MCT270

MCT270 ISOCOM | Alldatasheet

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Unit 25B, Park View Road West, Park V iew Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92544m-AAS/A1 OPTION G 7.62 0.26 0.5 Dimensions in mm SUR FACE MOUNT OPTION SM 10.16 7.0 6.0 1.2 7.62 3.0 13° Max 3.35 4. 0 3. 0 2.54 0.26 7.62 6.62 0.5 OPTICAL LY COUPLED ISOL ATOR PHOTOTRANSISTOR OUTPUT 3 4 2 5 APPRO V ALS l UL recognised, File No. E91231

DESCRIPTION

The MCT27_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FE ATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation V oltage (5.3kV RMS ,7.5kV PK ) l All electrical parameters 100% tested l Custom electrical selections available APPLIC ATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances MCT270, MCT271, MCT272, MCT273, MCT274, MCT275, MCT276, MCT277 ABSOLUTE MAXIMUM R ATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 60mA Reverse V oltage 6V Power Dissipation 105mW OUTPUT TRANSISTOR Collector-emitter V oltage BV CEO 30 V (MCT275 only) BV CEO 80 V Collector-base V oltage BV CBO 70 V Emitter-base V oltage BV EBO 5 V Power Dissipation 160mW POWER DISSI PA TION Total Power Dissipation 200mW (derate linearly 2.67mW/ ° C above 25°C) 10.46 9.86 0.6 0.1 1.25 0.75

PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F ) 1.2 1.5 V I F = 20mA Reverse Voltage (V R ) 3 V I R = 10 µA Reverse Current (I R ) 10 µA V R = 3V Output Collector-emitter Breakdown (BV CEO ) MCT27x (except MCT275) 30 V I C = 1mA MCT275 ( note 2 ) 80 V Collector-base Breakdown (BV CBO ) 70 V I C = 100 µA Emitter-base Breakdown (BV EBO ) 5 V I E = 100 µA Collector-emitter Dark Current (I CEO ) 50 nA V CE = 10V Coupled Current Transfer Ratio (CTR) MCT270 50 % 10mA I F , 10V V CE MCT271 45 90 % MCT272 75 150 % MCT273 125 250 % MCT274 225 400 % MCT275 70 210 % MCT276 15 60 % MCT277 100 % Collector-emitter Saturation VoltageV CE(SAT) 0.4 V 16mA I F , 2mA I C Input to Output Isolation Voltage V ISO 5300 V RMS See note 1

7500 V PK See note 1

Input-output Isolation Resistance R ISO 5x10 10 Ω V IO = 500V (note 1) Switching Time t ON , t OFF MCT270,272 10 µs V CC = 5V , R L = 100 Ω, MCT271 7 µs I C = 2mA, (fig 1) MCT273 20 µs MCT274 25 µs MCT275,277 15 µs MCT276 3.5 µs 7/12/00 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) Output Output R L = 100 Ω Input 10% 90% 90% 10% ton tr FIG 1 V CC toff tf Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. DB92544m-AAS/A2

Ambient temperature T A ( °C ) 150 200 Ambient temperature T A ( °C ) Collector power dissipation P C (mW) -30 0 25 50 75 100 125 Forward Current vs. Ambient Temperature 100 Forward current I F (mA) -30 0 25 50 75 100 125 -30 0 25 50 75 100 Collector-emitter saturation voltage V CE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.04 0.08 0.12 0.16 0.20 0.24 0.28 I F = 16mA I C = 2mA Ambient temperature T A ( °C ) Collector Power Dissipation vs. Ambient Temperature Ambient temperature T A ( °C ) 0.5 1.0

1.5 I F = 10mA

V CE = 10V Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio -30 0 25 50 75 100 1 2 5 10 20 50 0.4 0.6 0.8 1.0 1.2 0.2 1.4 V CE = 10V T A = 25°C Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current Forward current I F (mA) Collector Current vs. Collector-emitter Voltage (Normalised to MCT270,273,275,277) 7/12/00 Collector-emitter voltage V CE ( V ) Collector current I C (mA) 0 2 4 6 8 10

50 T A = 25°C

I F = 5mA