MCH6544

MCH6544 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• Composite type with an NPN transistor contained in one package facilitating high-density mounting.
• Ultrasmall package facilitates miniaturization in end products. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 60 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 500 mA Collector Current (Pulse) I CP 1.5 A Collector Dissipation P C When mounted on ceramic substrate (600mm2✕0.8mm) 1unit 0.5 W Total Power Dissipation P T When mounted on ceramic substrate (600mm2✕0.8mm) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=40V, IE=0A 100 nA Emitter Cutoff Current I EBO VEB=4V, IC=0A 100 nA DC Current Gain h FE VCE=2V, IC=10mA 300 800 Gain-Bandwidth Product f T VCE=10V, IC=50mA 500 MHz Output Capacitance Cob V CB=10V, f=1MHz 2.8 pF Marking : ES Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SANYO Semiconductors DATA SHEET Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 51408EA TI IM TC-00001383 MCH6544 NPN Epitaxial Planar Silicon Transistor Inverter Circuit / Driver Applications

No.8952-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage V CE(sat) I C=100mA, IB=10mA 50 100 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=100mA, IB=10mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 60 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 5 V Turm-ON Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 340 ns Fall Time t f See specified Test Circuit. 55 ns Package Dimensions Electrical Connection unit : mm (typ) 7022A-011 Switching Time Test Circuit 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Top view VR RB VCC=25VVBE= --5V 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=200mA 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3

No.8952-3/4 hFE -- IC IT05108 IC -- VCE IT05106 IC -- VBE IT05107Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE 1.0 10 100 1000325 7 3 25 7 3 25 7 1000 100 350 400 300 200 250 500 450 200 150 100 200 300 600 500 400 100 Ta=75 --25 VCE=2V VCE=2V IB=0μA 200μA 600μA 1mA 2mA 3mA 5mA 7mA 8mA 30mA 20mA 15mA 10mA Ta=75°C 25°C --25°C IT05411 1.0 23 5 10 10072 3 5 7 100023 5 7 100 --25 °C25°C Ta=75 IC / IB=10 VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Cob -- VCB IT05112 VCE(sat) -- IC IT05110 Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- VIT05111 VBE(sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V 27 35 2 7 3510 1001.0 1.0 1.0 23 535 7 1027 2 3 5 7 100 1000 1.0 0.1 75°C Ta= --25°C 25°C IC / IB=20 f=1MHz IT05110 1000 100 1.0 23 5 10 1007 23 5 7 23 5 7 1000 IC / IB=50 --25 25°C Ta=75 VCE(sat) -- IC IT05109Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 1.0 23 5 10 10072 3 5 7 100023 5 7 100 --25 25°C Ta=75 IC / IB=20

No.8952-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS fT -- IC IT05113Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz 1.0 53 100 1000 100010027 5 327 5 32710 VCE=10V Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06092 1.0 100 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB 0.6 0.1 0.2 0.3 0.4 0.5 0.55 0 20 40 60 80 100 120 140 160 IT10744 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 1unit Total dissipation When mounted on ceramic substrate (600mm2✕0.8mm) This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice.