2N6504 NJSEMI | Alldatasheet
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New Jersey Semi-Conductor Products, Ine. 20 STEF.N AVE. TELEPHONE: (201) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 . 2N6504 Thyristors thru Silicon Controlled Rectifiers 2N6509 ... designed primarily for half-wave ac control applications, such as motor MCR225-5 controls, heating controls and power supply crowbar circuits. MCR225-7 © Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability MCR225-9 ‘© Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat . Dissipation and Durability MCR225-12 © Blocking Voltage to 1000 Volts @ 300 A Surge Current Capability SCRs 50 thru 100 VOLTS noi ox ge B CASE 221A-02 ‘TO-220AB MAXIMUM RATINGS Peak Reverse Blocking Voltage (1) VRRM |. Volts +*2N6504 50 *2N6505 100 +*2N6506 + 200 MCR225-5 300 ' ‘*2N6507 400 1 MCR225-7 500 *2N6508 600 MCR225-9 700 *2N6509 800 MCR225-12 1000 Forward Current (Tc = 85°C) riRMS) 25 {All Conduction Angles) Tay) 16 Peak Non-Repetitive Surge Current — 8.3 ms 300 (1/2 Cycle, Sine Wave) 1.5 ms 350 “Indicates JEDEC Registered Data. (cont.) (1) Vane for ail types can be applied on a continuous de basis without incurring damage. Ratings apply for zero or ‘negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Quality Semi-Conductors
New euey Semi-Conductor Products, Ine. ee ee ee ee eee eee 20 STERN AVE. * TELEPHONE: (201) 376-: SPRINGFIELD, NEW JERSEY 07081 (201) 376-2922 USA (212) 227-6005 . FAX: (201) 376-8960 2N6504 thru 2N6509 ¢ MCR225-5 e MCR225-7 ¢ MCR225-9 e MCR225-12 MAXIMUM RATINGS — continued a Forward Peak Gate Power [Pom | 20 Watts Forward Average Gate Power Poa [| 0s [Watt * Forward Pek Gat Caen [ew [oe Opening unetonTorpertare Rae [1 [-werel | “THERMAL CHARACTERISTICS aa ana MT [tue [1s | ow] ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) . [Charmer Sembet[ Min [Tym [Max | Uni | Peak Forward Blocking Voltage VoRM Volts (Ty = 125°C) *2N6504 50 *2N6505 100 *2N6506 200 MCR225-5 300 *2N6507 400 MCR225-7 500 *2N6508 600 MCR225-9 700 *2N6509 800 MCR225-12 1000 Peak Forward or Reverse Blocking Current IDRM. RRM. (Rated Vor or VaRM) Ty = 25°C uA Ty = 125°C a mA *Forward “On” Voltage (1) Vm (rm = 50 A) . *Gate Trigger Current (Continuous de) To= 2c. et 40 (Anode Voltage = 12 Vde, RL = 1000hms) Tc = ~40°C 75 “Gate Trigger Voltage (Continuous de) Ver (Anode Voltage = 12 Vdc, Ri = 100 Ohms, Tc = —40°C) Gate Non-Trigger Voltage . Veo Volts (Anode Voltage = Rated VoRM. RL = 100 Ohms, Ty = 125°C) “Holding Current mA (Anode Voltage = 12 Vde, To = —40°C) *Turn-On Time tet 18 (it = 25, Ig = 50 mAde) ‘Turn-Off Time (VpRM = rated voltage) tq (It = 254, Ip = 25A) (itm = 25A. IR = 254, Ty = 125°C) Critical Rate of Rise of Off-State Voltage dvidt Vis (Gate Open, Rated VorM. Exponential Waveform) “indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. Quality Semi-Conductors