 Pin 13 RFin Q2 Pin 16 RFout Q1

Symbol Parameter Units Absolute Maximum Vdd1 Device Voltage V 5.5 Vdd2 Device Voltage V 5.5 Idd1 Q1 Drain Current mA 90 P d Power Dissipation [2] W 1.19 Pin,max CW RF Input Power dBm 20 Tj,max Junction Temperature °C 150 Tstg Storage Temperature °C -65 to 150 Thermal Resistance Thermal Resistance [3] (Vdd1 = 5.0 V, Idd1 = 53 mA, Vdd2 = 5.0 V, Idd2 = 116 mA), /g84jc = 39.59° C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. This is limited by maximum Vd and Id. Board temperature (T c) is 25° C. For T c >103° C, derate the device power at 25 mW per °C rise in board temperature adjacent to package bottom. 3. Thermal resistance measured using Infra- Red Microscopy Technique. Electrical Specifications [1] RF performance at Vdd1 = 5 V, Vdd2 = 5 V, 2.5 GHz, TA = 25° C, measured on the demo board. Symbol Parameter and Test Condition Units Min. Typ. Max. Idd1 Current at Q1 mA 40 53 68 Idd2 Current at Q2 mA 96 116 138 NF Noise Figure dB – 0.76 1.1 Gain Gain dB 33 34.3 36.3 OIP3 [2] Output Third Order Intercept Point dBm 37 41.8 – OP1dB Output Power at 1 dB Gain Compression dBm 22.1 23.5 – IRL Input Return Loss, 50 /g58 source dB – -19.5 – ORL Output Return Loss, 50 /g58 load dB – -10.5 – |S12| Reverse Isolation dB – 50 – |ISOL 1-2| Isolation between Output pin to Input pin dB – 50.3 – Notes: 1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded from the measurement. 2. OIP3 test condition: f tone1 = 2500 MHz, ftone2 = 2501 MHz with input power of -27 dBm per tone. 3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details.

Figure 7. Demo Board layout diagram. Figure 8. Demo Board schematic diagram. – Recommended PCB material is 10 mils Rogers R04350. Table 1. Component list for 2.5 GHz matching

Figure 20. Notes: Measurements are made on 10 mils Rogers R04350 TRL Board. Figure 20 shows the input and output reference plane for Q1. 8765 103 bias LNA2LNA1 RF input Reference Plane RF output Reference Plane MGA-13316 Q1 Typical Scattering Parameters, Vdd1 = 5 V, Idd1 = 50 mA Freq GHz S11 S21 S12 S22 MGA-13316 Q1 Typical Noise Parameters, Vdd1= 5 V, Idd1 = 50 mA Freq GHz NFMin dB GammaOpt mag PhiOpt deg Rn/50

Figure 21. Notes: Measurements are made on 10 mils Rogers R04350 TRL Board. Figure 21 shows the input and output reference plane for Q2. MGA-13316 Q2 Typical Scattering Parameters, Vdd2 = 5 V, Idd2 = 116 mA Freq GHz S11 S21 S12 S22 MGA-13316 Q2 Typical Noise Parameters, Vdd2 = 5 V, Idd2 = 116 mA Freq GHz NFMin dB GammaOpt mag PhiOpt deg Rn/50

PCB Land Patterns and Stencil Design Notes: 1. All dimensions are in milimeters. 2. 4 mil stencil thickness recommended. LAND PATTERN STENCIL OPENING COMBINATION OF LAND PATTERN & STENCIL OPENING 4.00 0.65 2.70 3.96 2.16 4.00 2.70 4.00 3.96 2.70 2.16 3.96 2.16 0.40 0.30 0.65 0.36 0.27 0.65 0.40 0.30 0.36 0.27 2.70 2.16 Pin #1 Identification Chamfer 0.30 X 45° 0.40 ±0.10 4.00 ±0.10 0.00 –0.10 0.203 Ref. 1.95 Ref.

0.65 Bsc

4.00 ±0.10 Pin 1 Dot By marking 2.70 ±0.10 Exp.DAP 2.70 ±0.10 Exp.DAP 0.85 ±0.10 TOP VIEW SIDE VIEW BOTTOM VIEW AVAGO 13316 YYWW XXXX 0.30 ±0.10

10° MAX 10 ° MAX 5.50 ±0.05 1.75 ±0.10 12.0 ±0.30 –0.10 Ø1.50 ±0.25 2.00 ±0.05 4.00 ±0.10 A. K. B. 0.279 ±0.02 Part Number Ordering Information Part Number No. of Devices Container MGA-13316-TR1G 1000 7” Reel MGA-13316-BLKG 100 antistatic bag

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. AV02-3239EN - December 23, 2011 Reel Dimensions (7 inch reel) PS6 PS BACK VIEW Ø178.0±0.5 Ø55.0±0.5 6.25mm EMBOSSED LETTERS LETTERING THICKNESS: 1.6mm SEE DETAIL "X" SLOT HOLE "b" SLOT HOLE(2x) 180° APART. SLOT HOLE "a": 3.0±0.5mm(1x) SLOT HOLE "b": 2.5±0.5mm(1x) Ø13.065° 45° R10.65 45° R5.2 EMBOSSED RIBS RAISED: 0.25mm, WIDTH: 1.25mm 18.0* MAX. Ø51.2±0.3 Ø178.0±0.5 RECYCLE LOGO FRONT VIEW 120 1.5 MIN. Ø20.2 MIN. -0.2 +0.5 DETAIL "X" -0.0 +1.5*12.4 DETAIL "Y"(Slot Hole) 3.5 1.0 SEE DETAIL "Y" FRONT BACK FRONT BACK SLOT HOLE "a" Ø178.0±0.5