MCH6542

MCH6542 SANYO | Alldatasheet

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Features

• Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
• Ultrasmall package permitting applied sets to be small and slim. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)300 mA Collector Current (Pulse) ICP (--)900 mA Collector Dissipation PC Mounted on a ceramic board (600mm2✕0.8m) 1unit 0.5 W Total Power Dissipation P T Mounted on a ceramic board (600mm2✕0.8m) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =(- -)30V, IE=0A (- -)100 nA Emitter Cutoff Current IEBO VEB =(- -)4V, IC =0A (- -)100 nA DC Current Gain hFE VCE =(- -)2V, IC =(- -)10mA (200)300 (500)800 Gain-Bandwidth Product fT VCE =(- -)10V, IC =(- -)50mA (520)380 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (3)2.4 pF Marking : EQ Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SANYO Semiconductors DATA SHEET Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 22807EA TI IM TC-00000538 MCH6542 PNP / NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN http://semicon.sanyo.com/en/network

No.8950-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)100mA, IB=(- -)5mA (--110)100 (- -220)200 mV Base-to-Emitter Saturation Voltage VBE (sat) I C =(- -)100mA, IB=(- -)5mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (--)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0A (- -)5 V Turn-On Time ton See specified Test Circuit. (39)42 ns Storage Time tstg See specified Test Circuit. (200)135 ns Fall Time tf See specified Test Circuit. (48)90 ns Package Dimensions Electrical Connection unit : mm (typ) 7022A-012 Switching Time Test Circuit [PNP] [NPN] 5 6 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) Top view 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 VR R B VCC = --12VVBE =5V ++50Ω INPUT OUTPUT R L 220µF 470µF PW=20µs IB1 D.C.≤1% IB2 IC =20IB1 = --20IB2 = --100mA VR R B VCC =12VVBE = --5V + + 50Ω INPUT OUTPUT R L 220µF 470µF PW=20µs IB1 D.C.≤1% IB2 IC =20IB1 = --20IB2 =300mA

No.8950-3/5 --100 --200 --300 --400 --50 --150 --250 --350 --20 --40 --60 --80 --100 --120 --140 --160 --180 --200 IC -- VCE IT04096 IT04098 IT04097 IT04099 IC -- VBE hFE -- IC 23 5 7--1.0 --10 23 5 7 --100 23 5 7 --1000 100 1000 --10 23 5 7--1.0 --10 23 5 7 --100 23 5 7 --1000 --100 --1000 VCE (sat) -- IC IB =0mA --0.2mA --0.4mA --0.6mA --0.8mA --1.0mA --2.0mA IC / IB =20 V CE = --2V [PNP] [PNP] [PNP] [PNP] Ta=75°C 25°C --25°C Ta=75°C --25°C --1.8mA --1.6mA --1.4mA --1.2mA 25°C Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV V CE = --2V Ta=75 --25 200 0.4 0.6 0.80.2 100 120 140 160 180 IT05501 IB =0mA 0.2mA 0.4mA 0.6mA1.0mA1.2mA 1.6mA 1.4mA 1.8mA 2.0mA 0.8mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA [NPN] 100 400 200 150 250 350 300 IT11482 V CE =2V --25 Ta=75°C IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA [NPN] 1.0 23 5 7 23 57 2 3 5710 100 100 1000 1000 IT11483 V CE =2V --25°C Ta=75°C 25°C hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE [NPN] 100 1000 IT11484 1.0 23 5 7 23 5 7 23 5 710 100 1000 IC / IB =20 Ta=75 25°C --25 VCE (sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- mV [NPN]

No.8950-4/5 1.0 5 3 100 100010027 5 327 5 32710 IT11487 IT11486 1.0 35 7 1023 5 723 5 72100 1000 10000 1000 100 Ta= --25°C 25°C 75°C IC / IB =20 V CE =10V 101.027 35 2 7 35 2 350.1 1.0 IT05507 f=1MHz fT -- IC Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V VBE (sat) -- IC Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- mV Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz [NPN] [NPN] [NPN] [NPN] f=1MHz 0.1 0.1 IT06065 1.0 100 3 2 57 3 2 571.0 10 OUTIN 1kΩ 1kΩ IB Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω [PNP] IT04100 VBE (sat) -- IC 23 5 7--1.0 --10 23 5 7 --100 23 5 7 --1000 --1000 IC / IB =20 Ta= --25°C 75°C 25°C Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE (sat) -- mV [PNP] IT04101 23 5 7--1.0 --10 23 5 7 --100 23 5 7 --1000 100 1000 fT -- IC V CE = --10V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz [PNP] IT04102 1.0 Cob -- VCB 23 5 7--0.1 --1.0 23 5 7 --10 23 5 7 --100 f=1MHz Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V [PNP] f=1MHz --0.1 0.1 Ron -- IB IT06066 1.0 100 3 2 57 3 2 57--1.0 --10 OUTIN 1kΩ 1kΩ IB Base Current, IB -- mA ON Resistance, Ron -- Ω

No.8950-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. 0.6 0.1 0.2 0.3 0.4 0.5 0.55 02 0 4 0 6 08 0 100 120 140 160 IT10744 PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W 1unit Mounted on a ceramic board (600mm2✕0.8mm) Total dissipation [PNP/NPN]