MCR70 NJSEMI | Alldatasheet
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c^zmi-L.onaiicto'i LPtoaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MCR7CM )A Series MCR71 Series SCRs 35 and 55 AMPERES RMS 50 thru 400 VOLTS MAXIMUM RATMGS ITj = 2S°C unlau otherwisa noted.) Rating Peak Repetitive Forward or Reverse Blocking Voltage, Note i (Tj = 25 to 125°C Gate Open} MCR70-I )A 2 MCR71 3 Peak Discharge Current, Note 2 On-State Current (Tc * 75"C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hi, Tj = 125CC) Circuit Fusing (t = 8,3 ms) Critical Rate-of-Ri$e Of Current, Note 3 Forward Peak Gate Power <l ^ 20 (*sl Forward Average Gate Power Forward Peak Gate Current (t *: 20 ps) Operating Junction Temperature Range Storage Temperature Range Mounting Torque Symbol VQRM or VRRM ITM IT<RMSI "T(AV) ITSM |2t di/dt PGM PG<AV> IGM TJ Tstg Valm MCR70-( )A MCR71 100 400 850 350 510 100 T700 550 1255 200 0.5 -40 to +125 -40 to +150 Unit Volts Amps Amps Amps A^s A/MS Watts Watts Amps in. |tj. THERMAL CHARACTERISTICS Chunictetistk Thermal Resistance, Junction to Case Symbol R0JC Max Unit °C/W Nota 1. V[)RM iClt^ VRRM '*"" all types can be applied on a continuous basis. Ratings apply for zero or negativo gate voltage; however, positive gate voltage shall not be applied concurrent with negati' potential on th« anode. Blocking voltages shall not ba tested with a constant current source sucti that the voltage ratings of ttw devices are exceeded. 2. Rating is for tw - 1 ms. See Figure 1 for IJM limits of an exponentially decaying current pulse of various durations. 3. Test Conditions: IG - 150 mA, VQ = Rated VQRM- ITM ~ RaWd Value. Tj = 126°C. Qualify Semi-Conductors
MCR70-I )A Series • MCR71 Series ELECTRICAL CHARACTERISTICS (Tc - 25"C unless otherwise noted ) Characteristic Peak Forward or Reverse Blocking Current (VAX = Rated VDRM <>r VRRM< Gate Open) Tj = 25CC Tj - 125°C On-State Voltage, Note 1 (IjM - 70 A) MCR70 series (IjM ^ 175 A> MCR71 series (IjM = 850 A, tw = 1 ms) Note 2 MCR70 series (IjM = 1700 A, tw = 1 ms) Note 2 MCR71 series Gate Trigger Current (Continuous de) (VD = 12 v, RL - 100 ri] Gate Trigger Voltage (Continuous del (VD = 12 v, RL = 100 ii) <vD = Rated VDRM, RL = 1 kn- TJ - 12S°cl Holding Current (IjM = 0.5 A, Gate Open) Latching Current (VD = 12 Vdc, 1G - 15D mA, tr * 50 ^s) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Gate Open, Exponential Waveform, TC = 125°C) Turn-On Time, Note 3 <VD - Rated VDR^, IQ - 150 mA) OTM = 70 A Peak) MCR70 series (ITM ^ no A Peak) MCfl7l series Symbol IDRM- 'RRM VTM IGT VGT IH IL dv/dt lon Min 0.2 Typ 1,5 1.7 1.2 Max 1.85 2.1 1.5 Unit mA Volts mA Volts mA mA V/f*s MS Notes: 1 Dutv Cycle ^ 1%, Pulse Width =s 300 ji.s 3 Characteristic applies for tw - 1 ms. tw is defined as 5 time constants of an exponentially decaying current puls 3, The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.