MCH6123 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High speed switching.
  • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm).
  • High allowable power dissipation. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO -50 V Collector-to-Emitter Voltage V CES -50 V Collector-to-Emitter Voltage V CEO -50 V Emitter-to-Base Voltage V EBO -6 V Collector Current I C -3 A Collector Current (Pulse) I CP -6 A Base Current I B -600 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 1W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Marking : AZ O0808EA TI IM TC-00001609 SANYO Semiconductors DATA SHEET MCH6123 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications www.semiconductor-sanyo.com/network

No. A1291-2/4 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= -40V, IE=0A -1 μA Emitter Cutoff Current I EBO VEB= -4V, IC=0A -1 μA DC Current Gain h FE VCE= -2V, IC= -100mA 200 560 Gain-Bandwidth Product f T VCE= -10V, IC= -500mA 390 MHz Output Capacitance Cob V CB= -10V, f=1MHz 24 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 I C= -1A, IB= -50mA -115 -230 mV VCE(sat)2 I C= -2A, IB= -100mA -240 -650 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= -2A, IB= -100mA -0.88 -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC= -10μA, IE=0A -50 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC= -100μA, RBE=0Ω -50 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC= -1mA, RBE=∞ -50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= -10μA, IC=0A -6 V Turn-On Time t on See specifi ed Test Circuit. 30 ns Storage Time t stg See specifi ed Test Circuit. 230 ns Fall Time t f See specifi ed Test Circuit. 18 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7022A-007 VR RB VCC= --25VVBE=5V --10IB1=10IB2=IC=--1A + + 50Ω INPUT OUTPUT 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 RL --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 IC -- VBE VCE= --2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IC -- VCE --4mA --10mA --8mA --6mA --30mA --20mA--40mA --2mA IT04564 IT04566 --25 Ta=75 Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- VCollector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IB=0mA

No. A1291-3/4 100 1000 hFE -- IC --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 VCE= --2V IT04568 Ta=75°C 25°C --25°C 100 1000 fT -- IC --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 VCE= --10V IT04570 --10 --100 --1000 VCE(sat) -- IC --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 IC / IB=20 IT04574 100 Cob -- VCB --1.0 23 5 7 --10 23 5 7 --100 f=1MHz IT04572 Ta=75 --25°C 25°C Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV --1.0 --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 VBE(sat) -- IC IT04578 Ta= --25°C 75°C --10 --100 --1000 VCE(sat) -- IC --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 IC / IB=50 IC / IB=50 IT04576 Ta=75 --25°C 25°C 25°C Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 20 40 60 80 100 120 1.0 0.8 0.6 0.4 0.2 1.2 140 16 IT13929 Collector Dissipation, PC -- W PC -- Ta Ambient Temperature, Ta -- °C When mounted on ceramic substrate (600mm2×0.8mm) --10 --0.01 --0.1 --1.0 IT13928 --0.01 --0.123 5 7 2 --1023 5 7 2--1.035 7 35 7 IC= --3A ICP= --6A 1ms10ms100ms DC operation (Ta =25 °C) 100 μs 500 μs <10μs Ta=25°C Single pulse When mounted on ceramic substrate (600mm2×0.8mm)

No. A1291-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2008. Specifi cations and information herein are subject to change without notice.