MCH6545

MCH6545 SANYO | Alldatasheet

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Technical content

Features

• Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
• Ultrasmall package allows applied sets to be made small and thin. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -50)60 V Collector-to-Emitter Voltage VCEO (- -)50 V Emitter-to-Base Voltage VEBO (- -)5 V Collector Current IC (- -)500 mA Collector Current (Pulse) ICP (- -)1.0 A Collector Dissipation PC Mounted on a ceramic board (600mm25 0.8m) 0.5 W Total Power Dissipation PT Mounted on a ceramic board (600mm25 0.8m) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =(- -)40V, IE=0A (- -)100 nA Emitter Cutoff Current IEBO VEB =(- -)4V, IC =0A (- -)100 nA DC Current Gain hFE VCE =(- -)2V, IC =(- -)10mA (200)300 (500)700 Gain-Bandwidth Product fT VCE =(- -)10V, IC =(- -)50mA (690)500 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (3.8)2.8 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)100mA, IB=(- -)10mA (- -60)50 (- -120)100 mV Base-to-Emitter Saturation Voltage VBE (sat) I C =(- -)100mA, IB=(- -)10mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -50)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0A (- -)5 V Marking : ET Continued on next page. 72606 / 32406EA MS IM TB-00002174 MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network

No.8953-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-On Time t on See specified Test Circuit. (30)30 ns Storage Time t stg See specified Test Circuit. (170)340 ns Fall Time t f See specified Test Circuit. (30)55 ns Package Dimensions Electrical Connection unit : mm 7022A-011 Switching Time Test Circuit 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Top view 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA --100 --50 IC -- VCE IT05118 --200 --150 --300 --250 --500 --450 --400 --350 IB =0µA --200µA --1mA --500µA --2mA --5mA --10mA --15mA --50mA --30mA --20mA--25mA --40mA [PNP] [NPN] IC -- VCE IT05106Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA 350 400 300 200 250 500 450 200 150 100 500 1000 800 900100 300 400 600 700 IB =0µA 200µA 600µA 1mA 2mA 3mA 5mA 7mA 8mA 30mA 20mA 15mA 10mA VR R B VCC =25VVBE = --5V 50Ω INPUT OUTPUT R L 220µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =20IB1 = --20IB2 =200mA For PNP, the polarity is reversed.

No.8953-3/5 IT05123 VCE (sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7--100 --1000 --1000 --100 --10 Ta=75 --25 25°C IC / IB =20 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE IT05119 IC -- VBE --200 --600 --500 --400 --300 --100 Ta=75 --25 V CE = --2V IT05120 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7--100 --1000 1000 Ta=75°C 25°C --25°C V CE = --2V IT05410 --1.0 23 5 7 --10 23 5 7 23 5 7--100 --100 --10 Ta=75 --25 °C25°C IC / IB =10 VCE (sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV [PNP] [PNP] [PNP] [PNP] hFE -- IC IT05108 IC -- VBE IT05107Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE 1.0 10 100 1000325 7 3 25 7 3 25 7 1000 100 200 300 600 500 400 100 Ta=75 --25 V CE =2V V CE =2VTa=75°C 25°C --25°C IT05411 1.0 23 5 10 10072 3 5 7 100023 5 7 100 --25 °C25°C Ta=75 IC / IB =10 VCE (sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV VCE (sat) -- IC IT05109Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV 1.0 23 5 10 10072 3 5 7 100023 5 7 100 --25 25°C Ta=75 IC / IB =20 [NPN] [NPN] [NPN] [NPN]

No.8953-4/5 Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- mA Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mVBase-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz IT05122 --1.0 1.0 Cob -- VCB --102 3 5 7 2 3 5 7 --100 f=1MHz IT05124 VCE (sat) -- IC IT05125 VBE (sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7--100 --1000 --1000 --100 --10 IC / IB =50 Ta=75 --25°C 25°C --1.0 --1.0 23 5 7 --10 23 5 7 23 5 7--100 --1000 Ta= --25°C 75°C 25°C IC / IB =20 IT05121 --1.0 fT -- IC 23 5 7 23 5 7 23 5 7--10 --100 --1000 100 1000 V CE = --10V [PNP] [PNP] [PNP] [PNP] fT -- IC IT05113 Cob -- VCB IT05112 VCE (sat) -- IC IT05110 Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV Collector Current, IC -- mA Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz IT05111 VBE (sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- V 1.0 53 100 1000 100010027 5 327 5 32710 27 35 2 7 3510 1001.0 1.0 1.0 23 535 7 1027 2 3 5 7 100 1000 1.0 0.1 75°C Ta= --25°C25°C IC / IB =20 f=1MHz V CE =10V IT05110 1000 100 1.0 23 5 10 1007 23 5 7 23 5 7 1000 IC / IB =50 --25 25°C Ta=75 [NPN] [NPN] [NPN] [NPN]

No.8953-5/5PS 0.6 0.1 0.2 0.3 0.4 0.5 0.55 0 20 40 60 80 100 120 140 160 IT10744 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 1unit Mounted on a ceramic board (600mm25 0.8mm) Total dissipation f=1MHz --0.1 0.1 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω IT06093 1.0 100 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB [PNP] [PNP/NPN] Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06092 1.0 100 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB [NPN] This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.