MF365A-J8CATXX

MF365A-J8CATXX MITSUBISHI | Alldatasheet

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1 /16 Apr. 1999 Rev. 1.2 8/16-bit Data Bus Static RAM Card Connector Type Two- piece 68-pin 1. DESCRIPTION Mitsubishi’s Static RAM cards provide large memory capacities on a device approximately the size of a credit card (85.6mm × 54mm × 3.3mm). The cards use a 8/16 bit data-bus. Available in 64KB, 128KB, 256KB, 512KB,

1 MB, 2 MB and 4 MB capacities, Mitsubishi’s

SRAM cards conform to the PC Card Standard. Mitsubishi achieved high density memory, while maintaining credit size by using a thin small outline packaging technology (TSOP). The TSOP surpasses conventional memory card chip-on-board packaging technology where larger, surface-mount devices result in a tradeoff between card size and optimum memory density. The TSOP, with external leads spaced on 20-mil centers, is over four times smaller than standard equivalent pin count surface-mount packages. This allows up to 8 memory ICs (plus interface circuitry) to be mounted in a card that in only 3.3mm thick. MF365A-J8CATXX MF3129-J8CATXX MF3257-J8CATXX MF3513-J8CATXX MF31M1-J8CATXX MF32M1-J8CATXX MF34M1-J8CATXX 2. FEATURES nUses TSOP (Thin Small Outline Package) to achieve very high memory density coupled with high reliability, without enlarging card size nOne to 8 memory ICs can be mounted in a card that is only 3.3mm thick nElectrostatic discharge protection to 15kV nBuffered interface nWrite protect switch nAttribute memory n68pin nBuilt-in auxiliary battery 3. APPLICATIONS nOffice automation nData Communication nComputers nIndustrial nTelecommunications nConsumer 4. PRODUCT LIST Item Memory Data Bus Attribute Auxiliary Type name capacity width(bits) memory battery MF365A-J8CATXX 64KB MF3129-J8CATXX 128KB MF3257-J8CATXX 256KB MF3513-J8CATXX 512KB 8/16 8KB YES MF31M1-J8CATXX 1MB E 2 PROM MF32M1-J8CATXX 2MB MF34M1-J8CATXX 4MB

2 /16 Apr. 1999 Rev. 1.2 5. SUMMARY MF3XXX-J8CATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width. The card has a replaceable lithium main battery to maintain data in memory and has an auxiliary battery to maintain data in memory while the main battery is replaced. When the card is not use or the supply voltage drops, the main battery will automatically maintain data in memory. 6. FUNCTIONAL DESCRIPTION The function of the card is determined by the combination of the following five control signals, REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5 ) ((1))COMMON MEMORY FUNCTION When REG# signal is high level, the common memory area is selected. ((a))READ MODE To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs A0-A21 (4MB ). Setting OE# low level executes the reading with output at data-bus. It is available to make the following functions according to the combination of CE1# and CE2#. When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card. The data can be dealt with lower data-bus (D0-D7 ). When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card. At this mode LSB of address-bus (A0 ) is ignored. In addition odd byte can be accessed through upper data-bus (D8-D15 ) when CE1# is set high level and CE2# is set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is ignored ). When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same as in the following modes ). When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is placed in high impedance state. ((b))WRITE MODE To write, the memory address is first applied at inputs A0-A21 (4MB ) and the data is applied at output pins. Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing. ((2))ATTRIBUTE MEMORY FUNCTION When REG# is set low level, the attribute memory area is selected. MF3XXX-J8CATXX series accommodates an attribute memory of 8KB E 2 PROM on even addresses. ((a))READ MODE First set CE1# and CE2# low level or high level and select residing address (even address ). Data can be read by setting OE# low level and WE# high level. ((b))WRITE MODE Writing can be done either by byte-mode or page-mode. The page-mode write is the function to be able to write data of 32 bytes in a single write cycle. The page address is set by A6 to A13 (Please note that attribute memory exists in even bytes only ). To write, set OE# high level and WE# low level. Data will be latched at the rising edge of WE#. After the first load unless WE# changes from high level to low level within 30 µs, the automatic erase/program starts and completes in 10ms or before. Page data can be latched if WE# transits from high level to low level before the 30 µs. Page-mode write also executes erase/program operation within 10ms. The page address must be maintained during the page data loading. ((3))BATTERY When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is encountered, replace any exhausted battery with a new one as directed in section 21.2 ″REPLACING BATTERY ″ (page 14 ). The replacement battery model number is indicated under section 21 ″BATTERY SPECIFICATIONS ″(page 14 ). 7. WRITE PROTECT MODE When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, WP pin becomes “H” level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates “L” level).

