MG600Q2YS60A MITSUBISHI | Alldatasheet
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Technical content
High Power Switching Applications Motor Control Applications x The electrodes are isolated from case. x Enhancement−mode x Thermal output terminal (TH) Equivalent Circuit TH1 TH2 Fo1 Fo2 E1/C2
Unit: mm Weight: 680 g (typ.)
Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collectoremitter voltage VCES 1200 V Gateemitter voltage VGES ±20 V Collector current DC IC 600 A Forward current DC IF 600 A Collector power dissipation (Tc = 25°C) PC 4300 W Junction temperature Tj 150 °C Storage temperature range Tstg 40~125 °C Isolation voltage VIsol 2500 (AC 1 min) V Terminal: M8 ― 10 N·m Screw torque Mounting: M5 ― 3 N·m Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGES VGE = ±20V, VCE = 0V ― ― ±10 μA Collector cutoff current ICES VCE = 1200V, VGE = 0 ― ― 1 mA Gateemitter cutoff voltage VGE(off) IC = 600mA, VCE = 5V 6.0 6.7 8.0 V Tj = 25°C ― 2.7 3.1 Collectoremitter saturation voltage VCE(sat) IC = 600A VGE = 15V Tj = 125°C ― 3.2 3.5 V Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz ― 41000 ― pF Gateemitter voltage VGE ― 13 15 17 V Gate resistance RG ― 7.5 ― 15 Ω Turnon delay time td(on) ― 0.3 ― Rise time tr ― 0.2 ― Turnon time ton ― 0.5 ― Turnoff delay time td(off) ― 1.3 ― Fall time tf ― 0.1 0.3 Switching time Turnoff time toff Inductive load VCC = 600V IC = 600A VGE = ±15V RG = 7.5Ω (Note) ― 1.4 ― μs Forward voltage VF IF = 600A, VGE = 0V Tj = 125°C ― 2.0 ― V Reverse recovery time trr IF = 600A, VGE = 15V di / dt = 2000A / μs ― 0.3 0.5 μs Transistor stage ― ― 0.029 Thermal resistance Rth(jc) Diode stage ― ― 0.056 °C / W RTC operating current Irtc Tj = 25°C 1200 ― ― A
Characteristic Symbol Test Condition Min. Typ. Max. Unit Zero power resistance R25 Tc 25°C ― 100 ― kΩ B value B25 / 85 Tc 25°C / Tc 85°C ― 4390 ― K Isolation voltage Tc 25°C 2500 ― ― Vrms (Note): Switching time measurement circuit and input / output waveforms VGE RG RG IC IF VCE L VCC VGE IC td(off) 90% 90% 90% 10% 10% 10% toff td(on) ton tf tr trr
IC – VCE Collector-emitter voltage VCE (V) Collector current IC (A) 1000 600 400 200 2 4 6 8 10 800 1200 Common emitter Tj = 25°C VGE = 8V IC – VCE Collector-emitter voltage VCE (V) Collector current IC (A) 800 600 400 200 2 4 6 8 10 1000 1200 Common emitter Tj = 125°C VGE = 8V VCE – VGE Gate-emitter voltage VGE (V) Collector-emitter voltage vce (V) 12 20 8 16 Common emitter Tj = 25°C 1200 600 IC = 300A VCE – VGE Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) 12 24 8 16 Common emitter Tj = 125°C 1200 600 IC = 300A Gate-emitter voltage VGE (V) Collector current IC (A) 1000 600 400 200 4 8 12 16 20 800 1200 Common emitter VCE = 5V Tj = 125°C IC – VGE VCE – VGE Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) 12 20 8 16 Common emitter Tj = 40°C 1200 600 IC = 300A
Gate resistance RG (Ω) Switching Loss – RG Switching loss (mJ) 1000 100 20 10 15 Common emitter VCC = 600V VGE = ±15V IC = 600A : Tj = 25°C : Tj = 125°C Eoff Eon 1200 800 600 400 200 1 2 3 4 5 1000 VCE , VGE – QG Charge QG (nC) Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) 800 600 1000 2000 3000 4000 400 200 Common emitter RL = 1Ω Tj = 25°C VCE = 0 600 400 200 Forward current IF (A) IF – VF Forward voltage VF (V) Common cathode VGE = 0 125 Tj = 25°C Switching Time – IC Collector current IC (A) Switching time (Ps) 10000 100 200 300 400 1000 100 500 600 toff td(off) ton td(on) tr tf Collector current IC (A) Switching Loss – IC Switching loss (mJ) 1000 0 200 300 600 100 100 400 500 Common emitter VCC = 600V VGE = ±15V RG = 7.5Ω : Tj = 25°C : Tj = 125°C Eoff Eon Gate resistance RG (Ω) Switching Time – RG Switching time (Ps) 10000 100 1000 20 10 15 Common emitter VCC = 600V VGE = ±15V : Tj = 25°C IC = 600A : Tj = 125°C toff td(off) ton td(on) tr tf Common emitter VCC = 600V VGE = ±15V : Tj = 25°C RG = 7.5Ω : Tj = 125°C
Rth(j-c) – tw Pulse width tw (s) Transient thermal resistance Rth(j-c) (°C / W) 0.0005 0.001 0.01 0.1 10 0.01 1 0.1 0.001 Tc = 25°C Diode stage Transistor stage trr, Irr – IF Peak reverse recovery current Irr (A) Reverse recovery time trr (ns) Forward crrent IF (A) 1000 0 200 300 600 100 100 400 500 trr Irr Common cathode di / dt = 2000A / Ps VGE = 10V VCC = 600V : Tj = 25°C : Tj = 125°C Edsw – IF Forward crrent IF (A) Reverse recovery loss Edsw (mJ) 10 0 200 300 600 100 400 500 Common cathode di / dt = 2000A / Ps VGE = 10V VCC = 600V : Tj = 25°C : Tj = 125°C C – VCE Collector-emitter voltage VCE (V) Capacitance C (pF) 500000 300 0.01 3000 300000 1000 3 10 100 1 30 100000 0.03 30000 10000 0.1 0.3 Cies Coes Cres Collector-emitter voltage VCE (V) Short Circuit Soa Collector current IC (A) 5000 0 1200 1600 1000 800 400 2000 3000 4000 RG = 7.5Ω VGE = ±15V Tj d 125°C tw 10 Ps Gate resistance RG (:) Short Circuit tw – RG Pulse width tw (s) 4 8 12 20 16 VCC = 950V VGE =±15V Tj = 25°C Common emitter VGE = 0 f = 1MHz Tj = 25°C
Collector–emitter voltage VCE (V) Collector current IC (A) 10000 0 800 1000 1200 100 400 1400 600 200 1000 Tj d 125°C VGE = ±15V RG = 7.5Ω
<VCE(sat) Rank> <VF Rank> VCE(sat) VF Rank Symbol Min. Max. Rank Symbol Min. Max. 21 1.8 2.1 B 1.5 1.8 22 1.9 2.2 C 1.7 2.0 23 2.0 2.3 D 1.9 2.2 24 2.1 2.4 E 2.1 2.4 25 2.2 2.5 F 2.3 2.6 26 2.3 2.6 G 2.5 2.8 27 2.4 2.7 H 2.7 3.0 28 2.5 2.8 I 2.9 3.2 29 2.6 2.9 J 3.1 3.4 30 2.7 3.0 K 3.3 3.6 31 2.8 3.1 32 2.9 3.2 33 3.0 3.3 <Mark Position> MITSUBISHI MG600Q2YS60A 23F22G High side Low side 123456