MCH6602_07 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.5V drive.
  • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 0.35 A Drain Current (Pulse) IDP PW≤ 10µs, duty cycle≤1% 1.4 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current IDSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current IGSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage VGS (off) V DS =10V, ID =100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =80mA 0.15 0.22 S R DS (on)1 I D =80mA, VGS =4V 2.9 3.7 Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =40mA, VGS =2.5V 3.7 5.2 Ω R DS (on)3 I D =10mA, VGS =1.5V 6.4 12.8 Ω Input Capacitance Ciss V DS =10V, f=1MHz 7.0 pF Output Capacitance Coss V DS =10V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 2.3 pF Marking : FB Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

12407 TI IM TC-00000415 / 70306 / 42806PE MS IM TB-00002288 / 30300 TS (KOTO) TA-2509

General-Purpose Switching Device

Applications

No.6445-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-ON Delay Time t d(on) See specified Test Circuit. 19 ns Rise Time t r See specified Test Circuit. 65 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 155 ns Fall Time t f See specified Test Circuit. 120 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =150mA 1.58 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =150mA 0.26 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =150mA 0.31 nC Diode Forward Voltage V SD IS=150mA, VGS =0V 0.87 1.2 V Package Dimensions Electrical Connection unit : mm 7022A-006 Switching Time Test Circuit 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 PW=10 µs D.C.≤1% VIN VIN P.G 50Ω G S ID =80mA R L=187.5Ω VDD =15V VOUTD MCH6602 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 654 123

No.6445-3/5 R DS (on) -- IDR DS (on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A R DS (on) -- Ta yfs -- ID R DS (on) -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Drain Current, ID -- A R DS (on) -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Drain Current, ID -- A Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Forward Transfer Admittance, yfs -- S --60 --40 --20 02 0 40 60 80 100 120 140 160 ID=40mA, V GS=2.5V ID=80mA, V GS=4.0V 0.01 0.01 0.1 23 5 7 23 5 0.1 1.0 V DS =10V 75°C Ta= --25°C IT00035 IT00036 0.01 0.1 23 5 7 23 5 1.0 V GS =2.5V 1.0 0.001 0.01 23 5 7 23 5 100 V GS =1.5V Ta=75°C 25°C --25°C --25°C 25°C Ta=75°C IT00033 IT00034 25°C 789 1 0 Ta=25°C 0.01 0.1 23 5 7 23 5 1.0 25°C --25°C Ta=75°C IT00031 IT00032 V GS =4V ID =40mA 80mA ID -- VDS ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V Drain Current, ID -- A 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 V GS =1.5V 2.0V 2.5V 4.0V 3.5V 3.0V 6.0V 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 V DS =10V Ta= --25 IT00029 IT00030

No.6445-4/5 1.0 0.1 0.01 02 0 4 06 0 100 120 140 1.0 0.6 0.4 0.2 0.8 160 IT01118 23 5 7 23 51.0 10 IT01117 ID =0.35A IDP =1.4A 100ms DC operation 10ms 1ms PW ≤10µs Operation in this area is limited by RDS (on). 02468 1 0 1 2 1 41 61 82 0 1.0 100 Ciss Coss Crss f=1MHz V DS =10V ID =150mA IT00039 IT00040 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V PD -- TaA S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm 2✕0.8mm) 1unit Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 2✕0.8mm) 1unit Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF SW Time -- ID Drain Current, ID -- A Switching Time, SW Time -- ns IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A 0.01 0.1 1.0 V GS =0V --25 °C 25 Ta=75 0.01 0.123 5 7 2 1000 100 V DD =15V V GS =4V td(on) tr tf td(off) IT00037 IT00038

No.6445-5/5 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice.