MCH6121 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High speed switching.
  • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm).
  • High allowable power dissipation. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO -15 V Collector-to-Emitter Voltage V CEO -12 V Emitter-to-Base Voltage V EBO -5 V Collector Current I C -3 A Collector Current (Pulse) I CP -5 A Base Current I B -600 mA Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 1W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Marking : AX O0808EA TI IM TC-00001605 SANYO Semiconductors DATA SHEET MCH6121 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifi er www.semiconductor-sanyo.com/network

No. A1286-2/4 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= -12V, IE=0A -0.1 μA Emitter Cutoff Current I EBO VEB= -4V, IC=0A -0.1 μA DC Current Gain h FE VCE= -2V, IC= -500mA 200 560 Gain-Bandwidth Product f T VCE= -2V, IC= -500mA 380 MHz Output Capacitance Cob V CB= -10V, f=1MHz 40 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C= -1.5A, IB= -30mA -110 -165 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= -1.5A, IB= -30mA -0.85 -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC= -10μA, IE=0A -15 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC= -1mA, RBE=∞ -12 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= -10μA, IC=0A -5 V Turn-On Time t on See specifi ed Test Circuit. 30 ns Storage Time t stg See specifi ed Test Circuit. 90 ns Fall Time t f See specifi ed Test Circuit. 14 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7022A-007 VR 1kΩ VCC= --5VVBE=5V --20IB1=20IB2=IC=--1.5A + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IT04544 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --2.0 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --1.8 --2mA --4mA --6mA --8mA --10mA--12mA --16mA --14mA IB=0mA IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V IT04545 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 VCE=--2V °CTa=75 --25

No. A1286-3/4 Collector Current, IC -- A IT04546 hFE -- IC DC Current Gain, hFE 100 0.01 1000 VCE=--2V Ta=75°C --25°C 25°C IT04547 --0.01 --0.1 --1.023 57 23 5 7 23 5 1000 100 fT -- IC VCE= --2V Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz 100 --1.0 --10 23 5 7 23 IT04548 Cob -- VCB f=1MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF --1.0 --10 --100 VCE(sat) -- IC IT04549 IC / IB=20 25°C Ta=75 --25 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV --0.01 --0.1 --1.023 5 7 23 5 7 23 5 --10 --100 VCE(sat) -- IC IC / IB=50 25°C Ta=75 --25 IT04550 Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VBE(sat) -- IC IT04551 --0.1 --1.0 --0.01 --0.123 5 7 --1.023 5 7 23 5 7 IC / IB=50 25°CTa=75°C --25°C Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V --1.0 --10 20 40 60 80 100 120 1.0 0.8 0.6 0.4 0.2 1.2 140 160 --0.01 --0.1 IT13915IT13914 --0.01 --0.123 5 7 2 --1.035 7 2 --1035 7 2 3 IC= --3A ICP= --5A 1ms 10ms100ms DC operation (Ta =25 °C) 100 μs500 μs Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C ASO <100μs Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ta=25°C Single pulse When mounted on ceramic substrate (600mm2×0.8mm) When mounted on ceramic substrate (600mm 2×0.8mm)

No. A1286-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2008. Specifi cations and information herein are subject to change without notice.