MCR100 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Sensitive Gate Allows Triggering by Microcontrollers and Other nG Logic Circuits Ao &i —° K
  • Blocking Voltage to 600 V
  • On-State Current Rating of 0.8 A RMS at 80°C
  • High Surge Current Capability - 10 A
  • Minimum and Maximum Values of IGT, VGT and IH Specified TO~92 for Ease of Design
  • Immunity to dV/dt - 20 V/|xsec Minimum at 110°C
  • Glass-Passivated Surface for Reliability and Uniformity STRAIGHT LEAD BULK PACK NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Concluctors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

MAXIMUM RATINGS (Tj = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Notes 1 and 2) (Tj = -40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) MCR100-3 MCR100-4 MCR100-6 MCR100-8 On-State RMS Current, (Tc = 80°C) 180° Conduction Angles Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, Tj = 25°C) Circuit Fusing Consideration, (t = 8.3 ms) Forward Peak Gate Power, (TA = 25°C, Pulse Width < 1 .0 (is) Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) Forward Peak Gate Current, (TA = 25°C, Pulse Width < 1.0 us) Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width <, 1 .0 us) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Symbol VDRM, VRRM Ij(RMS) !TSM I2t PGM PG(AV) 'GM VGRM Tj Tstg Value 100 200 400 600 0.8 0.415 0.1 0.10 1.0 5.0 -40 to 110 -40 to 1 50 Unit V A A A2s W W A V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. See ordering information for exact device number options. THERMAL CHARACTERISTICS Characteristic Thermal Resistance,Junction-to-Case Junction-to- Ambient Lead Solder Temperature ( < 1/16" from case, 10 sees max) Symbol ROJC RHJA TL Max 200 260 Unit °C/W ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Min | Typ | Max | Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) Tc = 25°C (VD = Rated VDRM and VRRM; RGK = 1 kO) Tc = 110°C IDRM. IRRM 100 MA ON CHARACTERISTICS Peak Forward On-State Voltage* (lTM = 1.0APeak@TA = 25°C) Gate Trigger Current (Continuous dc) (Note 3) Tc = 25°C (VAK = 7.0 Vdc, RL= 1000) Holding Current<2> Tc = 25°C (VAK = 7.0 Vdc, Initiating Current = 20 mA) Tc = -40°C Latch Current Tc = 25°C (VAK = 7.0 V, Ig = 200 (iA) Tc = -40°C Gate Trigger Voltage (Continuous dc) (Note 3) TC = 25°C (VAK = 7.0 Vdc, RL = 1 00 £3) Tc = -40°C VTM IGT IH IL VGT 0.5 0.6 0.62 1.7 200 5.0 0.8 1.2 V HA mA mA V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 £3,Tj = 110°C) Critical Rate of Rise of On-State Current (IPK = 20 A; Pw = 10 |isec; diG/dt = 1 A/|isec, Igt = 20 mA) dV/dt di/dt V/|is A/us

  • Indicates Pulse Test: Pulse Width < 1.0 ms, Duty Cycle < 1%. 3. RGK = 1000 Q included in measurement. 4. Does not include RGK in measurement.