MCR72-1 NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Controlled Rectifier Reverse Blocking Triode Thyristor ... designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.
- Center Gate Geometry for Uniform Current Density
- All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
- Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
- Low Trigger Currents, 200 jiA Maximum for Direct Driving from Integrated Circuits MCR72-1 thru MCR72-8 SCR*
8 AMPERES RMS
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1) (Tj = -40 to 110°C) (1/2 Sine Wave, RQK = 1 Ml) MCR72 -4 On-State RMS Current (TC = 83°C) Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hi, Tj = -40 to 110°C) Circuit Fusing (t = 1 to 8.3 ms) Peak Gate Voltage (t «; 10 /«>) Peak Gate Current (t =£ 10 /is) Peak Gate Power (t =s 10 fj.s) Average Gate Power Operating Junction Temperature Range Symbol VDRM or VRRM ITIRMSI ITSM |2t VGM IGM PGM PG(AV) TJ Value 100 200 300 400 500 600 100 0.75 -40 to +110 Unit Volts Amps Amps A2s Volts Amp Watts Watts Note .1- Ratings apply for negative gate voltage or RQK = 1 kfl Devices shall not hive a positive gate voltaga concurrently with a :?;.J negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (com.) Quality Semi-Conductors
- MCR71 S«ri«s ELECTRICAL CHARACTERISTICS (Tc - 25°C unl«i> otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (Note 1) (Rated VDRM or VRRM) Tj = 26°C Tj = 125"C On-State Voltage (Note 2) «TM - 70 A) MCR70 series (ITM-175A) MCR71, aeries HTM - 860 A, tw - 1 ms) Note 3 MCR70 series HTM - 1700 A, tw - 1 ma) Note 3 MCR71 series Gate Trigger Current (VD - 12 v, RL - 100 m Gate Trigger Voltage (VD - 12 Vote, RL - 100 n> (VD - Rated VDRM, RL - 1 Ml. Tj - 125"C) Holding Current OTM - 0.5 A, Gate-Open) Latching Current (VD - 12 Vdc, IQ - 150 mA, tr * 60 /is) Critical Rate-of-Rise of Off-State Voltage (VD - Rated VQRM- Gate Open, Exponential Waveform, TC - 125°C) Turn-On Time (Note 3) (VD - Rated VDRM. 'G = 150 mA) (ITM " 70 Amps, peak) MCR70 series OTM • 11° A™0*- PMk> MCR?1 MrlM Symbol 'DRM. IRRM VTM 'GT VGT IH IL dv/dt ton Rnin " "— 0.2 Typ 1.5 1.7 1.2 Max 1.85 2-1 1.5 Unit mA Volts mA volt* mA mA V//is ia Notaa: 1. Tha ratad voKagaa can ba appllad ovar tha ratad oparating junction tamparaturaa without Incurring damaga. Ratings apply for ihortad- opan or ahortad-gata condition or nagatlva vottaga on tha gata. Davlcai should not ba taatad for blocking capability In a mannar luch that tha voltaga auppllad axcaadi tha ratad blocking voKagaa. 2. Duty Cyeta « 1%, Pulaa WMtti « 300 to. 3. Charactariatlc appll** for t^ - 1 ma. tw ia daflnad aa 6 tima conatanta of an axponantlallv daoaylng currant pulaa. 4. The gata oontrollad tum-on tima in a crowbar drcutt witl ba Influancad by tha dreutt induetanea.