MG600Q1US59A MITSUBISHI | Alldatasheet

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HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG600Q1US59A OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) ¡UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls 118±0.8 104±0.6 4-M6 JAPAN SENG C E E C E 11±0.6 54±0.6 68±0.8 11±0.6 47±0.6 4-φ6.5±0.3 3-M4 25.5 22.5 +2.3 116±0.8 Weight: 420g 3.5±0.5 66±0.8 CC EE E SEN G Equivalent Circuit Dec.2005

Dec.2005 Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Forward voltage Reverse recovery time Sense Thermal resistance IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Rth(j-c) VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 600mA, VCE = 5V IC = 600A, Tj = 25°C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 600V IC = 600A VGE = ±15V RG = 2Ω (Note 1) IF = 600A, VGE = 0 IF = 600A, VGE = –15V, di/dt = 300A/µs (Note 1) VSEN – E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V (Note 2) VGE = 15V, IC = 2400A (Note 2) Transistor stage Diode stage 1200 ±20 600 1200 600 1200 2750 150 –40 ~ 125 2500 (AC 1 minute) T C = 25°C MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector current Forward current Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque Conditions Unit Ratings V V V A A W V N • m V CES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol ±500 1.0 7.0 3.5 0.3 3.2 0.5 200 13.2 0.045 0.125 nA mA V V pF µs V µs nA A V °C/W 2.5 100000 0.2 0.1 0.3 1.15 0.15 1.3 2.3 4.0 1050 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Symbol Parameter Test conditions Limits Min. Typ. Max. Unit DC 1ms DC 1ms Terminal (M4/M6) Mounting Turn-on delay time Rise time Turn-on time Turn-off delay time Fall time Turn-off time Sense leakage current Sense start current Sense voltage

Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart Note 2: Sense start current and sense voltage test circuit Test circuit *Measurement in the complete charge period. Timing chart VCC L IF RG RG IC –VGE 10% td(on) IC VGE Irr 90% Irr 90% 90% 10% 20% Irr trr td(off) tf 10% IC 15V VSE 330Ω Inductance VSEN 14.8V 2400A VSE 15V IC IC(SEN-START) VGE Complete charge period

Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS <VCE(sat) Rank> Rank symbol MIN. 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 MAX. 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Rank symbol B C D E F G H I MIN. 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 MAX. 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 <Mark position> Serial No. MG600Q1US59 T52AA1 JAPAN SENG C E C E E 25F 000001 VCE(sat), VF Rank Lot No. <VF Rank> VCE(sat) VF

Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES VCE - VGEVCE - VGE IC - VGE IF - VF 1200 800 1000 200 400 600 002 3 4 51 VGE = 20V 1200 600 800 1000 400 200 002 5 431 VGE = 20V 9 1215 0 20048 1 2 1 6 IC = 300A 600A 1200A 0 20048 1 2 1 6 IC = 300A 1200A 600A 1200 1000 800 200 600 400 001 2 2468 1 0 Tj = 25°C 125°C 1200 1000 800 200 600 400 00 3.50.5 1 1.5 2 2.5 3 Tj = 25°C 125°C IC - VCE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VCE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)GATE-EMITTER VOLTAGE VGE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VGE COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) IF - VF FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) Common emitter Tj = 25°C Common emitter Tj = 125°C Common emitter Tj = 25°C Common emitter Tj = 125°C Common emitter VCE = 5V Common cathode V GE = 0

Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 103 102 101 0 200 300 400 500 600100 104 103 102 101 08 1 2 164 ton td(off) toff td(on) tf tr Tj = 25°C Tj = 125°C Common emitter VCC = 600V IC = 600A VGE = ±15V 104 103 102 101 0 200 300 400 500 600100 td(off) toff Tj = 25°C Tj = 125°C Common emitter VCC = 600V RG = 2Ω VGE = ±15V ton td(on) tf tr 103 102 101 100 08 1 2 164 Tj = 25°C Tj = 125°C Common emitter VCC = 600V IC = 600A VGE = ±15V Eoff Eon 103 102 101 100 0 600100 200 300 400 500 Tj = 25°C Tj = 125°C Common emitter VCC = 600V RG = 2Ω VGE = ±15V Eoff Eon 103 102 101 08 1 2 164 Tj = 25°C Tj = 125°C Common emitter VCC = 600V IC = 600A VGE = ±15V Irr trr Tj = 25°C Tj = 125°C Common emitter VCC = 600V RG = 2Ω VGE = ±15V trr Irr SW time - RG SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) SW time - IC SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) SW loss - RG SWITCHING LOSS Eon, Eoff (mJ) GATE RESISTANCE RG (Ω) SW loss - IC SWITCHING LOSS Eon, Eoff (mJ) COLLECTOR CURRENT IC (A) Irr, trr - RG PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) GATE RESISTANCE RG (Ω) Irr, trr - IF PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) FORWARD CURRENT IF (A)

Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TC = 25°C 102 101 100 08 1 2 164 Tj = 25°C Tj = 125°C Common emitter VCC = 600V IC = 600A VGE = ±15V 102 101 100 0 200 300 400 500 600100 Tj = 25°C Tj = 125°C Common emitter VCC = 600V RG = 2Ω VGE = ±15V 1000 800 16 600 12 400 8 200 4 00 70001000 2000 3000 4000 5000 6000 Common emitter RL = 1Ω Tj = 25°C VGE = 0V f = 1MHz T C = 25°C 106 105 104 103 102 100 23 5 7 23 5 7 101 102 Cies Cres Coes 100 10-3 10-2 10-1 10-3 23 5 7 10-1 100 10110-2 23 5 7 23 5 7 23 5 7 Edsw - RG 1000 VCE, VGE - QG COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC) C - VCE CAPACITANCE C (pF) COLLECTOR-EMITTER VOLTAGE VCE (V) Rth - tW TRANSIENT THERMAL RESISTANCE Rth(j-c) (°C/W) PULSE WIDTH tW (s) REVERSE RECOVERY LOSS Edsw (mJ) GATE RESISTANCE RG (Ω) Edsw - IF REVERSE RECOVERY LOSS Edsw (mJ) FORWARD CURRENT IF (A) DIODE STAGE TRANSISTOR STAGE 400200 600 VCE =0V