MCR703A NJSEMI | Alldatasheet
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Technical content
<SEm.i-Condu.ctoi ZPioaucti, One.. Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors ... PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical.
- Small Size
- Passivated Die Surface for Reliability and Uniformity
- Low Level Triggering and Holding Characteristics
- Recommend Electrical Replacement for C106
- Available in Two Package Styles: Surface Mount Leadforms — Case 369A Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
- To Obtain "DPAK" in Surface Mount Leadform (Case 369A): Shipped in Sleeves — No Suffix, i.e., MCR706A Shipped in 16 mm Tape and Reel — Add "RL" Suffix to Device Number, i.e., MCR706ARL
- To Obtain "DPAK" in Straight Lead Version: Shipped in Sleeves — Add '1' Suffix to Device Number, i.e., MCR706A1 MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.) MCR703A thru MCR708A* SCRs
4.0 AMPERES RMS
Peak Repetitive Forward and Reverse Blocking Voltage (1/2 Sine Wave) (RGK = 1 ooo ohms, MCR/OSAI , MCRTOSA TC = -40 to +110°C) MCR704A1, MCR704A MCR706A1.MCR706A MCR708A1, MCR708A Peak Non-repetitive Reverse Blocking Voltage (1/2 Sine Wave, RQK = 1000 Ohms, TC = -40 to +110°C) MCR703A1, MCR703A MCR704A1, MCR704A MCR706A1 , MCR706A MCR708A1 , MCR708A Average On-State Current (TC = -40 to +90°C) (TC = +100°C) Surge On-State Current (1/2 Sine Wave, 60 Hz, TC = +90°C) (1/2 Sine Wave, 1.5 ms TC = +90°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 10 us, TC = 90°C) Average Gate Power (t = 8.3 ms, TC = 90°C) Peak Forward Gate Current Peak Reverse Gate Voltage Operating Junction Temperature Range Storage Temperature Range Symbol VDRM or VRRM VRSM !T(AV) !TSM |2t PGM PG(AV) !GM VRGM TJ Tstg Value 100 200 400 600 150 250 450 650 2.6 1.6 2.6 0.5 0.1 0.2 -40 to +110 -40 to +150 Unit Volts Volts Amps Amps A2S Watt Watt Amp Volts CASE 369A CASE 369 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Qiinlitv