MCT210 ISOCOM | Alldatasheet

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Unit 25B, Park View Road West, Park V iew Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB91089-AAS/A2 OPTICAL LY COUPLED ISOL ATOR PHOTOTRANSISTOR OUTPUT ABSOLUTE MAXIMUM R ATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 60mA Reverse V oltage 6V Power Dissipation 105mW OUTPUT TRANSISTOR Collector-emitter V oltage BV CEO 30V Collector-base V oltage BV CBO 30V Emitter-collector V oltage BV ECO 6V Power Dissipation 160mW POWER DISSI PA TION Total Power Dissipation 200mW (derate linearly 2.67mW/ ° C above 25°C) APPRO V ALS l UL recognised, File No. E91231

DESCRIPTION

The MCT210 optically coupled isolator consists of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FE ATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation V oltage (5.3kV RMS ,7.5kV PK ) l All electrical parameters 100% tested l Custom electrical selections available APPLIC ATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances MCT210 3 4 2 5 Dimensions in mm 3.3 2.54 6.4 6.2 1.54 8.8 8.4 4.3 4.1 0.5 0.5 0.3 7.8 7.4 9.6 8.4 10.16 0.26 OPTION G 5.08 max. SUR FACE MOUNT OPTION SM 1. 2 0. 6 1. 4 0.910. 2 9.5

PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F ) 1.2 1.5 V I F = 40mA Reverse Voltage (V R ) 6 V I R = 10 µA Reverse Current (I R ) 10 µA V R = 6V Output Collector-emitter Breakdown (BV CEO ) 30 V I C = 1mA ( note 2 ) Collector-base Breakdown (BV CBO ) 30 V I C = 10 µA Emitter-collector Breakdown (BV ECO ) 6 V I E = 100 µA Collector-emitter Dark Current (I CEO ) 50 nA V CE = 10V Coupled Current Transfer Ratio (CTR) 50 % 3.2mA I F to 32mAI F , 0.4V V CE 150 % 10mA I F , 5V V CE Collector-emitter Saturation VoltageV CE(SAT) 0.4 V 32mA I F , 16mA I C Input to Output Isolation Voltage V ISO 5300 V RMS See note 1

7500 V PK See note 1

Input-output Isolation Resistance R ISO 5x10 10 Ω V IO = 500V (note 1) Rise Time tr 4 µs V CC = 5V , fig 1 Fall Time t f 5 µs I C = 2mA, R L = 100 Ω Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 7/12/00 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) Output Output R L = 100 Ω Input 10% 90% 90% 10% ton tr FIG 1 V CC toff tf

Ambient temperature T A ( °C ) 150 200 Ambient temperature T A ( °C ) Collector power dissipation P C (mW) -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature 100 Forward current I F (mA) -30 0 25 50 75 100 125 0.5 1.0

1.5 I F = 10mA

V CE = 5V Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio Ambient temperature T A ( °C ) -30 0 25 50 75 100 1 2 5 10 20 50 1.2 1.6 2.0 2.4 2.8 V CE = 0.4V T A = 25°C Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current Forward current I F 0.8 0.4 -30 0 25 50 75 100 Collector-emitter saturation voltage V CE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.08 0.16 0.24 0.32 0.40 0.48 0.56 I F = 32mA I C = 16mA Ambient temperature T A ( °C ) 120 160 200 240 280 320 Forward current I F (mA) Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) V CE = 5V T A = 25°C 1 2 5 10 20 50