MG400Q2YS60A MITSUBISHI | Alldatasheet

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Technical content

High Power Switching Applications Motor Control Applications

  • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
  • The electrodes are isolated from case.
  • Low thermal resistance.
  • VCE (sat) = 2.4 V (typ.) Equivalent Circuit Signal terminal 1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open E1/C2 FO FO OT 4
  1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open Signal Terminal Layout 1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open Weight: 375 g 2.54 2.54 25.4 ± 0.6 2.54

Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES ±20 V DC I C 400 Collector current 1 ms I CP 800 A DC I F 400 Forward current 1 ms I FM 800 A Inverter Collector power dissipation (Tc = 25°C) P C 3750 W Control voltage (OT) V D 20 V Fault input voltage VF O 20 V Control Fault input current IF O 20 mA Junction temperature T j 150 °C Storage temperature range T stg −40~125 °C Operation temperature range T ope −20~100 °C Isolation voltage V isol 2500 (AC 1 min) V Module Screw torque ⎯ 3 (M5) N ･m Electrical Characteristics (Tj = 25°C) 1. Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ + 3/−4 mA Gate leakage current I GES VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA Collector cut-off current I CES V CE = 1200 V, VGE = 0 ⎯ ⎯ 1.0 mA Gate-emitter cut-off voltage V GE (off) V CE = 5 V, IC = 400 mA 6.0 7.0 8.0 V Collector-emitter saturation voltage V CE (sat) VGE = 15 V, IC = 400 A Tj = 125°C ⎯ ⎯ 3.2 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ⎯ 31000 ⎯ pF Turn-on delay time t d (on) 0.10 ⎯ 1.00 Turn-off time t off ⎯ ⎯ 2.00 Switching time Fall time t f ⎯ ⎯ 0.50 Reverse recovery time t rr VCC = 600 V, IC = 400 A VGE = ±15 V, RG = 5.1 Ω (Note 1) (See page 4) ⎯ ⎯ 0.50 µs Forward voltage V F I F = 400 A ⎯ 2.4 2.8 V Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Fault output current OC V GE = 15 V 480 ⎯ ⎯ A Over temperature OT ⎯ 100 ⎯ 125 °C Fault output delay time t d (Fo) V CC = 600 V, VGE = ±15 V ⎯ ⎯ 8 µs

  1. Module (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Inverter IGBT stage ⎯ ⎯ 0.033 Junction to case thermal resistance R th (j-c) Inverter FRD stage ⎯ ⎯ 0.068 °C/W Case to fin thermal resistance R th (c-f) With silicon compound ⎯ 0.013 ⎯ °C/W Switching Time Test Circuit Timing Chart IC RG RG L IF −VGE VCC td (on) t d (off) trr 90% 90% 10% 10% tf IC VGE 10% Irr 90% Irr 20% Irr

<Short circuit capability condition > z Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal.

  • VCC < = 750 V
  • RG > = 5.1 Ω
  • Tj < = 125°C <Gate voltage > z To use this product, VGE must be provided higher than 14.8 V In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. <Recommended conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage V CC ⎯ 600 750 V Gate voltage V GE 14.8 15 17 V Gate resistance R G 5.1 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz <For parallel use> z For parallel use of this product, please use the same rank for both V CE (sat) and VF among IGBT in parallel without fail. VCE (sat) V F Min Max 24 E 2.1 2.4 26 F 2.3 2.6 28 G 2.5 2.8

Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Collector current I C ( A ) 0 1 5 400 600 2 3 4 200 800 8 V Common emitter Tj = 25°C VGE = 20 V 12 V 15 V 9 V 10 V 0 1 5 400 600 2 3 4 200 800 VGE = 20 V

15 V Common emitter

Tj = 125°C 12 V 10 V 9 V 8 V 0 5 10 15 20 IC = 800 A Common emitter Tj = 25°C 400 A 200 A 0 5 10 15 20 IC = 800 A Common emitter Tj = 125°C 400 A 200 A 0 5 10 15 20 IC = 800 A Common emitter Tj = −40°C 400 A 200 A 0 4 8 12 200 400 800 600 25°C Tj = 125°C −40°C Common emitter VCE = 5 V

SW time (ns) SW loss E on, Eoff (mJ) Forward voltage V F (V) IF – VF Forward current I F (A) Gate-emitter voltage V GE ( V ) Charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Gate resistance R G ( Ω) SW time – RG SW time (ns) Gate resistance R G ( Ω) Eon, Eoff – RG Collector current I C (A) SW time – IC Collector current I C (A) Eon, Eoff – IC SW loss E on, Eoff (mJ) 25°C −40°C 0 1 400 600 2 3 4 200 800 Common cathode VGE = 0 V Tj = 125°C 0 1000 3000 200 400 600 800 1000 2000 600 V Common emitter RL = 1.5 Ω Tj = 25°C 400 V 200 V VCC = 0 V 0 5 10 15 20 100 1000 10000 toff ton td (on) tr tf td (off) Common emitter VCC = 600 V IC = 400 A T j = 25°C VGE = ±15 V T j = 125°C 0 5 10 15 20 100 1000 Eoff Eon Common emitter VCC = 600 V IC = 400 A T j = 25°C VGE = ±15 V T j = 125°C 0 100 200 300 400 100 1000 10000 toff ton td (on) tr tf td (off) Common emitter VCC = 600 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C 0 100 200 300 400 100 Common emitter VCC = 600 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C Eoff Eon

Collector current I C ( A ) Collector current I C ( A ) Forward current I F (A) Irr, trr – IF Reverse recovery time t rr (ns) Reverse recovery current I rr ( A ) Forward current I F (A) Edsw – IF Reverse recovery loss E dsw ( m J ) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Collector-emitter voltage V CE (V) Safe-operating area Collector-emitter voltage V CE (V) Reverse bias SOA Pulse width t w (s) Rth – tw Rth (j-c) ( ° C / W ) 0 100 200 300 400 100 1000 Common cathode VCC = 600 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C trr Irr 0 100 200 300 400 100 Common cathode VCC = 600 V RG = 5.1 Ω T j = 25°C VGE = ±15 V T j = 125°C 100 0.01 0.1 1 10 100 1000 10000 100000 Common emitter VGE = 0 V f = 1 MHz Tj = 25°C Cies Coes Cres 1 10 100 1000 10000 100 1000 IC max (pulsed)* *: Single nonrepetitive pulse T c = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) 100 µs∗ 50 µs∗ 1 ms∗ 200 600 800 400 800 1200 400 Tj <= 125°C RG = 5.1 Ω VGE = ±15 V 0.001 0.001 0.01 0.1 1 10 0.01 0.1 Diode stage Transistor stage TC = 25°C