MCL80G SEMTECH_ELEC | Alldatasheet

Document overview

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Technical content

Features

  • High speed
  • High reliability
  • Fits onto SOD 323 / SOT 23 footprints
  • Micro Melf package

Applications

Ultra high speed switching Absolute Maximum Ratings (T a = 25OC) Parameter Symbol Value Unit Peak Reverse Voltage V RM 80 V DC Reverse Voltage V R 80 V Peak Forward Current I FM 300 mA Mean Rectifying Current I O 100 mA Surge Current(1μS) I surge 4 A Power Dissipation P tot 200 mW Junction Temperature T j 150 OC Storage Temperature Range T s -55 … +150 OC LS-31

Dated : 09/04/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MCL80G Characteristics at T a = 25 OC Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage I F = 100mA V F - - 1.2 V Reverse Current V R = 70V I R - - 0.1 μA Diode Capacitance V R = 6V, f = 1MHZ C D - - 3.5 pF Reverse Recovery Time I F = 5mA, VR = 6V t rr - - 4 ns

Dated : 09/04/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MCL80G 150 Ta-Ambient Temperature- C Power Dissipation - Pd/Pd m ax(% 02 5 1 0 0 50 75 125 o Power Attenuation Curve 100 125 Forward Voltage-V Forward Characteristics 0.1 0.2 0.5 25 C 0 C -30 C 50 C Ta=85 C -1.6-1.4-1.2 Forward Current-m A REVERSE CHARACTERISTICS REVERSE VOLTAGE,V 0.01 01 0 0.1 100 1000 4020 30 50 -25 Co Ta=100 C 75 C 0 C 25 C o o 50 Co o o REVERSE CURRENT, nA Reverse Voltage ( V ) 4 8 1612 20 Capacitance f=1MHz Capacitance (pF) Reverse Recovery Time Forward Current ( mA ) VR=6V Reverse Recovery Tim e (ns) 4 6 108 OUTPUT PULSE GENERATOR OUTPUT IR trr 0.1 IR

5 SAMPLING

DUT0.01 F 100ns INPUT