MG400J2YS61A MITSUBISHI | Alldatasheet

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Technical content

MG400J2YS61A(600V/400A 2in1) High Power Switching Applications Motor Control Applications

  • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)
  • The electrodes are isolated from case.
  • Low thermal resistance
  • VCE (sat) = 1.9 V (typ.) Equivalent Circuit Signal terminal 1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open E1/C2 FO FO OT 4
  1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open Signal Terminal Layout 1. G (L) 2. F O (L) 3. E (L) 4. V D 5. G (H) 6. F O (H) 7. E (H) 8. Open Weight: 375 g 2.54 2.54 25.4 ± 0.6 2.54

Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES ±20 V DC I C 400 Collector current 1 ms I CP 800 A DC I F 400 Forward current 1 ms I FM 800 A Inverter Collector power dissipation (Tc = 25°C) P C 2160 W Control voltage (OT) V D 20 V Fault input voltage VF O 20 V Control Fault input current IF O 20 mA Junction temperature T j 150 °C Storage temperature range T stg −40~125 °C Operation temperature range T ope −20~100 °C Isolation voltage V isol 2500 (AC 1 min) V Module Screw torque ⎯ 3 (M5) N·m Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Symbol Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ + 3/−4 mA Gate leakage current I GES VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA Collector cut-off current I CES V CE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA Gate-emitter cut-off voltage V GE (off) V CE = 5 V, IC = 400 mA 6.0 7.0 8.0 V Collector-emitter saturation voltage V CE (sat) VGE = 15 V, IC = 400 A Tj = 125°C ⎯ ⎯ 2.5 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ⎯ 85 ⎯ nF Turn-on delay time t d (on) 0.10 ⎯ 1.00 Turn-off time t off ⎯ ⎯ 2.00 Switching time Fall time t f ⎯ ⎯ 0.25 Reverse recovery time t rr VCC = 300 V, IC = 400 A VGE = ±15 V, RG = 7.5 Ω (Note 1) ⎯ ⎯ 0.50 µs Forward voltage V F I F = 400 A ⎯ 1.8 2.2 V Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Fault output current OC V GE = 15 V 480 ⎯ ⎯ A Over temperature OT ⎯ 100 ⎯ 125 °C Fault output delay time t d (Fo) V CC = 300 V, VGE = ±15 V ⎯ ⎯ 6.5 µs

  1. Module (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Inverter IGBT stage ⎯ ⎯ 0.057 Junction to case thermal resistance R th (j-c) Inverter FRD stage ⎯ ⎯ 0.068 °C/W Case to fin thermal resistance R th (c-f) With silicon compound ⎯ 0.013 ⎯ °C/W Switching Time Test Circuit Timing Chart IC RG RG L IF −VGE VCC td (on) t d (off) trr 90% 90% 10% 10% tf IC VGE 10% Irr 90% Irr 20% Irr

<Short circuit capability condition>

  • Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal.
  • VCC < = 375 V
  • RG > = 7.5 Ω
  • Tj < = 125°C <Gate voltage>
  • To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions. <Recommneded conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage V CC ⎯ 300 375 V Gate voltage V GE 13.8 15 16 V Gate resistance R G 7.5 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz

Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector-emitter voltage V CE (V) Collector current I C (A) IC – VCE Common emitter Tj = 25°C 5 1 2 3 4 100 200 300 400 VGE = 20 V 8 V 9 V 10 V 15 V 12 V Common emitter Tj = 125°C 5 1 2 3 4 100 200 300 400 VGE = 20 V 8 V 10 V 12 V 9 V 15 V

Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE IC = 200 A 600 A 20 4 8 12 16 Common emitter Tj = 25°C 400 A IC = 200 A 600 A 20 4 8 12 16 Common emitter Tj = 125°C 400 A IC = 200 A 600 A 20 4 8 12 16 Common emitter Tj = 40°C 400 A

Gate-emitter voltage V GE (V) IC – VGE Collector current I C ( A ) Forward voltage V F ( V ) Forward current I F (A) IF – VF Common emitter VCE = 5 V 16 4 8 12 200 400 600 125°C Tj = 25°C −40°C Common cathode 0.0 100 200 300 400 Tj = 125°C Tj = 25°C

Gate resistance R G ( Ω) Switching time – RG Switching time ( µs) Collector current I C (A) Switching time ( µs) Switching time – IC 0.01 25 5 10 15 0.05 0.3 td (off) 0.1 0.5 0.03 Common emitter VCC = 300 V IC = 150 A T j = 25°C VGE = ± 15 V T j = 125°C tf tr td (on) ton toff 0.01 500 0.05 0.3 td (off) 0.1 0.5 0.03 Common emitter VCC = 300 V RG = 7.5 Ω T j = 25°C VGE = ± 15 V T j = 125°C tf tr td (on) ton toff 100 200 300 400

Gate resistance R G ( Ω) Switching loss – RG Switching loss (mJ) Collector current I C (A) Switching loss (mJ) Switching loss – IC Common emitter VCC = 300 V IC = 150 A T j = 25°C VGE = ±15 V T j = 125°C Eon Eoff 25 5 10 100 500 300 2015 Common emitter VCC = 300 V RG = 7.5 Ω T j = 25°C VGE = ±15 V T j = 125°C Eon Eoff 500 100 200 400 100 3000

Forward current I F (A) trr, Irr – IF Reverse recovery time t rr (ns) Peak reverse recovery current I rr ( A ) Forward current I F (A) Reverse recovery loss E dsw ( m J ) Edsw – IF Common emitter VCC = 300 V RG = 7.5 Ω T j = 25°C VGE = ± 15 V T j = 125°C trr Irr 500 100 200 400 100 300 1000 500 300 Common emitter VCC = 300 V RG = 7.5 Ω T j = 25°C VGE = ± 15 V T j = 125°C 0.1 500 100 200 400 0.3 0.5 300

Charge Q G ( n C ) QG Collector emitter voltage V CE (V) Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) Capacitance C (pF) C – VCE Common emitter RL = 0.75 Ω Tj = 25°C 400 100 200 300 100 200 400 500 300 VGE = 0 V f = 1 MHz Tc = 25°C 100 100 0.1 1 10 1000 3000 100000 300000 300 500 5000 10000 30000 50000 Cies Coes Cres

Collector-emitter voltage (V) Reverse bias SOA Collector current I C ( A ) Pulse width t w (s) Rth (j-c) ( ° C / W ) Rth – tw 800 200 400 600 200 400 800 1000 600 Tc = 25°C 0.001 0.001 10 0.01 0.1 1 0.01 0.1 0.3 0.003 0.005 0.03 0.05 0.5 Diode stage Transistor stage