MG600J2YS61A MITSUBISHI | Alldatasheet

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Technical content

MG600J2YS61A(600V/600A 2in1) High Power Switching Applications Motor Control Applications

  • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
  • The electrodes are isolated from case.
  • Low thermal resistance
  • VCE (sat) = 2.2 V (typ.) Equivalent Circuit Signal terminal 1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open E1/C2 FO FO OT 4
  1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open Signal Terminal Layout 1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open Weight: 375 g 2.54 2.54 25.4 ± 0.6 2.54

Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES ±20 V DC I C 600 Collector current 1 ms I CP 1200 A DC I F 600 Forward current 1 ms I FM 1200 A Inverter Collector power dissipation (Tc = 25°C) P C 2770 W Control voltage (OT) V D 20 V Fault input voltage VF O 20 V Control Fault input current IF O 20 mA Junction temperature T j 150 °C Storage temperature range T stg −40~125 °C Operation temperature range T ope −20~100 °C Isolation voltage V isol 2500 (AC 1 min) V Module Screw torque ⎯ 3 (M5) N ･m Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Symbol Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ + 3/−4 mA Gate leakage current I GES VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA Collector cut-off current I CES V CE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA Gate-emitter cut-off voltage V GE (off) V CE = 5 V, IC = 600 mA 6.0 7.0 8.0 V Collector-emitter saturation voltage V CE (sat) VGE = 15 V, IC = 600 A Tj = 125°C ⎯ ⎯ 2.8 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ⎯ 125 ⎯ nF Turn-on delay time t d (on) 0.10 ⎯ 1.00 Turn-off time t off ⎯ ⎯ 2.00 Switching time Fall time t f ⎯ ⎯ 0.50 Reverse recovery time t rr VCC = 300 V, IC = 600 A VGE = ±15 V, RG = 5.1 Ω (Note 1) ⎯ ⎯ 0.50 µs Forward voltage V F I F = 600 A ⎯ 2.2 2.6 V Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Fault output current OC V GE = 15 V 720 ⎯ ⎯ A Over temperature OT ⎯ 100 ⎯ 125 °C Fault output delay time t d (Fo) V CC = 300 V, VGE = ±15 V ⎯ ⎯ 6.5 µs

  1. Module (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Inverter IGBT stage ⎯ ⎯ 0.045 Junction to case thermal resistance R th (j-c) Inverter FRD stage ⎯ ⎯ 0.068 °C/W Case to fin thermal resistance R th (c-f) With silicon compound ⎯ 0.013 ⎯ °C/W Switching Time Test Circuit Timing Chart IC RG RG L IF −VGE VCC td (on) t d (off) trr 90% 90% 10% 10% tf IC VGE 10% Irr 90% Irr 20% Irr

<Short circuit capability condition> z Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal.

  • VCC < = 375 V
  • RG > = 5.1 Ω
  • Tj < = 125°C <Gate voltage> z To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions. <Recommneded conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage V CC ⎯ 300 375 V Gate voltage V GE 13.8 15 16 V Gate resistance R G 5.1 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz <For parallel use> z For parallel use of this product, please use the same rank for both V CE (sat) and VF among IGBT in parallel without fail. VCE (sat) VCE (sat) Min Max 20 1.8 2.0 22 1.9 2.2 24 2.1 2.4 26 2.3 2.5 VF VF Min Max D 1.9 2.2 E 2.1 2.4 F 2.3 2.6

Tj = 125°C 5 1 2 3 4 100 300 400 600 VGE = 20 V 9 V 500 200

10 V12 V

Tj = 25°C 5 1 2 3 4 100 300 400 600 VGE = 20 V 9 V 500 200 10 V 12 V 15 V Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector-emitter voltage V CE (V) Collector current I C (A) IC – VCE

Tj = 125°C 300 A IC = 900 A 600 A Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) 20 5 10 15 Common emitter Tj = 25°C 300 A IC = 900 A 600 A Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE ( V ) 20 5 10 15 Common emitter Tj = 40°C 300 A IC = 900 A 600 A

VCE = 5 V 12 4 8 400 600 1000 −40 C 800 200 Tj = 125°C 25°C −40°C 125°C Common cathode VGE = 0 3 1 2 100 300 400 600 500 200 Tj = 25°C 0.5 1.5 2.5 Forward voltage V F (V) Forward current I F (A) IF – VF Gate-emitter voltage V GE (V) IC – VGE Collector current I C ( A )

VCC = 300 V IC = 600 A T j = 25°C VGE = ±15 V T j = 125°C tf 100 25 10 300 1000 3000 10000 5 15 20 tr toff ton td (on) td (off) Gate resistance R G ( Ω) Switching time – RG Switching time (ns) Collector current I C (A) Switching time (ns) Switching time – IC Common emitter VCC = 300 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C 700 200 1000 10000 100 300 500 tf td (on) 3000 100 300 400 600 tr ton toff td (off)

Collector current I C (A) Switching loss E on, Eoff (mJ) Eon, Eoff – IC Gate resistance R G ( Ω) Eon, Eoff – RG Switching loss E on, Eoff (mJ) Common emitter VCC = 300 V IC = 600 A T j = 25°C VGE = ±15 V T j = 125°C 25 10 100 300 1000 5 15 20 Eoff Eon 700 300 100 100 400 600 Eoff Eon Common emitter VCC = 300 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C 200 500

VCC = 300 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C 600 200 100 300 1000 100 300 500 Irr trr 400 Forward current IF (A) Irr, trr – IF Reverse recovery time trr (ns) Reveres recovery current Irr ( A ) Forward current I F (A) Reveres recovery loss Edsw (mJ) Edsw – IF 0.10 700 300 0.30 1.00 3.00 10.00 100 400 600200 500 Common emitter VCC = 300 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C

RL = 0.5 Ω Tj = 25°C 6000 2000 100 200 400 500 1000 3000 5000 4000 300 VCE = 0 100 V 300 V 200 V Capacitance C (pF) Charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) C – VCE Gate-emitter voltage V GE ( V ) VGE = 0 V f = 1 MHz Tc = 25°C 0.01 100 100 1000 3000 100000 1000000 0.1 1 10 10000 Cres Coes Cies 30000 300000 300

0.001 0.001 0.01 0.1 1 10 0.1 0.01 Diode stage Transistor stage Tc = 25°C Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C ( A ) Pulse width t w (s) Rth (j-c) (°C/W) Rth – tw Tj = 125°C RG = 5.1Ω VGE = ±15 V 700 1000 10000 200 600 100 300 3000 100 300 400 500