MCT2X ISOCOM | Alldatasheet
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Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 12/2/03 DB92279m-AAS/A2 OPTION G 7.62 0.26 0.5 Dimensions in mm SURFACE MOUNT OPTION SM 10.16 7.0 6.0 1.2 7.62 3.0 13° Max 3.35 4.0 3.0 2.54 0.26 7.62 6.62 0.5 MCT2X, MCT2EX MCT2, MCT2E 3 4 2 5 ABSOLUTE MAXIMUM R ATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 60mA Reverse Voltage 6V Power Dissipation 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BV CEO 30V Collector-base Voltage BVCBO 70V Emitter-collector Voltage BVECO 6V Power Dissipation 160mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/ °C above 25°C) APPROVALS l l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - - STD - G form - SMD approved to CECC 00802 l l Certified to EN60950 by the following Test Bodies :- Nemko - Certificate No. P01102465 Fimko - Certificate No. FI18162 Semko - Reference No. 0202041/01-25 Demko - Certificate No. 311161-01 l l BSI approved - Cetificate No. 8001
DESCRIPTION
The MCT2 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package.
FEATURES
l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available
APPLICATIONS
l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances10.46 9.86 0.6 0.1 1.25 0.75 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA Reverse Current (IR) 10 µA VR = 6V Output Collector-emitter Breakdown (BV CEO) 30 V IC = 1mA ( note 2 ) Collector-base Breakdown (BV CBO) 70 V IC = 100µA Emitter-collector Breakdown (BV ECO) 6 V IE = 100µA Collector-emitter Dark Current (I CEO) 50 nA VCE = 10V Collector-base Dark Current (I CBO) 20 nA VCE = 10V Coupled Current Transfer Ratio (CTR) MCT2 20 % 10mA IF , 10V V CE MCT2E 50 % 10mA IF , 10V V CE Collector-emitter Saturation VoltageVCE(SAT) 0.4 V 16mA IF , 2mA IC Input to Output Isolation Voltage V ISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance R ISO 5x10 10 Ω VIO = 500V (note 1) Turn-on Time ton 3 µs VCC = 10V , fig 1 Turn-off Time toff 3 µs IC= 2mA, RL = 100 Ω Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 12/2/03 ELECTRICAL CHARACTERISTICS ( T A= 25°C Unless otherwise noted ) Output Output RL = 100Ω Input 10% 90% 90% 10% ton tr FIG 1 VCC toff tf
Ambient temperature T A ( °C ) 150 200 Ambient temperature T A ( °C ) Collector power dissipation P C (mW) -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature 100 Forward current I F (mA) -30 0 25 50 75 100 125 0.5 1.0
1.5 IF = 10mA
VCE = 10V Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio Ambient temperature T A ( °C ) -30 0 25 50 75 100 1 2 5 10 20 50 0.4 0.6 0.8 1.0 1.2 0.2 1.4 VCE = 10V TA = 25°C Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current Forward current I F (mA) 1 2 5 10 20 50 1.2 1.6 2.0 2.4 2.8 VCE = 0.4V TA = 25°C Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current Forward current I F (mA) 0.8 0.4 -30 0 25 50 75 100 Collector-emitter saturation voltage V CE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.04 0.08 0.12 0.16 0.20 0.24 0.28 IF = 16mA IC = 2mA Ambient temperature T A ( °C )