MG400V1US51A

MG400V1US51A MITSUBISHI | Alldatasheet

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HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG400V1US51A OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) ¡UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls 118±0.8 104±0.6 4-M6 JAPAN SENG C E E C E 11±0.6 54±0.6 68±0.8 11±0.6 47±0.6 4-φ6.5±0.3 3-M4 25.5 22.5 +2.3 116±0.8 Weight: 420g 3.5±0.5 66±0.8 CC EE E SEN G Equivalent Circuit Dec.2005

Dec.2005 Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Forward voltage Reverse recovery time Sense Thermal resistance IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Rth(j-c) VGE = ±20V, VCE = 0 VCE = 1700V, VGE = 0 IC = 400mA, VCE = 5V IC = 400A, Tj = 25°C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 900V IC = 400A VGE = ±15V RG = 2Ω (Note 1) IF = 400A, VGE = 0 IF = 400A, VGE = –15V, di/dt = 1500A/µs (Note 1) VSEN – E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V (Note 2) VGE = 15V, IC = 2400A (Note 2) Transistor stage Diode stage 1700 ±20 400 800 400 800 2750 150 –40 ~ 125 4000 (AC 1 minute) T C = 25°C MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector current Forward current Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque Conditions Unit Ratings V V V A A W V N • m V CES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol ±500 4.0 8.0 4.5 1.0 5.5 0.6 200 13.2 0.045 0.125 nA mA V V pF µs V µs nA A V °C/W 3.2 51200 0.14 0.07 0.21 0.49 0.28 0.77 4.0 0.3 4.0 1050 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Symbol Parameter Test conditions Limits Min. Typ. Max. Unit DC 1ms DC 1ms Terminal (M4/M6) Mounting Turn-on delay time Rise time Turn-on time Turn-off delay time Fall time Turn-off time Sense leakage current Sense start current Sense voltage

Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart Note 2: Sense start current and sense voltage test circuit Test circuit *Measurement in the complete charge period. Timing chart VCC L IF RG RG IC –VGE 10% td(on) IC VGE Irr 90% Irr 90% 90% 10% 20% Irr trr td(off) tf 10% IC 15V VSE 330Ω Inductance VSEN 14.8V 2400A VSE 15V IC IC(SEN-START) VGE Complete charge period

Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS <VCE(sat) Rank> Rank symbol MIN. 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 MAX. 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 Rank symbol A B C D E MIN. 4.5 4.0 3.5 3.0 2.5 MAX. 5.5 4.7 4.2 3.7 3.2 <Mark position> Serial No. MG400V1US51 T52AA1 JAPAN SENG C E C E E 34C 000001 VCE(sat), VF Rank Lot No. <VF Rank> VCE(sat) VF

Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES 800 600 200 400 004 6 8 1 02 800 600 400 200 004 1 0 862 1220 Common emitter Tj = 25°C VGE = 8V VGE = 8V 0 2016048 1 2 IC = 800A 200 400 800 640 320 160 480 008 1 2 16 204 Tj = 125°C 800 600 200 400 004 6 8 1 02 Tj = 125°C 0 2016048 1 2 IC = 800A 200 400 25 25 Common emitter Tj = 125°C IC - VCE COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Common emitter VCE = 5V IC - VCE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) IF - VF FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) Common cathode VGE = 0V Common emitter T j = 25°C Common emitter Tj = 125°C

Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 104 103 101 102 100 08 1 2 164 SW time - RG SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) SW time - IC ton td(off) toff td(on) tf tr Tj = 25°C Tj = 125°C Common emitter VCC = 900V IC = 400A VGE = ±15V 103 102 101 100 0 200 300 400100 SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) td(off) toff Tj = 25°C Tj = 125°C Common emitter VCC = 900V RG = 2Ω VGE = ±15V ton td(on) tf 103 100 101 102 08 1 2 164 SW loss - RG SWITCHING LOSS Eon, Eoff (mJ) GATE RESISTANCE RG (Ω) 102 101 100 0 200 300 400100 SW loss - IC SWITCHING LOSS Eon, Eoff (mJ) COLLECTOR CURRENT IC (A) Eoff Eoff Eon Eon 103 102 101 08 1 2 164 Irr, trr - RG PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) GATE RESISTANCE RG (Ω) Irr trr 103 102 101 0 200 300 400100 Irr, trr - IF PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) FORWARD CURRENT IF (A) Irr trr tr Tj = 25°C Tj = 125°C Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C Common emitter VCC = 900V RG = 2Ω VGE = ±15V Tj = 25°C Tj = 125°C Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C Common emitter VCC = 900V RG = 2Ω VGE = ±15V

Dec.2005 MITSUBISHI IGBT MODULES MG400V1US51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Edsw - RG 1000 200 400 600 800 0 1000 1500 2000 2500500 V CE, VGE - QG COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC) Common emitter RL = 2.25Ω Tj = 25°C VGE = 0V f = 1MHz T C = 25°C 105 102 103 104 100 23 5 7 23 5 7 101 102 C - VCE CAPACITANCE C (pF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Cres Coes Rth - tW TRANSIENT THERMAL RESISTANCE Rth(j-c) (°C/W) PULSE WIDTH tW (s) DIODE STAGE TRANSISTOR STAGE 102 101 100 08 1 2 164 REVERSE RECOVERY LOSS Edsw (mJ) GATE RESISTANCE RG (Ω) Edsw - IF 102 101 100 0 200 300 400100 REVERSE RECOVERY LOSS Edsw (mJ) FORWARD CURRENT IF (A) TC = 25°C100 10-3 10-2 10-1 10-3 23 5 7 10-1 100 10110-2 23 5 7 23 5 7 23 5 7 Tj = 25°C Tj = 125°C Common emitter VCC = 900V IC = 400A VGE = ±15V Tj = 25°C Tj = 125°C Common emitter VCC = 900V RG = 2Ω VGE = ±15V 600300 900 VCE =0V