MCH6444 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance R DS(on)1=75mΩ (typ.)
  • 4V drive
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 35 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 2.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 10 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7022A-009 62911PE TKIM TC-00002620 SANYO Semiconductors DATA SHEET MCH6444 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : MCPH6
  • JEITA, JEDEC : SC-88, SOT-363
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection ZT LOT No. LOT No. TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 1, 2, 5, 6

No.8935-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 35 V Zero-Gate Voltage Drain Current I DSS VDS=35V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 1.7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=1.5A, VGS=10V 75 98 mΩ RDS(on)2 I D=0.75A, VGS=4.5V 118 166 mΩ RDS(on)3 I D=0.75A, VGS=4V 143 201 mΩ Input Capacitance Ciss V DS=20V, f=1MHz 186 pF Output Capacitance Coss V DS=20V, f=1MHz 36 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 22 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 4.2 ns Rise Time tr See speci fi ed Test Circuit. 4.7 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 15 ns Fall Time tf See specifi ed Test Circuit. 5.7 ns Total Gate Charge Qg V DS=20V, VGS=10V, ID=2.5A 4 nC Gate-to-Source Charge Qgs V DS=20V, VGS=10V, ID=2.5A 0.9 nC Gate-to-Drain “Miller” Charge Qgd V DS=20V, VGS=10V, ID=2.5A 0.7 nC Diode Forward Voltage VSD IS=2.5A, VGS=0V 0.86 1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% P. G 50Ω G S D ID=1.5A RL=10Ω VDD=15V VOUT VIN 10V VIN MCH6444 ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A 0.5 1.0 2.0 1.5 2.5 IT16513 IT16514 VDS=10V --25 Ta=75 VGS=2.5V 4.5V 10.0V 6.0V 3.5V16.0V 3.0V 4.0V

No.8935-3/4 Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V --60 --40 --20 0 20 40 60 80 100 120 140 160 150 100 300 250 200 VGS=4V , ID=0.75A VGS=10V , ID=1.5A VGS=4.5V , ID=0.75A IT16515 Ta=25°C IT16516 ID=0.75A 1.5A 06 428 1 6 141210 250 150 100 200 300 IT16521 IT16517 IT16518 0.1 1.0 0.1 1.0 23 5 7 1070.01 23 5 7 23 5 Ta= --25 VDS=10V 0.01 VGS=0V 100 1000 3510 15 20 25 30 Ciss Coss Crss IT16520 Ta=75 --25 f=1MHz 75°C 25°C 0.1 1.0 VDS=20V ID=2.5A A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 0.1 1.0 0.01 23 5 723 5 723 5 70.01 0.1 1.0 23 5 710 100 IT16511 10ms100ms Operation in this area is limited by RDS(on). ID=2.5A DC operation ( Ta=25 °C) IDP=10A (PW≤10μs) 1ms 100 100 μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) IS -- VSD 0.1 1.0 23 5 7 1023 5 7 VDD=15V VGS=10V td(on) td(off) tf IT16519 100 1.0 tr

No.8935-4/4PS This catalog provides information as of June, 2011. Specifi cations and information herein are subject to change without notice. Note on usage : Since the MCH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT16512 20 40 60 80 100 140 120 1.0 0.8 0.6 0.2 0.4 160 When mounted on ceramic substrate (900mm2×0.8mm)