MCH6602 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON resistance.
  • Ultrahigh-speed swithcing.
  • 2.5V drive.
  • Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Mounted on a ceramic board (900mm2·0.8mm) 1unit Marking : FB Continued on next page. retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03V egatloVecruoS-ot-etaGV SSG 01±V )CD(tnerruCniarDI D 53.0A )eslup(tnerruCniarDI PD WP £ elcycytud,sµ01 £ %14 .1A noitapissiDrewoPelbawollAP D 8.0W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 3V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03= SG 0=0 1A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V8±= SD 0=0 1±A µ egatloVffotuCV SG )ffo(V SD I,V01= D Aµ001=4 .03 .1V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D Am08=5 1.02 2.0S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R SD 1)no(I D V,Am08= SG V4=9 .27 .3 W R SD 2)no(I D V,Am04= SG V5.2=7 .32 .5 W R SD 3)no(I D V,Am01= SG V5.1=4 .68 .21 W

No.6445-2/4 MCH6602 Electrical Connection Switching Time Test Circuit Continued from preceding page. PW=10 ms D.C.≤1% VIN VIN P. G 50W G S ID =80mA R L=187.5W VDD =15V VOUTD MCH6602 D1 G2 S2 S1 G1 D2 (Top view) retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am ecnaticapaCtupnIs siCV SD zHM1=f,V01=0 .7F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=9 .5F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=3 .2F p emiTyaleDNO-nruTt d )no(t iucriCtseTdeificepseeS9 1s n emiTesiRt r tiucriCtseTdeificepseeS5 6s n emiTyaleDFFO-nruTt d )ffo(t iucriCtseTdeificepseeS5 51s n emiTllaFt f tiucriCtseTdeificepseeS0 21s n egrahCetaGlatoTg QV SD V,V01= SG I,V01= D Am051=8 5.1C n egrahCecruoS-ot-etaGs gQV SD V,V01= SG I,V01= D Am051=6 2.0C n egrahC"relliM"niarD-ot-etaGd gQV SD V,V01= SG I,V01= D Am051=1 3.0C n egatloVdrawroFedoiDV DS IS V,Am051= SG 0=7 8.02 .1V 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 ID -- VDS V GS =1.5V 2.0V 2.5V 4.0V 3.5V 3.0V 6.0V 789 1 0 R DS (on) -- VGS Ta=25°C 0.01 0.1 23 5 7 23 5 1.0 R DS (on) -- ID 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 ID -- VGS V DS =10V Ta=--25 25°C --25°C Ta=75°C IT00029 IT00030 IT00031 IT00032 V GS =4V ID =40mA 80mA Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS (on) – W Static Drain-to-Source On-State Resistance, RDS (on) – W Drain Current, ID –A

No.6445-3/4 MCH6602 0.01 0.1 1.0 V GS =0 IF -- VSD --25 °C 25 Ta=75 0 2 4 6 8 10 12 14 16 18 20 1.0 100 Ciss Coss Crss f=1MHz Ciss, Coss, Crss -- VDS VGS -- Qg V DS =10V ID =150mA 0.01 0.123 5 7 2 1000 100 SW Time -- ID V DD =15V V GS =4V td(on) tr tf td(off) IT00037 IT00038 IT00039 IT00040 --60 --40 --20 02 0 40 60 80 100 120 140 160 R DS (on) -- Ta ID=40mA, V GS=2.5V ID=80mA, V GS=4.0V 0.01 0.01 0.1 23 5 7 23 5 0.1 1.0 V DS =10V ‰yfs‰ -- ID 75°C Ta=--25 IT00035 IT00036 0.01 0.1 23 5 7 23 5 1.0 R DS (on) -- ID V GS =2.5V 1.0 0.001 0.01 23 5 7 23 5 100 R DS (on) -- ID V GS =1.5V Ta=75°C 25°C --25°C --25°C 25°C Ta=75°C IT00033 IT00034 25°C Static Drain-to-Source On-State Resistance, RDS (on) – W Static Drain-to-Source On-State Resistance, RDS (on) – W Drain Current, ID –A Static Drain-to-Source On-State Resistance, RDS (on) – W Drain Current, ID –A Ambient Temperature, Ta – ˚C Forward Transfer Admittance, |yf s|–S Drain Current, ID –A Diode Forward Voltage, VSD –V Forward Current, IF –A Switching Time, SW Time – ns Drain Current, ID –A Ciss, Coss, Crss – pF Drain-to-Source Voltage, VDS –V Gate-to-Source Voltage, VGS – V Total Gate Charge, Qg – nC

PS No.6445-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. MCH6602 1.0 0.1 0.01 0 20 40 60 100 120 140 1.0 0.6 0.4 0.2 0.8 160 PD -- Ta IT01118 A S O 23 5 7 23 51.0 10 IT01117 ID =0.35A IDP =1.4A 100ms DC operation 10ms 1ms 100ms Operation in this area is limited by RDS (on). Drain Current,ID –A Drain-to-Source Voltage, VDS –V Ta=25°C Single pulse 1unit Mounted on a ceramic board (900mm2·0.8mm) Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C Mounted on a ceramic board (900mm 2·0.8mm) 1unit