MCH6445

MCH6445 SANYO | Alldatasheet

Document overview

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Technical content

Features

• 4V drive.
• Low ON-resistance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 4A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 16 A Allowable Power Dissipation P D When mounted on ceramic substrate (1500mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current I DSS V DS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=2A 3 S Marking : ZU Continued on next page. D2409PE TK IM TC-00002219 SANYO Semiconductors DATA SHEET MCH6445 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1566-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Static Drain-to-Source On-State Resistance RDS(on)1 I D=2A, VGS=10V 60 78 m Ω RDS(on)2 I D=1A, VGS=4.5V 74 104 m Ω RDS(on)3 I D=1A, VGS=4V 81 114 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 505 pF Output Capacitance Coss V DS=20V, f=1MHz 57 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 37 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 7.3 ns Rise Time tr See speci fi ed Test Circuit. 9.8 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 40 ns Fall Time tf See specifi ed Test Circuit. 24 ns Total Gate Charge Qg V DS=30V, VGS=10V, ID=4A 10 nC Gate-to-Source Charge Qgs V DS=30V, VGS=10V, ID=4A 1.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=30V, VGS=10V, ID=4A 2.1 nC Diode Forward Voltage VSD IS=4A, VGS=0V 0.82 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7022A-009 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 PW=10μs D.C.≤1% 10V VIN P. G 50Ω G S ID=2A RL=15Ω VDD=30V VOUTVIN D MCH6445 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 2.0 3.0 5.5 6.0 1.0 1.5 4.0 2.5 3.5 0.5 4.5 5.0 1.0 2.0 4.0 4.5 0.20.1 3.0 1.5 0.5 2.5 3.5 IT13789 IT13790 Ta=75 --25 4.0V 3.5V 3.0V VDS=10V 15.0V 10.0V 4.5V VGS=2.5V 7.0V

No. A1566-3/4 IT15073 0.1 1.0 23 5 23 5 7 72 0.01 0.1 1.0 IDP=16A ID=4A PW≤10μs 100 μs DC operation (Ta=25 °C) 1ms 100ms 10ms Operation in this area is limited by RDS(on). 10 10035 7 VGS -- Qg SW Time -- ID Ciss, Coss, Crss -- VDS IS -- VSD| yfs | -- ID Drain Current, ID -- A Switching Time, SW Time -- ns Forward Transfer Admittance, | yfs | -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V 04 7 9 623 518 1 0 IT13797 IT13795 IT13793 0.1 1.0 23 5 7 23 5 7 02 0 4 0 10 30 50 60 100 1000 IT13796 IT13794 0.01 0.1 1.0 VGS=0V --25 Ta=75 td(on) td(off) tf tr VDD=30V VGS=10V Ciss Coss Crss f=1MHz VDS=30V ID=4A 0.01 0.1 0.127 35 2 1027 351.0735 1.0 VDS=10V 75°CTa= --25 25°C IT13792 - -60 120 140 100 130 150 110 160 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS =4.5V , I D=1A VGS =10.0V , I D=2AVGS =4.0V , I D=1A 048 1 2 1 42 6 10 16 IT13791 170 130 110 100 140 120 160 150 Ta=25°C ID=1A A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm)

No. A1566-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of December 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the MCH6445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 0.2 1.2 1.6 1.5 1.4 1.0 0.8 0.6 0.4 1.8 0 20 40 60 80 100 120 140 160 IT15074 When mounted on ceramic substrate (1500mm2×0.8mm)