3 /16 Apr. 1999 Rev. 1.2 8. PIN ASSIGNMENTS Pin Pin No. No.

1 GND Ground 35 GND Ground

2 D3 36 CD1# Card detect 1

3 D4 37 D11

4 D5 Data I/O 38 D12

5 D6 39 D13 Data I/O

6 D7 40 D14

7 CE1# Card enable 1 41 D15

8 A10 Address input 42 CE2# Card enable 2

9 OE# Output enable 43 NC

10 A11 44 NC No connection

11 A9 45 NC

12 A8 Address input 46 A17 A17 (NC for < 128KB types)

13 A13 47 A18 A18 (NC for < 256KB types)

14 A14 48 A19 A19 (NC for < 512KB types) Address

15 WE# Write enable 49 A20 A20 (NC for < 1MB type) input

16 NC No connection 50 A21 A21 (NC for < 2MB type)

17 VCC Power supply voltage 51 VCC Power supply voltage

18 NC No connection 52 NC

19 A16 A16 (NC for 64KB type) 53 NC

20 A15 54 NC

21 A12 55 NC

22 A7 56 NC No connection

23 A6 57 NC

24 A5 Address input 58 NC

25 A4 59 NC

26 A3 60 NC

27 A2 61 REG# Attribute memory select

28 A1 62 BVD2 Battery voltage detect 2

29 A0 63 BVD1 Battery voltage detect 1

30 D0 64 D8

31 D1 Data I/O 65 D9 Data I/O

32 D2 66 D10

33 WP Write protect 67 CD2# Card detect 2

34 GND Ground 68 GND Ground

SymbolSymbol FunctionFunction

4 /16 Apr. 1999 Rev. 1.2 9. BLOCK DIAGRAM (4MB) (MF34M1-J8CATXX) D15 D14 D13 D12 D11 D10 A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 BVD2 BVD1 WE# OE# CE1# CE2# REG# WP# WRITE PROTECT ON OFF CD1# CD2# V CC VOLTAGE DETECTOR POWER CONTROLLER ATTRIBUTE MEMORY 64Kbit E 2 PROM × 1MODE CONTROL LOGIC ADDRESS- BUS BUFFERS ADDRESS- DECODER COMMON MEMORY 4Mbit SRAM × 8 CS# DATA-BUS BUFFERS GND OE# WE# OE# WE# CS# 8 TO INTERNAL POWER SUPPLY CR2025 Auxiliary battery

5 /16 Apr. 1999 Rev. 1.2 10. FUNCTION TABLE Mode REG# CE1# CE2# OE# WE# A0 I/O (D15~D8) I/O (D7~D0) Icc Standby X H H X X X High-impedance High-impedance standby Read A (16bit) common H L L L H X Odd Byte Data out Even Byte Data out Active Write A (16bit) common H L L H L X Odd Byte Data in Even Byte Data in Active Read B (8bit ) common H L H L H L High-impedance Even Byte Data out Active H L H L H H High-impedance Odd Byte Data out Active Write B (8bit ) H L H H L L High-impedance Even Byte Data in Active common H L H H L H High-impedance Odd Byte Data in Active Read C (8bit) common H H L L H X Odd Byte Data out High-impedance Active Write C (8bit) common H H L H L X Odd Byte Data in High-impedance Active Output disable X X X H H X High-impedance High-impedance Active Read A (16bit) attribute L L L L H X Data out (unknown) Even Byte Data out Active Read B (8bit ) attribute L L H L H L High-impedance Even Byte Data out Active L L H L H H High-impedance Data out (unknown) Active Read C (8bit) attribute L H L L H X Data out (unknown) High-impedance Active Write A (16bit) attribute L L L H L X don’t care Even Byte Data in Active Write B (8bit ) L L H H L L don’t care Even Byte Data in Active attribute L L H H L H don’t care don’t care Active Write C (8bit) attribute L H L H L X don’t care don’t care Active Note 1 : H=V IH , L=V IL, X=V IH or V IL 11. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Ratings Unit Vcc Supply voltage -0.3~6.0 V V I Input voltage With respect to GND -0.3~VCC+0.3 V V O Output voltage 0~VCC V Topr1 Operating temperature 1 Read, Write Operation 0~60 °C Topr2 Operating temperature 2 Data retention 0~60 °C Tstg Storage temperature Excludes data retention -20~70 °C 12. RECOMMENDED OPERATING CONDITIONS (Ta=0~55°C, unless otherwise noted) Limits Min. Typ. Max. Vcc Vcc Supply voltage 4.75 5.0 5.25 V GND System ground 0 V V IH High input voltage 2.4 VCC V V IL Low input voltage 0 0.8 V Symbol Parameter Unit

6 /16 Apr. 1999 Rev. 1.2 13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. V OH High output voltage I OH = -1.0mA 2.4 V V OL Low output voltage I OL =2mA 0.4 V I IH High input current V I =Vcc V 10 µA I IL Low input current V I =0V CE1#, CE2#, WE#, OE#, REG# -10 -70 µA Other inputs -10 I OZH High output current CE1#=CE2#=V IH or OE#=V IH WE#=V IH , 10 µA in off state V O =Vcc I OZL Low output current CE1#=CE2#=V IH or OE#=V IH WE#=V IH , -10 µA in off state V O =0V Icc 1 • 1 Active supply CE1#=CE2#=V IL , other inputs 64KB~512KB 170 mA current 1 =V IH or V IL ,Outputs=open 1MB~4MB 230 Icc 1 • 2 Active supply current 2 CE1#=CE2# ≤ 0.2V, other inputs ≤ 0.2V or 64KB~512KB 160 mA ≥ Vcc-0.2V, Outputs=open 1MB~4MB 220 Icc 2 • 1 Standby supply CE1#=CE2#=V IH 64KB~4MB 10 mA current 1 other inputs=V IH or V IL (17) Icc 2 • 2 Standby supply current 2 CE1#=CE2# ≥ Vcc-0.2V other inputs ≤ 0.2V or 64KB~512KB 0.45 (7.45) mA ≥ Vcc-0.2V 1MB~4MB 0.65 (7.65) VBDET1 Battery detect Vcc=5V, Ta=25°C 2.27 2.37 2.47 V reference voltage VBDET2 Battery detect Vcc=5V, Ta=25°C 2.55 2.65 2.75 V reference voltage Note 2 : Currents flowing into the card are taken as positive (unsigned). 3 : Typical values are measured at Vcc=5V, Ta=25°C. 4 : The figure in the parentheses indicates the standby current limits when the built-in auxiliary battery is not fully charged. 14. CAPACITANCE Limits Min. Typ. Max. C I Input capacitance V I =GND, v i=25mVrms f=1MH Z , Ta=25°C 30 pF C O Output Capacitance Vo =GND, vo =25mVrms f =1MHz, Ta=25°C 20 pF Note 5 : These parameters are not 100% tested. Symbol UnitParameter Test conditions

7 /16 Apr. 1999 Rev. 1.2 15. SWITCHING CHARACTERISTICS Read Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted) Symbol Parameter Limits Unit Min. Max. tcR Read cycle time 150 ns ta (A) Address access time 150 ns ta (CE) Card enable access time 150 ns ta (OE) Output enable access time 75 ns tdis (CE) Output disable time (from CE#) 75 ns tdis (OE) Output disable time (from OE#) 75 ns ten (CE) Output enable time (from CE#) 5 ns ten (OE) Output enable time (from OE#) 5 ns tV (A) Data valid time (after address change) 0 ns 16. TIMING REQUIREMENTS Write Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted) Symbol Parameter Limits Unit Min. Max. tcW Write cycle time 150 ns tw(WE) Write pulse width 80 ns tsu(A) Address set up time 20 ns tsu(A-WEH) Address set up time with respect to WE# high 100 ns tsu(CE-WEH) Card enable set up time with respect to WE# high 100 ns t(D-WEH) Data set up time with respect to WE# high 50 ns th(D) Data hold time 20 ns trec(WE) Write recovery time 20 ns tdis(WE) Output disable time (from WE#) 75 ns tdis(OE) Output disable time (from OE#) 75 ns ten(WE) Output enable time (from WE#) 5 ns ten(OE) Output enable time (from OE#) 5 ns tsu(OE-WE) OE# set up time with respect to WE# low 10 ns th(OE-WE) OE# hold time with respect to WE# high 10 ns

8 /16 Apr. 1999 Rev. 1.2 TIMING DIAGRAM Read Cycle WE#=“H” level REG#=“H” level Write Cycle (WE# control) REG#=“H” level Dm (D OUT ) V OH V OL Hi-Z ten (OE) tC W tSU (CE-WEH) tSU (A-WEH) tSU (A) th(OE-WE) V IH V IL An tW (WE) tSU (OE-WE) CE# V IH V IL tdis(OE) tdis (WE) Dm (D IN ) V IH V IL V IL WE# V IH OE# V IH V IL trec(WE) th (D)t(D-WEH) ten (WE) DATA INPUT STABLEHi-Z tcR ta (A) ta(CE) ten(CE) ten(OE) tdis(OE) tV (A) OUTPUT VALID Hi-Z tdis (CE) An V IH Dm (D OUT ) V OH V OL CE# V IH V IL V IL ta(OE) OE# V IH V IL

