MFE209 NJSEMI | Alldatasheet
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O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS MFE209 N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 Rating Drain-Source Voltage Drain. Gate Voltage Gate Current Drain Current — Continuoui Total Power Dissipation fe TA = 26'C Derate above 25°C Storage Channel Temperature Range Operating Channel Temperature Lead Temperature, 1/16* From Seated Surface for 10 Seconds Symbol VDSX VDGI VDG2 IGIR IGIF IQ2R 'G2F ID PD TSIB Tchannel TL Value -10 300 1.71 -65to +200 200 260 Unit Vdc Vdc mAdc mAdc mW mW-'C TO-72 ELECTRICAL CHARACTERISTICS <TA = 2S'C unlns otherwise noted.) Characterise Symbol Mfn OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Id = 10 /iAdc, VGIS - ~4-° Vdc, VQ2S = 4-0 Vdc) Gate 1 — Source Breakdown Voltage IIQ1 - 10 mAdc, VQ2S - VDS = °> Gate 1 — Source Reverse Breakdown Voltage HGI - -10 mAdc, VQ2S • VDS • o) Gate 2 -~ Source Forward Breakdown Voltage (|Q2 f' 10 mAdc, VQIS " VDS - 0) Gate 2 — Source Reverie Breakdown Voltage (|Q2 - -10 mAdc, VQIS - VDS • 0) Gate 1 — Source Cutoff Voltage (VDS • "> Vdc, VQ2S * *-° Vdc, ID " 50 nAdc) Gate 2 — Source Cutoff Voltage (vDs • 15 vdc, VQIS • o, i0 - so ^Adc) Gate 1 — Terminal Forward Current (VQJS .. 6.0 vdc, vG2s - VDS =• 01 Gate 1 — Terminal Reverse Current (VGIS - '-16.0 vdc, VQ2S f VDS • o) (VGIS - -fl.o-vdc, yeas • VDS - o, TA - iwo Gate 2 — Terminal Forward Current (vG2S'- 6.0 vdc, VGIS - VDS - 01 Gate 2 — Terminal Reverse Current (VQ2S •« -6.0 vdc, VGIS - VDS - 01 (vG2S = -6.0 Vdc, VGIS • VDS * o. TA » iso-ci V(BR)DSX VIBRIGISSF VIBRIGISSR V(BRIG2SSF V(BR)G2SSR VGIS(off) VG2S(oH) 'G1SSF 'G1SSR 'G2SSF IQ2SSR 7,0 -7.0 7.0 -7.0 0 1
- 0.1 I- n — "Yo 'n 1 0 -20 -10
- •20 -10 Vdc Vdc Vdc Vdc Vdc i vdc nAdc nAdc MAdc nAdc nAdc MAdc Typ ON CHARACTERISTICS Gate 1 — Zero Voltage Drain Current (VDS • IS Vdc, V(jis - 0, VQ2S • *-0 Voo) IDSS 5.0 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admit' WDS 1& Vdc, V^2S Input Capacitance (Vos « i&V*- '^lkj.. Reverse Transfer Cao<*C' IVDS -5 vdc v,,^, Output Capacirance (VDS = 15 Vdc, VG2s Common-Source Noise (VDS = isvdc, vG2S Common-Source Power (VDS = iavdc, vG2S Bandwidth (VDS - ^ vdc, VQ2s iiru.r 4 o vdc, ID JO Vrtr. ID j u vdc. ID - 4 o vdc. ID ~ igure (FtQufe 1 1 ' 4 o vdc. ID ••= Ga«> (Figure 11)
40 Vdc, ID '
10 mAdc. f -
- iOmArtc > 5 0 mAdc f 5.0 mAdc. f 10 mAdc, f - 10 mAdc, f * 10 mAdc. f = 10 kHz)
1.0 MHz)
1,0MHz)
500 MHz)
500MHz) 500MHz) iVfs r c,sb c,ss COSs NF Gps BW 0,005 7.0 0023 45 t — 1 > H I 0 03 i pF pF dB dB MHz i: MilMK AND NOTES ASSOCMEO WITH TOH AtJBK Quality Semi-Condoctors