MCH6541

MCH6541 SANYO | Alldatasheet

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Features

• Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
• Ultrasmall package permitting applied sets to be small and slim. Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)700 mA Collector Current (Pulse) I CP (- -)3 A Collector Dissipation P C When mounted on ceramic substrate (600mm2✕0.8mm) 1unit 0.5 W Total Power Dissipation P T When mounted on ceramic substrate (600mm2✕0.8mm) 0.55 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=(- -)30V, IE=0A (- -)100 nA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain h FE VCE=(- -)2V, IC=(- -10)50mA (200)300 (500)800 Gain-Bandwidth Product f T VCE=(- -)2V, IC=(- -)50mA (520)540 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (4.7)3.3 pF Marking : EP Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SANYO Semiconductors DATA SHEET Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 22008EA TI IM TC-00001087 MCH6541 PNP / NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications

No.8949-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)200mA, IB=(- -)10mA (- -110)85 (- -220)190 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)200mA, IB=(- -)10mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-On Time t on See specified Test Circuit. 35 ns Storage Time t stg See specified Test Circuit. (125)255 ns Fall Time t f See specified Test Circuit. (25)40 ns Package Dimensions Electrical Connection unit : mm (typ) 7022A-012 Switching Time Test Circuit 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) Top view 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 VR RB VCC=12VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=300mA For PNP, the polarity is reversed.

No.8949-3/5 [PNP] [NPN] --200 --100 IC -- VCE IT05049 --400 --300 --600 --500 --700 IB=0μA --500μA --1mA --2mA --5mA --3mA --7mA --10mA --15mA--40mA --50mA --30mA --20mA--25mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA 500 400 300 700 600 200 200 100 500 1000 800 900100 300 400 600 700 IC -- VCE IT05082 IB=0μA 200μA 400μA 1mA 2mA 3mA 5mA 7mA10mA 50mA 15mA 30mA 20mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA [PNP] [NPN] [PNP] [NPN] IT05051 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7--100 --1000 1000 VCE= --2V Ta=75°C 25°C --25°C IT05054 --1.0 VCE(sat) -- IC 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --1000 --100 --10 Ta=75 --25 25°C IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 1.0 10 100 100032 57 3 2 57 3 2 57 1000 100 hFE -- IC IT05084 VCE(sat) -- IC IT05085 Ta=75°C --25°C 25°C VCE=2V 1.0 100 1000 1.0 23 5 10 100 10007 2 35 7 2 35 7 75°C --25 °CTa=25°C IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV [PNP] [NPN] IT05050 IC -- VBE --200 --800 --500 --700 --400 --300 --600 --100 Ta=75 --25 VCE= --2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA 300 400 200 800 700 600 500 100 IC -- VBE IT05083 Ta=75 --25 VCE=2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA

No.8949-4/5 [PNP] [NPN] IT05055 VCE(sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --10 --1000 --100 Ta=75 --25°C 25°C IC / IB=50 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VCE(sat) -- IC IT05086 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=50 75°C --25°CTa= 25°C Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA [PNP] [NPN] [PNP] [NPN] IT05053 --1.0 0.1 Cob -- VCB --102 3 5 7 2 3 5 f=1MHz IT05052 --1.0 fT -- IC 23 5 7 23 5 7 23 5 7--10 --100 --1000 100 1000 VCE= --10V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF IT05089 fT -- IC 100 1000 101.0 10023 5 723 5 7 100023 5 7 VCE=10V Cob -- VCB IT05088 1.0 1.0 10 23 5 23 5 7 f=1MHz Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz [PNP] [NPN] --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 IT05056 VBE(sat) -- IC --1.0 --10 --0.1 Ta= --25°C 75°C 25°C IC / IB=20 Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC IT05087 1.0 0.1 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=20 75°C Ta= --25°C 25°C Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V

No.8949-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. [PNP] [NPN] f=1MHz --0.1 0.1 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω IT06403 1.0 100 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06793 1.0 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB 0.6 0.1 0.2 0.3 0.4 0.5 0.55 0 20 40 60 80 100 120 140 160 IT10744 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 1unit Total dissipation [PNP/NPN] When mounted on ceramic substrate (600mm2✕0.8mm) This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice.