MG800J1US52A MITSUBISHI | Alldatasheet

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HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG800J1US52A OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) ¡UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls 118±0.8 104±0.6 4-M6 JAPAN SENG C E E C E 11±0.6 54±0.6 68±0.8 11±0.6 47±0.6 4-φ6.5±0.3 3-M4 25.5 22.5 +2.3 116±0.8 Weight: 420g 3.5±0.5 66±0.8 CC EE E SEN G Equivalent Circuit Dec.2005

Dec.2005 Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Forward voltage Reverse recovery time Sense Thermal resistance IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Rth(j-c) VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 800mA, VCE = 5V IC = 800A, Tj = 25°C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 300V IC = 800A VGE = ±15V RG = 2Ω (Note 1) IF = 800A, VGE = 0 IF = 800A, VGE = –15V, di/dt = 1500A/µs (Note 1) VSEN – E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V (Note 2) VGE = 15V, IC = 3000A (Note 2) Transistor stage Diode stage 600 ±20 800 1600 800 1600 2500 150 –40 ~ 125 2500 (AC 1 minute) T C = 25°C MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector current Forward current Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque Conditions Unit Ratings V V V A A W V N • m V CES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol ±500 4.0 8.0 2.7 0.3 3.0 0.15 200 0.05 0.1 nA mA V V pF µs V µs nA A V °C/W 7.0 2.1 93000 0.3 0.25 0.55 0.62 0.15 0.77 2.3 0.08 5.5 1300 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Symbol Parameter Test conditions Limits Min. Typ. Max. Unit DC 1ms DC 1ms Terminal (M4/M6) Mounting Turn-on delay time Rise time Turn-on time Turn-off delay time Fall time Turn-off time Sense leakage current Sense start current Sense voltage

Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart Note 2: Sense start current and sense voltage test circuit Test circuit *Measurement in the complete charge period. Timing chart VCC L IF RG RG IC –VGE 10% td(on) IC VGE Irr 90% Irr 90% 90% 10% 20% Irr trr td(off) tf 10% IC 15V VSE 330Ω Inductance VSEN 14.8V 3000A VSE 15V IC IC(SEN-START) VGE Complete charge period

Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS <VCE(sat) Rank> Rank symbol MIN. 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 MAX. 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Rank symbol B C D E F G H MIN. 1.5 1.7 1.9 2.1 2.3 2.5 2.7 MAX. 1.8 2.0 2.2 2.4 2.6 2.8 3.0 <Mark position> Serial No. MG800J1US52 T52AA1 JAPAN SENG C E C E E 22E 000001 VCE(sat), VF Rank Lot No. <VF Rank> VCE(sat) VF

Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES 1600 1200 400 800 002 3 4 51 1600 1200 800 400 002 5 431 0 20048 1 2 1 6 0 20048 1 2 1 6 1600 1200 400 800 004 6 8 1 0 12 142 1600 1200 400 800 002 3 4 51 1215 VGE = 20V VGE = 20V IC = 400A 800A 1600A Tj = 25°C 125°C Tj = 25°C 125°C IC = 400A 800A 1600A IC - VCE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VCE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)GATE-EMITTER VOLTAGE VGE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VGE COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) IF - VF FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) Common emitter Tj = 25°C Common emitter Tj = 125°C Common emitter Tj = 25°C Common emitter Tj = 125°C Common emitter VCE = 5V Common cathode V GE = 0

Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 104 103 102 101 08 1 2 164 104 103 102 101 0 400 600 800200 103 100 101 102 08 1 2 164 102 101 100 0 400 600 800200 103 102 101 01 0 1 5 2 05 103 102 101 0 400 600 800200 Tj = 25°C Tj = 125°C Common emitter VCC = 300V IC = 800A VGE = ±15V Tj = 25°C Tj = 125°C Common emitter VCC = 300V RG = 2Ω VGE = ±15V td(off) toff td(on) tf ton tr toff td(off)ton td(on) tr tf Tj = 25°C Tj = 125°C Common emitter VCC = 300V IC = 800A VGE = ±15V Eoff Eon Tj = 25°C Tj = 125°C Common emitter VCC = 300V RG = 2Ω VGE = ±15V Eon Eoff Tj = 25°C Tj = 125°C Common emitter VCC = 300V IC = 800A VGE = ±15V Irr trr Tj = 25°C Tj = 125°C Common emitter VCC = 300V RG = 2Ω VGE = ±15V Irr trr SW time - RG SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) SW time - IC SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) SW loss - RG SWITCHING LOSS Eon, Eoff (mJ) GATE RESISTANCE RG (Ω) SW loss - IC SWITCHING LOSS Eon, Eoff (mJ) COLLECTOR CURRENT IC (A) Irr, trr - RG PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) GATE RESISTANCE RG (Ω) Irr, trr - IF PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) FORWARD CURRENT IF (A)

Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 500 100 200 300 400 0 1000 2000 3000 4000 5000 6000 106 105 104 103 102 100 23 5 7 23 5 7 101 102 100 10-3 10-2 10-1 10-3 23 5 7 10-1 100 10110-2 101 100 10-1 01 0 1 5 2 05 101 100 10-1 0 400 600 800200 Tj = 25°C Tj = 125°C Common emitter VCC = 300V IC = 800A VGE = ±15V Tj = 25°C Tj = 125°C Common emitter VCC = 300V RG = 2Ω VGE = ±15V Common emitter RL = 0.375Ω Tj = 25°C VGE = 0V f = 1MHz T C = 25°C Cies Cres Coes TC = 25°C 23 5 7 23 5 7 23 5 7 Edsw - RG VCE, VGE - QG COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC) C - VCE CAPACITANCE C (pF) COLLECTOR-EMITTER VOLTAGE VCE (V) Rth - tW TRANSIENT THERMAL RESISTANCE Rth(j-c) (°C/W) PULSE WIDTH tW (s) REVERSE RECOVERY LOSS Edsw (mJ) GATE RESISTANCE RG (Ω) Edsw - IF REVERSE RECOVERY LOSS Edsw (mJ) FORWARD CURRENT IF (A) DIODE STAGE TRANSISTOR STAGE 200100 300 VCE =0V