MG400V2YS60A MITSUBISHI | Alldatasheet
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Technical content
High Power Switching Applications Motor Control Applications
- The electrodes are isolated from case.
- Enhancement−mode
- Thermal output terminal (TH) Equivalent Circuit TH1 TH2 Fo1 Fo2 E1/C2
Unit: mm Weight: 680 g (typ.)
Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector−emitter voltage V CES 1700 V Gate−emitter voltage V GES ±20 V Collector current DC I C 400 A Forward current DC I F 400 A Collector power dissipation (Tc = 25°C) PC 4300 W Junction temperature T j 150 °C Storage temperature range T stg −40~125 °C Isolation voltage V Isol 4000 (AC 1 min) V Terminal: M8 ― 10 N·m Screw torque Mounting: M5 ― 3 N·m Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Gate leakage current I GES V GE = ±20V, VCE = 0V ― ― ±10 µA Collector cut−off current I CES V CE = 1700V, VGE = 0V ― ― 1 mA Gate−emitter cut−off voltage V GE(off) I C = 400mA, VCE = 5V 4.5 5.5 6.5 V Tj = 25°C ― 3.0 3.4 Collector−emitter saturation voltage VCE(sat) IC = 400A VGE = 15V Tj = 125°C ― 3.8 4.2 V Input capacitance C ies VCE = 10V, VGE = 0V, f = 1MHz ― 45000 ― pF Gate−emitter voltage V GE ― 13 15 17 V Gate resistance R G ― 8.2 ― 15 Ω Turn−on delay time t d(on) ― 0.35 ― Rise time t r ― 0.2 ― Turn−on time t on ― 0.55 ― Turn−off delay time t d(off) ― 0.9 ― Fall time t f ― 0.4 0.6 Switching time Turn−off time t off Inductive load VCC = 900V IC = 400A VGE = ±15V RG = 8.2Ω (Note) ― 1.3 ― µs Forward voltage V F IF = 400A, VGE = 0V Tj = 125°C ― 2.4 ― V Reverse recovery time t rr IF = 400A, VGE = −15V di/dt = 2000A/µs ― 0.20 0.40 µs Transistor stage ― ― 0.029 Thermal resistance R th(j−c) Diode stage ― ― 0.056 °C / W RTC operating current I rtc T j = 25°C 800 ― ― A
Characteristic Symbol Test Condition MIn. Typ. Max. Unit Zero power resistance R25 Tc = 25°C ― 100 ― k Ω B value R25 / 85 Tc = 25°C / Tc = 85°C ― 4390 ― K Isolation voltage Tc = 25°C 2500 ― ― Vrms (Note) : Switching time measurement circuit and input / output waveforms −VGE RG RG IC IF VCE L VCC VGE IC td(off) 90% 90% 90% 10% 10% 10% toff td(on) ton tf tr trr
IC – VCE Collector-emitter voltage V CE (V) Collector current I C ( A ) 800 600 400 200 2 4 6 8 10 Common emitter Tj = 25°C VGE = 8V 910 VCE – VGE Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) 12 20 8 16 Common emitter Tj = 25°C 800 400 IC = 200A IC – VCE Collector-emitter voltage V CE (V) Collector current I C ( A ) 800 600 400 200 2 4 6 8 10 Common emitter Tj = 125°C VGE = 8V 9 10 20 12 VCE – VGE Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) 12 20 8 16 Common emitter Tj = 125°C 800 400 IC = 200A IC – VGE Gate-emitter voltage V GE (V) Collector current I C (A) Tj = 25°C 125 Common emitter VCE = 5V
IF – VF Forward voltage V F (V) Forward current I F (A) 1000 800 600 400 200 1 2 3 4 5 Common cathode VGE = 0
125 Tj = 25°C
VCE , VGE –QG Charge Q G (nC) Collector-emitter voltage V CE ( V ) Gate-emitter voltage V GE (V) 1000 800 600 500 1000 1500 2000 400 200 Common emitter RL = 2.25Ω Tj = 25°C VCE = 0 900 600300 Gate resistance R G ( Ω) Switching Loss – RG Switching loss (mJ) 10000 100 1000 12 16 8 10 14 Common emitter VCC = 900V VGE = ±15V IC = 400A : Tj = 25°C : Tj = 125°C Eoff Eon Switching Loss – IC Collector current I C (A) Switching loss (mJ) 1000 0 200 300 400 100 100 Common emitter VCC = 900V VGE = ±15V RG = 8.2Ω : Tj = 25°C : Tj = 125°C Eoff Eon Switching Time – IC Collector current I C (A) Switching time (µs) 10000 100 200 300 400 1000 100 Common emitter VCC = 900V VGE = ±1 5 V : T j = 2 5 ° C RG = 8.2Ω : T j = 1 2 5 ° C toff td(off)tf ton td(on) tr Gate resistance R G ( Ω) Switching Time – RG Switching time (µs) 10000 100 1000 12 16 8 10 14 toff td(off) ton td(on) tr tf Common emitter VCC = 900V VGE = ±1 5 V : T j = 2 5 ° C IC = 400A : Tj = 125°C
Gate resistance R G ( Ω) Short Circuit tw – RG Pulse width t w (s) 4 8 12 16 Edsw – IF Forward crrent I F (A) Reverse recovery loss E dsw ( m J ) 100 0 200 300 400 100 Common cathode di / dt = 2000A / µs VGE = −10V VCC = 900V : Tj = 25°C : Tj = 125°C Rth(j-c) – tw Pulse width t w (s) Transient thermal resistance Rth(j-c) ( °C / W) 0.0005 0.001 0.01 0.1 10 0.01 1 0.1 0.001 Tc = 2 5 ° C Diode stage Transistor stage Short Circuit Soa Collector-emitter voltage V CE (V) Collector current I C (A) 10000 100 1200 1600 2000 1000 800 400 VCC = 900V RG = 8.2Ω VGE = ±15V tw ≤ 10µs Tj ≤ 125°C VCC = 1200V VGE =±15V Tj = 125°C trr, Irr – IF Peak reverse recovery current I rr ( A ) Reverse recovery time t rr ( n s ) Forward crrent I F (A) 1000 0 200 300 400 100 100 trr Irr Common cathode di / dt = 2000A / µs VGE = −10V VCC = 900V : Tj = 25°C : Tj = 125°C C – VCE Collector-emitter voltage V CE (V) Capacitance C (pF) 100000 300 0.1 3000 30000 1000 3 10 100 1 30 10000 0.3 Cies Coes Cres Common emiter VGE = 0 F = 1MHz Tj = 25°C
Collector–emitter voltage V CE (V) Collector current I C (A) 1000 0 800 1200 1600 100 400 2000 Tj ≤ 125°C VGE = ±15V RG = 8.2Ω
<VCE(sat) Rank> <V F Rank> VCE(sat) VF Rank Symbol Min. Max. Rank Symbol Min Max. 29 2.6 2.9 G 2.5 2.8 30 2.7 3.0 H 2.7 3.0 31 2.8 3.1 I 2.9 3.2 32 2.9 3.2 J 3.1 3.4 33 3.0 3.3 K 3.3 3.6 34 3.1 3.4 L 3.5 3.8 M 3.7 4.0 N 3.9 4.2 <Mark Position> MITSUBISHI MG400V2YS60A 29H30H High side Low side 123456