MEP4435Q8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A
  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free package Equivalent Circuit Outline MEP4435Q8 S：Source D：Drain G：Gate SOP-8

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 2/7 MEP4435Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -30 V Gate-Source V oltage VGS ±25 V Continuous Drain Current @TA=25 °C ID -10 A Continuous Drain Current @TA=100 °C ID -8 A Pulsed Drain Current (Note 1) IDM -40 A Pd 2.5 W Total Power Dissipation @ TA=25 °C (Note 2) Linear Derating Factor 0.02 W / °C Operating Junction Temperature Tj -55~+150 °C Storage Temperature Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 2) Rth,j-a 50 °C/W Note : 1.Pulse width limited by maximum junction temperature. 2. Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA ΔVDSS/ΔTj - -0.037 - V/°C Reference to 25°C, ID=-1mA VGS(th) -1 - -3 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±25V , VDS=0 IDSS - - -1 μA VDS=-24V , VGS=0 IDSS - - -10 μA VDS=-20V , VGS=0, Tj=125°C ID(ON) 40 - - A VDS=-5V , VGS=-10V - 15 20 ID=-10A, VGS=-10V *RDS(ON) - 25 35 mΩ ID=-7A, VGS=-5V *GFS - 24 - S VDS=-5V , ID=-10A Dynamic Ciss - 2815 - Coss - 1060 - Crss - 955 - pF VDS=-15V , VGS=0, f=1MHz td(ON) - 12 - tr - 10 - td(OFF) - 35 - tf - 7 - ns VDD=-15V , ID=-1A, VGS=-10V , RG=2.7Ω Qg - 25 - Qgs - 7 - Qgd - 9 - nC VDS=-15V , ID=-10A, VGS=-10V , Rg - 4 - Ω VGS=15mV , VDS=0, f=1MHz

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 3/7 MEP4435Q8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode IS - - -3 VD=VG=0, VS=-1.2V ISM - - -12 A VGS=0V , ISD=-2.1A *VSD - - -1.3 V IF=IS, VGS=0V *trr - 32 - ns *Qrr - 26 - nC IF=IS, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 4/7 MEP4435Q8 CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 5/7 MEP4435Q8 CYStek Product Specification Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 6/7 MEP4435Q8 CYStek Product Specification Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 7/7 MEP4435Q8 CYStek Product Specification SOP-8 Dimension *: Typical Inches Millimeters Inches 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A 4435SC □□□□ Date Code H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Tin plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.