MCH6448_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance R DS(on)1=17mΩ (typ.)
  • 1.2V drive
  • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS ±9 V Drain Current (DC) I D 8A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 32 A Allowable Power Dissipation P D When mounted on ceramic substrate (1200mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7022A-009

62712 TKIM/20112PE TKIM TC-00002664

Low-Voltage Driver Switching Device Applications http://semicon.sanyo.com/en/network Product & Package Information

  • Package : MCPH6
  • JEITA, JEDEC : SC-88, SC-70-6, SOT-363
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 TL SANYO Semiconductors DATA SHEET MCH6448-TL-H ZX LOT No. LOT No. 1, 2, 5, 6

No. A2004-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current I DSS VDS=20V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±7.2V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.3 1.0 V Forward Transfer Admittance | yfs | VDS=10V, ID=4A 7.7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=4A, VGS=4.5V 17 22 mΩ RDS(on)2 I D=2A, VGS=2.5V 20 28 mΩ RDS(on)3 I D=1A, VGS=1.8V 26 39 mΩ RDS(on)4 I D=0.5A, VGS=1.2V 62 124 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 705 pF Output Capacitance Coss 150 pF Reverse Transfer Capacitance Crss 125 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit 6n s Rise Time tr 47 ns Turn-OFF Delay Time td(off) 103 ns Fall Time tf 81 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=8A 11.2 nC Gate-to-Source Charge Qgs 1.3 nC Gate-to-Drain “Miller” Charge Qgd 2.8 nC Diode Forward Voltage VSD IS=8A, VGS=0V 0.8 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo MCH6448-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=4A RL=2.5Ω VDD=10V VOUT VIN 4.5V VIN MCH6448

No. A2004-3/7 ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT16738 IT16739 VDS=10V --25 Ta=75 VGS=0.9V 1.8V 4.5V 3.0V 1.2V 7.0V 1.0V 2.5V Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V IS -- VSD --60 --40 --20 0 20 40 60 80 100 120 140 160 120 100 VGS=1.2V , ID=0.5A VGS=4.5V, ID=4.0A VGS=1.8V , ID=1.0A IT16740 Ta=25°C IT16741 ID=0.5A 4.0A 02 13 7 654 100 120 IT16742 IT16743 1.0 100 1.0 10 70.1 23 5 7 23 5 Ta= --25 VDS=10V 0.001 VGS=0V 0.1 1.0 23 5 7 10023 5 71023 5 7 VDD=10V VGS=4.5V td(on) td(off) tf IT16744 1000 10000 100 2010 15 Ciss Coss Crss IT16745 100 1000 1.0 Ta=75 --25 f=1MHz tr 75°C 25°C 0.0175 0.1 1.0 100 1.0A 2.0A VGS=2.5V , ID=2.0A

No. A2004-4/7 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 01 2 1110987653421 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 IT16746 VDS=10V ID=8A 0.01 0.1 1.0 0.001 23 5 723 5 70.1 1.0 23 5 710 100 IT16747 10ms 100ms Operation in this area is limited by RDS(on). ID=8A DC operation IDP=32A (PW≤10μs) 1ms 57100 100μs Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT16748 20 40 60 80 100 140 120 1.6 1.4 1.5 1.2 1.0 0.8 0.6 0.2 0.4 160 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm)

No. A2004-5/7 Taping Specifi cation MCH6448-TL-H

No. A2004-6/7 Outline Drawing Land Pattern Example MCH6448-TL-H Mass (g) Unit 0.008 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No. A2004-7/7 This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.