MFE201 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate Current Drain Current — Continuous Total Power Dissipation (a TA » 25°C Derate above 25°C Total Power Dissipation & TC = 25°C Derate above 25°C Storage Channel Temperature Range Junction Temperature Range Lead Temperature, 1/16" From Seated Surface for 10 Seconds Symbol VDSX VDGI VDG2 IGI 'G2 ID PD PD Tstq Tj TL Value ±10 ±10 SO 360 2.4 1.2 8.0 -65to -t-200 -65 to +175 300 Unit Vdc Vdc mAdc mAdc mW mWC Wan mVWC TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960 MFE201 thru MFE203 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Mln Typ Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID = 10 ,iAdc. VS = 0. VQ1S = VQ2S = -5-0 Vdc) Gate 1 — Source Breakdown Voltage! 1) (IQ1 = =10 mAdc. V<32S = VDS * °> Gate 2 — Source Breakdown Voltage! 11 (|Q2 = ±10 mAdc. VQIS = VDS = 0) Gate 1 to Source Cutoff Voltage (VDs - 15 Vdc. VQ2S - ".0 Vdc, ID = 20 «Adc) Gate 2 to Source Cutoff Voltage (VDS • 15 Vdc, VQIS - o, ID - 20 /iAde) Gate 1 Leakage Current (VGIS = ±5.0 vdc, VQ2S = VDS = o> <VG2S - -5.0 Vdc. VQ2S = VDS = 0. TA - 150°C) Gate 2 Leakage Current <vG2s = =5.0 vdc, VGIS = VDS = o) (vG2s - -5.0 vde. VGIS = VDS = o. TA = iso-a V<BR)OSX .VIBRIGISO V(BR)G2SO VQ1S(off) VG2S(off) 'GISS "G2SS ±6.0 ±6.0 -0.5 -0.2 ±12 ±12 -1.5 -1.4 ±0.04 ±0.05 ±30 ±30 -5.0 -5.0 ±10 -10 ±10 -10 Vdc Vdc Vdc Vdc Vdc nAdc MAdc nAdc MAdc ON CHARACTERISTICS Zero-Gate Voltage Drain Current(2) (Vos - 15 Vdc. VQIS - 0, VQ2S - 4-° Vdcl MFE201. MFE202 MFE203 'DSS 6.8 3.0 IS mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Adminance(3) (V0S = IS Vdc. VQ2S = 4-0 Vdc, VGIS - 0, f - 1.0 *Hz> MFE201, MFE202 MFE203 Input Capacitance (VDS = 15 Vdc, VQ2S - 4-0 Vdc, ID = 'OSS- f = 1.0 MHzl Output Capacitance (VDS - '5 vdc, VQ2S = 4-0 vde. ID - IDSS- f - 1.0 MHZ) Reverse Transfer Capacitance IVos = 15 Vdc. VQ2S = 4-0 Vdc. ID = 10 mAdc. f = 1.0 MHz) IVfsl Ciss ^oss Crss 8J) 7.0 0.005 12.8 12.S 4.3 1.7 0.014 0.03 mmhos PF PF PF Qualitv Semi-Conductors DM t MUMETOS MM 5.31 1 : 4.52 C 432 041 MM MCNES MM 594 0209 495 1 0178 533 0.170 0.53 - 1 0.7« F 1 0.41 G H 041
2.54 BSC
K 12.70 t ; 6,35 i 117 0.016 0.016 MAX 0.230 0.195 0210 J 0.021 J 0.030 j 0.019
0.100 BSC
0.036 1.22 0.028 0.046 0.048 0500 j — 0.250 M i 45'BSC : 45-BSC j N 127 BSC ' 0.050 BSC t - 127 0050