MCR649-1 NJSEMI | Alldatasheet
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^EmL-Conductoi ^Pioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MCR649-1 thru MCR649-7 I, = 20 A RMS = 25-500 V (TO-41J (TO-3) Industrial-type, silicon controlled rectifiers in a "diamond" package for applications requiring a high surge-current rating or low thermal resistance. For units with pins (TO-3) specify devices MCR649P-1 thru MCR649P-7. MAXIMUM RATINGS (Tj - 100°C unless otherwise noted) Rating Peak Reverse Blocking Voltage* MCR649-1 Forward Current RMS (All Conduction Angles) Circuit Fusing Considerations (Tj = -40 to +100°C; t S 8.3 ms) Peak Forward Surge Current (One Cycle, 60 Hz, Tj = -40 to +100°C) Peak Gate Power - Forward Average Gate Power - Forward Peak Gate Current - Forward Peak Gate Voltage - Forward Reverse Operating Junction Temperature Range Storage Temperature Range Symbol VROM* If I2t lFM(Surge) PGFM PGF(AV) 'GFM VGFM VGRM TJ Tstg Value 100 200 300 400 500 275 260 5.0 0.5 2.0 5.0 -40 to +100 -40 to +150 Unit Volts Amp A2S Amp Watts Watt Amp Volts *VROM for a11 types can be applied on a continuous dc basis without incurring damage. VROM ratings apply for zero or negative gate voltage. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers co verify that datasheets are current before placing orders. Qiinllfv
MCR649-1 thru MCR649-7 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Peak Forward Blocking Voltage (Tj = 100°C) MCR649-1 Peak Forward Blocking Current (Rated VFOM with gate open, Tj = 100°C) Peak Reverse Blocking Current (Rated VFOM with gate open, Tj = 100°C) Gate Trigger Current (Continuous dc) (Anode Voltage = 1 Vdc, RL = 50 Si) Gate Trigger Voltage (Continuous dc) (Anode Voltage = 1 Vdc. R. = 50 ft) I-/ (Anode Voltage = Rated VFOM' RL =.50S». Tj = 100°C) Holding Current (Anode Voltage = 1 Vdc, Gate Open) Forward On Voltage (IF = 20 Adc) Turn-On Time (td + tr) (IG = 50 mA, IF = 10 A) Turn-OH Time (IF => 10 A, IR = 10 A, dv/dt = 20 V/ jis min, Tj=100°C) (VFXM ~ rated voltage) 'VRXM = rated voltage) Forward Voltage Application Rate (Gate open, Tj = 100°C) MCR649-1 thru MCR649-4 MCR649-5 thru MCR649-7 Thermal Resistance (Junction to Case) Symbol VFOM JFOM !ROM JGT VGT VGNT JHO VF *on loff dv/dt 0JC Min 100 200 300 400 500 0.3 Typ 1.0 1.1 1.0 1.0 Max 5.0 5.0 3.5 — ~ 1.5 1.5 Unite Volts mA mA mA Volts mA Volts ns US V/MS °C/W