MCT5210 SIEMENS | Alldatasheet
Document overview
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Technical content
FEATURES
- Current Transfer Ratio MCT5210, >70% at I F =3.0 mA MCT5211, >110% at I F =1.0 mA
- Saturation CTR–MCT5211, >100% at I F =1.6 mA
- High Isolation Voltage, 5300 VAC RMS
- Underwriters Lab File #E52744
- VDE #0884 Available with Option 1
DESCRIPTION
The MCT5210/5211 are optocouplers with a high effi- ciency AlGaAs LED optically coupled to a NPN pho- totransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VAC RMS Because these parts have guaranteed CTRs at one and three mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection. Maximum Ratings Emitter Power Dissipation at 25 Derate Linearly from 25 C Detector Derate Linearly from 25 C Package RMS Total Package Dissipation at 25 Derate Linearly from 25 C Comparative Tracking Index per Isolation Resistance V IO =500 V, T A =25 W V IO =500 V, T A =100 W C to +100 C C to +150 C
Electrical Characteristics
(25 Parameter Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.2 1.5 V I F =5 mA Reverse Voltage V R 6V I R =10 m A Detector HFE 100 200 V CE =5 V I C =100 m A BV CEO
30 V I
C =100 m A BV ECO 7V I E =100 m A BV CBO
70 V I
E =10 m A I CEO 5 100 nA V CE =10 V Package (0–70 Saturated Current Transfer Ratio V CE =0.4 V MCT5210 MCT5211 MCT5211 CTR CEsat CTR CEsat CTR CEsat 100 120 200 150 I F =3.0 mA I F =1.6 mA I F =1.0 mA Current Transfer Ratio V CE =5.0 V MCT5210 MCT5211 MCT5211 CTR CTR CTR 150 110 150 300 225 I F =3.0 mA I F =1.6 mA I F =1.0 mA Collector-Base Current Transfer Ratio V CE =4.3 V MCT5210 MCT5211 MCT5211 CTR CB CTR CB CTR CB 0.2 0.3 0.25 0.4 0.6 0.5 I F =3.0 mA I F =1.6 mA I F =1.0 mA Saturation Voltage MCT5210 V CEsat 0.25 0.4 V I F =3.0 mA I C =1.8 mA MCT5211 V CEsat 0.25 0.4 V I F =1.6 mA I C =1.6 mA .010 (.25) typ. .114 (2.90) .130 (3.30) .130 (3.30) .138 (3.50) .031 (.080) min. .300 (7.62) typ. .031 (.80) .035 (.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° .300–.347 (7.62–8.81) typ. 3°–9° .048 (1.22) .052 (1.32) Dimensions in inches (mm) Base Collector Emitter Anode Cathode NC MCT5210 MCT5211 AlGaAs LED/ Phototransistor Optocoupler
Figure 10. Collector current vs. LED current Figure 11. Collector current vs. LED current Figure 12. Transistor current gain vs. base current Figure 13. Transfer curve
10 V5 V2 V1 V
Figure 14. Transfer curve Figure 15. Propagation delay vs. base emitter resistor Figure 16. Propagation delay vs. base emitter resistor Figure 17. Propagation delay vs. base emitter resistor