MEN09N03BJ3

MEN09N03BJ3 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

• VDS=30V , ID=50A, RDS(ON)=9mΩ
• Low Gate Charge • Repetitive Avalanche Rated
• Simple Drive Requirement • Fast Switching Characteristic
• RoHS compliant package Symbol Outline MEN09N03BJ3 TO-252 Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 V Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C ID 50 A Continuous Drain Current @ TC=100°C ID 35 A Pulsed Drain Current IDM 140 *1 A Avalanche Current IAS 37.5 A Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25Ω EAS 70 mJ Repetitive Avalanche Energy @ L=0.05mH EAR 15 *2 mJ Power Dissipation (TC=25℃) 60 W Power Dissipation (TC=100℃) PD 32 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle≤1% G：Gate G D S D：Drain S：Source

CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 2/7 MEN09N03BJ3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.5 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 75 °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA VGS(th) 1.0 1.7 3.0 V VDS = VGS, ID=250μA GFS - 20 - S VDS =5V , ID=20A IGSS - - ±100 nA VGS=±20 - - 1 VDS =24V , VGS =0 IDSS - - 25 μA VDS =20V , VGS =0, Tj=125°C ID(ON) 50 - - A VGS =10V , VDS=10V - 7.5 9 VGS =10V , ID=25A *RDS(ON) - 12 15 mΩ VGS =5V , ID=20A Dynamic Rg - 1.7 - Ω VGS=15mV , VDS=0, f=1MHz *Qg(VGS=10V) - 23 - *Qg(VGS=5V) - 13 - *Qgs - 4.7 - *Qgd - 7.4 - nC ID=25A, VDS=15V , VGS=10V *td(ON) - 10 - *tr - 8 - *td(OFF) - 30 - *tf - 5 - ns VDS=15V , ID=25A, VGS=10V , RG=2.7Ω, RD=0.6Ω Ciss - 2020 - Coss - 275 - Crss - 160 - pF VGS=0V , VDS=15V , f=1MHz Source-Drain Diode *IS - - 50 *ISM - - 140 A *VSD - - 1.3 V IF=IS, VGS=0 *trr - 22 - ns *IRM(REC) - 180 - A *Qrr - 12 - nC IF=IS, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MEN09N03BJ3 TO-252 (RoHS compliant) 2500 pcs / Tape & Reel 09N03

CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 3/7 MEN09N03BJ3 Characteristic Curves CYStek Product Specification V V ) ,DR AIN- SOURCE VOLTAGE ( ON-REGION CHARACTERISTIC I , DRAI N - SOURCE CURRENT( A ) 0.5 1.512 10V 100 2.5 3 3.5 4 3.5V V = 3.0VGS 4.5 5 4.5V DS D I ,DR AIN C UR R E NT( A ) N- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGEO R ,NOR MALIZED DR AIN - S OUR C E ON - R E S IS TANC E 0.5 DS(ON) 1.5 D GSV = 3.5V 2.5 60 80 100 10V 5.5V 4.5V O - RE A I O PN SI STANCE VARI T N WI TH TEM ERATURE R ,NORMALIZED DRAI N - SOURCE ON - RESI STAN CE 0.6 -50 DS(ON) 0.8 1.0 j -25 0 25 V = 10V 1.4 1.2 1.6 1.8 GS D 150100 75 125 175 JUNCTION TEMPERATURE(° ) I = 25A T , C ON-RESISTANCE VARIATION WITH GATE-TO-SOURCE VOLTAGE ,GATE TO SOURCE VOLTAGE V R ,ON-RES IS TANC E(OHM) DS(ON) 0.010 0.015 GS I = 25AD 0.020 0.025 0.030 T = 125 C T = 25 CA A ON-REGION CHARACTERISTIC ON-RESISTANCE V ARIATION WITH TEMPERATURE RDS(ON), NORMALIZED DRAIN- SOURCE ON-RESISTANCE ON-RESISTANCE V ARIATION WITH DRAIN CURRENT AND GATE VOLTAGE ON-RESISTANCE V ARIATION WITH GATE TO SOURCE VOLTAGE VDS, DRAIN-SOURCE VOLTAGE(V) ID, DRAIN CURRENT(A) ID, DRAIN-SOURCE CURRENT(A) RDS(ON), ON-RESISTANCE(OHM) RDS(ON), NORMALIZED DRAIN- SOURCE ON-RESISTANCE ,GATE TO SOURCE VOLTAGEV I ,DR AIN C UR R E NT( A ) D GS DSV = 10V 34 5 RANSFER CHARACTERISTICST 125 ° C 25 ° C T = -55 ° CA VGS, GATE TO SOURCE VOLTAGE(V) TRANSFER CHARACTERISTICS VDS=10V TJ, JUNCTION TEMPERATURE(℃) BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEM PERATURE ,BODY DIODE FORWARD VOLTAGE( V ) 0.8 BODY DIODE FORWARD VOLTAGE V ARIATION WITH SOURCE CURRENT AND TEMPERATURE VGS, GATE TO SOURCE VOLTAGE(V) V I ,R E VE R S E DR AIN C UR R E NT( A ) 0.0001 S 0.001 0.01 0.2 S D 0.4 0.6 V = 0V 0.1 GS A 1.41.0 1.2 25° C -55° C T = 125° C IS, REVERSE DRAIN CURRENT(A) VGS=0V ID, DRAIN CURRENT A) VSD, BODY DIODE FORWARD VOLTAGE(V)

CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 4/7 CYStek Product Specification Characteristic Curves(Cont.) MEN09N03BJ3 MAXIMUM S AF E OP E R ATING AR E A I ,DR AIN C UR R E NT( A ) JC c = 25 C = 2.5 C / WINGLE PULSE GS = 10V 0.5 0.5 D θ DS 2 3 R Limit T RS V 100 300 200 ds(on) DC 205 10 5030 100 s 10 s 100ms 10ms 1ms μ μ ,DR AIN- S OUR C E VOLTAG EV SINGLE PULSE TIME (SEC) POWER( W ) 0.010 1000 500 0.1 1 2500 1500 2000 3000 10 100 1000 S ING LE P ULS E MAX IMUM P OWE R DIS S IP ATION SI NGLE PULSE R = 2.5 C / W°JCθ T = 25 CC ° 0.5 0.3 0.2 0.05 0.03 0.02 Not es: C θJC θJC 100 1000 J 101 DM 1.Duty C ycle,D = θJC 3.T - T = P * R (t) 4.R (t)=r(t) * RθJC 0.2 0.05 0.1 0.1 Dut y Cycl e = 0.5 0.01 Si n gl e Pu l se 0.02 0.01 d Effective Transient Thermal Resist ance Transi nt herma esponse Curve T im e (s e c ) r(t),Normalize e T l R t , 2.R =2.5° C / W 01 0 2 0 30 Q g , GATE CHARGE( nC) I D =25A V DS =5V VGS ,GATE-SOURCE VOLTAGE (V) 10V 15V GATE CHARGE CHARACTERI STI CS CAPACI V GS =0 V V DS -DRAIN-to-SOURCE VLTAGE (V) 0 5 10 15 20 25 30 10 2 10 3 10 4 Crss Ciss f = 1 M Hz Co ss TAN CE CH ARACTERISTICS C- CAPACI TANCE ( pCAPACITANCE (pF) GATE CHARGE CHARACTERISTICS CAPACITANCE CHARACTERISTICS VGS, GATE-SOURCE VOLTAGE(V) MAXIMUM SAFE OPERATING AREA TRANSIENT THERMAL RESISTANCE VGS=10V SINGLE PULSE RθJC=25℃/W TC=25℃ POWER(W) SINGLE PULSE TIME(SEC) VDS, DRAIN- SOURCE VOLTAGE(V) SINGLE PULSE MAXIMUM POWER DISSIPATION ID, DRAIN CURRENT(A) r(t), Normalized Effective Transient Thermal Resistance t1, Time(sec)

CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 5/7 MEN09N03BJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 6/7 MEN09N03BJ3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 7/7 MEN09N03BJ3 CYStek Product Specification TO-252 Dimension *: Typical Inches Millimeters Inches Marking: B A C E H I J K D F GL Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Packag CYStek Package Code: J3 09N03 □□□□ e Device Name Date code Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead : KFC; tin plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.