MFE211 NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS .. . high Yfs depletion mode dual gate transistors designed for VHP amplifier and mixer applications. » MFE211 — VHF Amplifier/IF Amplifier MFE212 — VHF Mixer a High Forward Transfer Admittance — !Yfs| = 17-40 mmhos 0 Low Reverse Transfer Capacitance — Crsg = 0.03 pp (Max) *> Diode Protected Gates MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate Current Drain Current — Continuous Total Power Dissipation in TA = 25"C Derate above 25'C Total Power Dissipation <« TC = 25'C Derate above 25°C Storage Channel Temperature flange Junction Temperature Range Lead Temperature, 1/16" From Seated Surface for 10 Seconds Symbol VDSX VDQI VDG2 IQ1 iG2 PD PD Tstg Tj TL Value ±10 -10 360 2.4 1.2 8.0 - 65 to + 200 -65to +175 300 Unit Vdc Vdc mAdc mAdc mW mwrc Watt mVWC MFE211 MFE212 CASE TO-72 DUAL-GATE MOSFETs N-CHANNEL — DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.l | Symbol | Mln | Mm j Unit Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID - lOuAdc. VQIS - VG2S = -".OVdcl Gate 1 — Source Breakdown Voltage(l) IIG1 - - 10 mAdc, VG2S - VDS ' °l Gate 2 — Source Breakdown VoltageO) UG2 = ±10mAdc, VG1S = VDS - °l Gate 1 to Source Cutoff Voltage MFE21 1 (VDS • 15 Vdc. VG2S = 1.0 Vdc, ID = 20 pAdc) MFE212 Gate 2 to Source Cutoff Voltage MFE21 1 IVrjs =» t5Vdc,VGls - 0, ID . 20(iAdc) MFE212 Gate 1 Leakage Cbrrent WGIS - =5.0 Vdc. VG2S - VDS * 01 (VGIS = -5-n vdc, VG2S =• VDS " ". TA - iso°ci Gate 2 Leakage Current IVG2S " * 5.0 Vdc. VG1S = VDS - ol IVG2S = -5.0 vdc, VGIS = VDS = °. TA = 15o-ci ON CHARACTERISTICS Tero-Gate Voltage Drain Currerit{2) IVDS . 15 Vdc. VG1s - 0, VQ2S * 4.0Vdcl VIBRIDSX V(BRIG1SO V(BR)G2SO VQiS(off| vG2S(offl IGISS 'G2SS ±6.0 ±6.0 -0.5 -0.5 -0.2 -0.2 -s.s -4.0 -2.5 -4.0 ±10 ±10 -10 Vdc Vdc Vdc Vdc Vdc mAdc MAdc nAdc pAdc IDSS 6.0 | 40 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance^) (Vos =• '5 Vdc. VG2s • 4.0 Vdc, Vnis - 0, f -- l 0 kHz) Reverse Transfer Capacitanr.e (VDS = ''5 Vdc, VQ2S " 4.0 Vdc, Ip - 10 mAdc, f - 1,0 MHjl IVfsl C,,s n 0.005 0.05 mrnhos pF NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors
ELECTRICAL CHARACTERISTICS Iconlinuedl ITA =. 25'C unleis mrmwii* notud.l Chncurtetic | Symbol | FUNCTIONAL CHARACTERISTICS Noise figure Won - is v<fc, VGG - ?o Vdc. ( = 200 MHZ) {Figure i> MFEZH (Vpp * 24 Vdc. VGQ - 6.0 Vdc. f - 45 MHz) (Figure 2) MFE212 Common Source Power Gam |VDD - 18 Vdc. VGG - ™ vdc, f - 20° MHl> (f'tgun 11 MFE211 (VDD - 18 Vac, VGG " 6-° vdc- < • 45 MHzl (Figure 31 MFE211 (VfjD = 18 Vdc, fL0 = MS MHi. fHF = 200 MHz) (Figure 3) MFE212 Bandwidth (VDD = is vdc. VGG • 7 o vdc, f = 200 MHZ) ingu« n MFEZII (VDD - 18 Vdc, ILO • Z«S MHz, fnF • ZOO MHz) (Figure 31 MFE212 (VDD = 18 Vdc, VGG - 6.0 Vdc, f - 45MHz) (Figure 2) MFE211 Gain Control Gete-Supply Voltage(4) (VDD - 18 Vdc. AGp, - -30 dB. f - 200 MHz) (Figure 1) MFE211 (Vrjp = 18 Vdc, AGpS " -30 dB. ( - 45 MHz) (Figure 21 MFE211 MF eps GCIS) BW vGelec) E.O 4.0 3.5 3.5 4.0 7.0 6.0 -20 ±1.0 dB dB MHz Vdc 1. All gain breakdown voltages are meaiured while the device is conducting rated gate currant. This ensures that the gate-voltage limiting network is functioning properly. • 2. Pulse Test: Pulse Width - 300 us. Duty Cycle -~ 2.0%. 3. Tnis parameter must be menourad with bias voltages applied for IBS* ttum 5 seconds to avoid overheating. The signal is applied ID gate I with gate 2 a BC ground. 4 AGps is defined as the change in Gps from the vetLe 3! VQG " 7'C v°Ks (MFE217), 5, POWQI Gain Conversion, Amplitude at input from local oscillator is adjusted for maximum Gc, 470 pf t- 1 470 pF 1 1 JZ.ZMH 0 001 j»F L-b^h^r-^f—f-lr -li^h^i k Town LOAD Cl. C2 & C3: Leadless disc ceramic, 0.001 C4: ARCO 462. 5-BO pF. or equivalent L1: 3 Turns #1B, 3/16" diameter aluminum slug L2: 8 Turns #20, 3'16" diameter aluminum slug 1. ZOO MHz Power Gain, Gain Control Voltage, and Noise Figure Test Circuit for MFE211 VGG Cl: Leadless disc ceramic, O.ODl ^f C2: Leadless disc ceramic, 0.01 /iF L1: 8 Turns i?28, 5/32" diameter form, type "J" slug L2. 9 Turns #28, S/32" diameter form, type "J" slug