9 /16 Apr. 1999 Rev. 1.2 Write Cycle (CE# control) OE#=“H” level REG#=“H” level 17. SWITCHING CHARACTERISTICS (Attribute) Read Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted) Symbol Parameter Limits Unit Min. Max. tcRR Read cycle time 300 ns ta(A)R Address access time 300 ns ta(CE)R Card enable access time 300 ns ta(OE)R Output enable access time 150 ns tdis(CE)R Output disable time (from CE#) 100 ns tdis(OE)R Output disable time (from OE#) 100 ns ten(CE)R Output enable time (from CE#) 5 ns ten(OE)R Output enable time (from OE#) 5 ns tV(A)R Data valid time after address change 0 ns tC W tSU (CE-WEH) V IH V IL An CE# V IH V IL Dm (D IN ) V IH V IL V IL WE# V IH tSU (A) trec (WE) th (D)t(D-WEH) DATA INPUT STABLEHi-Z

10 /16 Apr. 1999 Rev. 1.2 18. TIMING REQUIREMENTS (Attribute) Write Cycle (Ta=0 ∼55 °C, Vcc=5V ±5%, unless otherwise noted) Symbol Parameter Limits Unit Min. Max. tsu (A )R Address setup time 30 ns tsu (CE )R CE# setup time 40 ns th (CE )R CE# hold time 30 ns t(D-WEH )R Data setup time 120 ns th (D )R Data hold time 40 ns tsu (OE-WE )R OE# setup time 30 ns th (OE-WE )R OE# hold time 40 ns tw (WE )R Write pulse width 170 ns tDL R Data latch time 120 ns tBLC R Byte load cycle time 0.3 30 µs tcWR Write cycle time 10 ms ten(OE)R Output enable time from OE# 5 ns trec (WE )R Write recovery time 30 ns TIMING DIAGRAM (Attribute) Read Cycle WE#=“H” level REG#=“L” level tcRR ta (A )R ta (CE )R ten(CE)R ten(OE)R tdis(OE)R tV (A )R ta(OE)R OUTPUT VALID Hi-Z tdis (CE)R An V IH Dm (D OUT ) V OH V OL OE# V IH V IL CE# V IH V IL V IL

11 /16 Apr. 1999 Rev. 1.2 BYTE WRITE TIMING CHART REG#=“L” level D OUT V OH V OL Hi-Z ten(OE)R trec (WE )R th (CE )R tw (WE )Rtsu (A )R V IH V IL An tsu (CE )R th (OE-WE )R CE# V IH V IL tdis (OE )R t(D-WEH )R D IN V IH V IL V IL WE# V IH OE# V IH V IL tsu (OE-WE )R th (D )R Hi-Z tc WR

12 /16 Apr. 1999 Rev. 1.2 PAGE MODE WRITE TIMING CHART REG#=“L” level Note 6 : Test Conditions Input pulse levels : V IL =0.4V, V IH =2.8V Input pulse rise, fall time : tr=tf=10ns Reference voltage Input : V IL =0.8V, V IH =2.4V Output : V OL =0.8V, V OH =2.0V (ten and tdis are measured when output voltage is ± 500mV from steady state. ) Load : 100pF + 1 TTL gate 5pF + 1 TTL gate (at ten and tdis measuring) 7 : Indicates the don’t care input 8 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory) 9 : Don’t apply inverted phase signal externally when Dm pin is in output mode. 10 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Write B : CE#=CE1#, CE2#=“H” level Read C/Write C : CE#=CE2#, CE1#=“H” level tdis (OE )R Hi-Z An=(n>5) An (A 0 ~A 5 ) CE# OE# WE# D IN tw (WE )R tDL R tsu (OE-WE )R tsu (A )R tBLC R th (CE )R trec (WE )R tsu (CE )R t(D-WEH )R th (D )R 0h 2h 4h 3Ch 3Eh D OUT Hi-Z th (OE-WE )R tc WR

