MCR100-3 SEMTECH_ELEC | Alldatasheet
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Dated : 06/12/2003 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited MCR100-3 … MCR100-8 Absolute Maximum Ratings (TJ = 25 OC unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ = 25 to 125 °C, RGK = 1 KΩ) MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7 MCR100-8 V DRM and VRRM 100 200 300 400 500 600 V Forward Current RMS (All Conduction Angles) I T(RMS) 0.8 A Peak Forward Surge Current, T A = 25 °C (1/2 Cycle, Sine Wave, 60 Hz) ITSM 10 A Circuit Fusing Considerations (t = 8.3 ms) I 2t 0.415 A 2s Forward Peak Gate Power (T A = 25 °C, PW ≤ 1 µs) PGM 0.1 W Forward Average Gate Power (T A = 25 °C) PGF(AV) 0.01 W Forward Peak Gate Current (T A = 25 °C, PW ≤ 1 µs) IGFM 1 A Reverse Peak Gate Voltage (T A = 25 °C PW ≤ 1 µs) VGRM 5 V Operating Junction Temperature Range at Rated V RRM and VDRM Tj - 40 to + 125 °C Storage Temperature Range T stg - 40 to + 150 °C 1) VDRM and VRRM for types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. Characteristics at Ta = 25 OC, RGK = 1 KΩ unless otherwise noted. Parameter Symbol Min. Max. Unit Peak Forward or Reverse Blocking Current a t VAK = Rated VDRM or VRRM IDRM, IRRM - 10 µA Peak Forward On-State Voltage a t ITM = 1 A Peak, TA = 25 °C VTM - 1.7 V Gate Trigger Current (Continuous dc) 1) at Anode Voltage = 7 Vdc, R L=100 Ω) IGT - 200 µA Gate Trigger Voltage (Continuous dc) at Anode Voltage = 7 Vdc, RL = 100 Ω) at Anode Voltage = Rated VDRM, RL = 100 Ω) VGT - 0.8 V H o l d i n g C u r r e n t at Anode Voltage = 7 Vdc, initiating current = 20 mA) IH - 5 mA 1 ) RGK current is not included in measurement. 1. Cathode 2. Gate 3. Anode TO-92 Plastic PackageK G A