MCH6318 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D -- 2 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -8 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -30 V Zero-Gate Voltage Drain Current I DSS VDS =- -30V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -1A 1.2 2.0 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -1A, VGS =- -10V 110 145 m Ω R DS (on)2 I D =- -0.5A, VGS =- -4V 205 290 m Ω Input Capacitance Ciss V DS =- -10V, f=1MHz 200 pF Output Capacitance Coss V DS =- -10V, f=1MHz 47 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 32 pF Turn-ON Delay Time t d(on) See specified Test Circuit 7.2 ns Rise Time t r See specified Test Circuit 2.9 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 21 ns Fall Time t f See specified Test Circuit 8.7 ns Marking : JS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

11205 TS IM TB-00001071

No.7999-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -2A 5.5 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -2A 0.98 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -2A 0.82 nC Diode Forward Voltage V SD IS=- -2A, VGS =0 - -0.85 - -1.5 V Package Dimensions Switching Time Test Circuit unit : mm 2193A 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 0.250.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 123 654 546 (Bottom view) (Top view) PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --1A R L=15Ω VDD = --15V VOUT MCH6318 VIN --10V VIN --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 R DS (on) -- VGS IT03225 --0.4 --0.8 --1.6 --2.0 --0.2 --1.2 100 150 200 250 300 350 400 ID -- VDS V GS = --3.0V --3.5V IT03223 ID -- VGS V DS = --10V --25 Ta=75 IT03224 R DS (on) -- Ta IT03226 100 150 200 250 300 350 400 Ta=25°C --1.0A ID = --0.5A ID = --1.0A, VGS = --10V ID= --0.5A, V GS = --4V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ

No.7999-3/4 --10 --1.0 --0.1 --0.01 --0.1 23 5 7 --1.0--0.0123 5 7 23 5 7 7 --10 23 5 IT07683 IDP = --8A ID = --2A Operation in this area is limited by RDS (on). 100 µs 100ms 1ms 10ms DC operation (Ta=25 °C) 20 40 0.2 0.4 0.6 0.8 1.0 1.2 60 80 100 120 140 160 IT07673 01234 6 5 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 VGS -- Qg V DS = --10V ID = --2A IT03231 PD -- Ta A S O Operation in this area is limited by RDS (on). <10µs 100 1.0 SW Time -- ID V DD = --15V V GS = --10V td(on) td(off) tr tf IT03229 Ciss, Coss, Crss -- VDS IT03227 1.0 0.1 yfs -- ID V DS = --10V 75°C 25°C Ta= --25 IT03228 --0.01 --0.1 --10 --1.0 IF -- VSD V GS =0 --25 Ta=75 100 f=1MHz Ciss Coss Crss IT03230 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ta=25°C Single pulse Mounted on a ceramic board (900mm 25 0.8mm) Mounted on a ceramic board (900mm 250.8mm)

No.7999-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS Note on usage : Since the MCH6318 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.