13 /16 Apr. 1999 Rev. 1.2 19. ELECTRICAL CHARACTERISTICS BATTERY BACKUP (Ta=0~55°C, unless otherwise noted) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. V BATT Back-up enable battery voltage All pins open 2.6 V Vi (CE ) Card enable voltage 2.4V ≤VCC ≤5.25V 2.4 V 0V ≤VCC <2.4V Vcc-0.1 Vcc Vcc+0.1 64KB 3 128KB 3 All pins open, 256KB 3 Battery back-up supply current V BATT =3V, 512KB 5 µA Ta=25°C 1MB 3 2MB 5 Icc 4MB 9 (Bup ) 64KB 30 128KB 30 All pins open, 256KB 30 Battery back-up supply current V BATT =3V 512KB 50 µA 1MB 30 2MB 50 4MB 90 20. TIMING REQUIREMENTS (Ta=0~55°C, unless otherwise noted) Symbol Parameter Limits Unit Min. Typ. Max. tpr Power supply rise time 0.1 300 ms tpf Power supply fall time 3 300 ms tsu(Vcc) Setup time at power on 20 ms trec(Vcc) Recovery time at power off 1000 ns CARD INSERTION/REMOVAL TIMING DIAGRAM 21. BATTERY SPECIFICATIONS Please use the following coin type lithium battery. Type of main battery; CR2025 or equivalents

21.1 BATTERY LIFE EXPECTANCY

The calculated main battery’s life expectancies are as follows. Card Type main battery’s life (when the card is left continuously ) MF365A-J8CATXX 5.9years MF3129-J8CATXX 5.9years MF3257-J8CATXX 5.9years MF3513-J8CATXX 3.6years MF31M1-J8CATXX 5.9years MF32M1-J8CATXX 3.6years MF34M1-J8CATXX 2.0years Conditions; Temperature : 25°C Humidity : 60%RH V CC CE1#, CE2# trec(V CC ) tpf 90% V IH 10% V CC CE1#, CE2# tsu(V CC ) tpr 90% V IH 10% V CC MIN V CC MIN

14 /16 Apr. 1999 Rev. 1.2

21.2 REPLACING BATTERY

MF3XXX-J8CATXX series have two batteries inside the card as follows. Lithium battery; for main battery (replaceable ) Rechargeable battery; for auxiliary battery (not replaceable ) For main battery replacement, perform the following procedure. Performing any other procedures will lose the data recorded in the IC card. (1 )Have on hand a new main battery that has the same model number as or is equivalent currently installed one. (2 )Insert the IC card into the system and apply power to the IC card so that the auxiliary battery will be charged. (more than 5 minutes ) (3 )While pressing the main battery holder cam release levers inward, slowly withdraw the main battery holder. (4 )With the new main battery set in the battery holder, insert it completely into the IC card. (5 )If the battery holder is incorrectly oriented, it will not smoothly fit into its position or the IC card will bulge. If such a situation is encountered, properly reorient the battery and battery holder and try again. (6 )Insert the battery holder until it clicks into position. <NOTICE> Main battery replacement must be completed quickly (recommended time is within 10 minutes ). If too much time is taken, the recorded data may be lost. The built-in auxiliary battery cannot be replaced. 22. CONNECTOR The number of card insertion and removal are as follows. Office environment 10000 times min. at speed of 10 cycles/min. Harsh environment 5000 times min. at speed of 10 cycles/min. 23. CARD WEIGHT about 35g 24. UL CLASS OF MAIN CARD PARTS (1 )MAIN FRAME UL94V-0 (2 )PCB UL94V-0 (3 )PLASTIC PART OF CONNECTOR UL94V-0 25. THE BATTERY VOLTAGE DETECT SIGNALS ((BVD1,2)) BVD1 BVD2 Comment H H Battery operational H L Battery operational, but battery should be replaced L L Battery and data integrity is not kept Note11. The battery voltage detect signals indicate the present state of the battery. They do not guarantee the data retention. 26.CONCERNING THE SECURITY OF DATA There is always the possibility that a soft-error (this malfunction is not permanent hence it is called soft and the data can be restored by rewriting) may occur with semiconductor products. When keeping the important data within an IC card, remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) Keeping multiple copies of the data. (2) Addition of ECC or CRC by software or hardware.

15 /16 Apr. 1999 Rev. 1.2 ! Warning ( if card with battery / card with auxiliary battery ) (1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat, rupture or explode. (2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor immediately. (3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or leak electrolyte solution. ! Caution This product is not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of non-flammable material or (3)prevention against any malfunction or mishap. Notes regarding these materials lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third- party’s rights, originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. l All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use. After reading please store the manual in s safe place for future reference. l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. l If these products or technologies are subject the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.

16/16 Apr.1999 Rev.1.2 OUTLINE(68P-012)