MCR65-1 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

<Se.m.i-dondact oi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 Silicon Controlled Rectifier Reverse Blocking Triode Thyristor ,.. designed for industrial and consumer applications such as power supplies; battery chargers; temperature, motor, light, and welder controls.

  • Economical for a Wide Range of Uses
  • High Surge Current — IjsM = 550 Amps
  • Rugged Construction in Either Pressfit, Stud, or Isolated Stud
  • Glass Passivated Junctions for Maximum Reliability MAXIMUM RATINGS MCR63-1 thru 10 MCR64-1 thru 10 MCR65-1 thru 10 SCRs

55 AMPERES RMS

Peak Repetitive Forward and Reverse Blocking Voltage -1 MCR63 -4 MCR64 -5 MCR65 -6

  • 10 Non-Repetitive Peak Reverse Blocking Voltage (t * 5 ms) -1 MCR63 -4 MCR64 -5 MCR65 -6 -10 Forward Current RMS Peak Surge Current (One cycle, 60 Hz, Tj - -40 to +125°C) Circuit Fusing Considerations . (Tj = -40 to + 125°C. t = 1 to 8.3 ms) Peak Gate Power Average Gate Power (Pulse Width -= 2 us) Peak Forward Gate Current Peak Gate Voltage — Forward Reverse Operating Junction Temperature Range Storage Temperature Range Stud Torque Symbol VDRM(1 or VRRM VRSM 'TIRMS) 'TSM |2t PGFM PGF(AV) IGFM VGFM VGRM TJ Tstg Value 100 200 300 400 500 600 700 800 150 300 400 500 600 700 800 900 550 1255 0.5 -40 to -H2S -40 to -t-150 Unit Volts Volts Amps Amps A2S Watts Watt Amps Volts in. Ib. MCR64 SwiW MCR63 Series IMCR65 Series Quality Semi-Conductors

MCR63-1 thru MCR63-10 • MCR64-1 thru MCR64-10 • MCR65-1 thru MCR65-10 THERMAL CHARACTERISTICS Charactariatle Thermal Resistance, Junction to Case Pressfit and otud Isolated Stud Symbol "we MM 1.1 Unit

  • CM (1) VRRM for all type* can ba applied on a continuoui dc baaia without incurring damege Ratings apply for tero or negative gate voltage. Device* ahall not have a positive biaa applied to the gate concurrently with a negative potential on tha anode. ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (Rtted VDRM or VRRM. 9«« °P«n) Tj = 25*C Tj = 125-0 Forward "On" Voltage OTM - 1?5 A Peak) Gate Trigger Current (Continuous dc) <vD - 12 v, RL - 50 m TC = 25'C TC- -40°C Gate Trigger Voltage (Continuous dc) <vD = 12 v, RL = so m TC = 25°c TC = -40-C (VD = Rated VDRM. RL = 1 kn, Tj = 126-0 Holding Current (VD = 12 V, RL = 50 n. Gate Open) Forward Voltage Application Rate (Tj - 125'C, VD = Rated VDRM) Symbol <DRM' IRRM VTM IGT VGT IH dv/dt Mln 0.2 Max 3.5 Unit HA mA Volts mA Volts mA V/MS