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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Thyristors MCRN100- 6,- 8
FEATURES
Current-IGT : 200 µA I TRMS : 0. 8 A VRRM/V DRM : MCRN100-6: 400 V MCRN100-8: 600 V Operating and storage junction temperature range T J，Tstg : -55℃ to +150 ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified） Parame ter Symbol Test conditions Min Max Unit On state v oltage * VTM I TM=1A 1.7 V Gate trigger volt age VGT V AK=7V 0.8 V Peak Repe titive forward and reverse blocking voltage MCRN100-6 MCRN100-8 VDRM AND VRRM IDRM= 10 µ A 400 600 V Peak forward or reverse blocking Current IDRM IRRM V AK= Rated VDRM or V RRM 10 µA Holding curre nt IH I HL= 20mA ,VAK = 7 V 5 mA AA 5 30 µA A 30 380 µA B 80 200 Gate trigger current IGT VAK=7V µA * Forward current applied for 1 ms maximum duration ， duty cycle≤1%。 SOT-89-3L 1.GATE 2.ANODE 3.KATHODE www.cj-elec.com 1 D,Sep,2015
0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.5 1.0 1 .5 2.0 2.5 3.0 25 50 75 100 125 AMBIENT T EMPERATURE Ta ( )℃ Pulsed IT =20mA、IG=50mA HOLDING CURRENT IH (uA) TaIH —— Pulsed VAK=7V GAT E TRIGGER VOLTAGE VGT (V) AMBIENT T EMPERATURE Ta ( )℃ TaVGT —— Pulsed IG=50mA Ta=25℃ Ta=100 o C ON- STATE VOLTAGE VTM (V) ON-STATE CURRENT IT (A) VTM IT —— Pulsed VAK=7V GATE TRIGGER CURRENT IGT (uA) AMBIENT T EMPERATURE Ta ( )℃ Ta IGT —— Typical Characteristics www.cj-elec.com 2 D,Sep,2015
A 1.400 1. 600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3 D,Sep,2015
www.cj-elec.com 4 D,Sep,2015