MCR72 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
^mi-Conductor ^Products., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors .. . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface.
- Center Gate Geometry for Uniform Current Density
- All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
- Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
- Low Trigger Currents, 200 (jA Maximum for Direct Driving from Integrated Circuits MCR72 SCRs
8 AMPERES RMS
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.) (TO-220AB) Rating Peak Repetitive Forward and Reverse Blocking VoltageO) (Tj =-40 to 110°C, 1/2 Sine Wave, RQK = 1kQ) MCR72-2 MCR72-3 MCR72-4 MCR72-6 MCR72-8 MCR72-10 On-State RMS Current (Tc = 83°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, Tj = -40 to 110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Voltage (t « 10 us) Peak Gate Current (t s= 10 (is) Peak Gate Power (t s; 10 us) Average Gate Power Operating Junction Temperature Range Symbol VDRM or VRRM !T(RMS) !TSM |2t VGM ]GM PGM PG(AV) TJ Value 100 200 . 400 600 800 100 0.75 -40to+110 Unit Volts Amps Amps A2s Volts Amp Watts Watts for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Ounlifv
MAXIMUM RATINGS — continued Rating Storage Temperature Range Mounting Torque Symbol Tstg Value -40to + 150 Unit in. Ib. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol ReJC R0JA Max 2.2 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (Tc = 25°C, RQK = 1 kn unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current 1) (VAK = Rated VDRM °r VRRM) TJ = 25°C Tj = 110°C On-State Voltage (IjM = 16 A Peak, Pulse Width ss 1 ms, Duty Cycle s= 2%) Gate Trigger Current (Continuous dc)(2) Gate Trigger Voltage (Continuous dc) (VD = 12V, RL = 100 Q) (VD = Rated VDRM. RL = 1° k". TJ = 110°C) Holding Current (VD = 12V, ITM = 100 mA) Critical Rate-of-Rise of Forward Blocking Voltage (VD = Rated VDRM. TJ = 110°C, Exponential Waveform) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 16 A, IG = 2 mA) Symbol !DRM. !RRM VTM IGT VGT IH dv/dt tgt Min 0.1 Typ 1.7 0.5 Max 500 200 1.5 Unit uA MA Volts uA Volts mA V/us us 1. Ratings apply for negative gate voltage or RGK = 1 kQ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. Does not include RQK current.