MCH6001 SANYO | Alldatasheet

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Technical content

Features

  • Low-noise use : NF=1.2dB typ (f=1GHz).
  • High cut-off frequency : f T=16GHz typ (VCE=5V).
  • High gain : |S21e| =16dB typ (f=1GHz).
  • Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 15 V Collector-to-Emitter Voltage V CEO 8V Emitter-to-Base Voltage V EBO 2V Collector Current I C 150 mA Collector Dissipation P C When mounted on glass epoxy substrate 1unit 400 mW Total Dissipation P T When mounted on glass epoxy substrate 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=5V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 1.0 μA DC Current Gain h FE VCE=5V, IC=50mA 60 150 Gain-Bandwidth Product f T VCE=5V, IC=50mA 13 16 GHz Marking : GT Continued on next page. Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. N1809AB TK IM TC-00002075 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er www.semiconductor-sanyo.com/network

No. A1601-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Gain |S21e| VCE=5V, IC=50mA, f=1GHz 16 dB Noise Figure NF V CE=1V, IC=10mA, f=1GHz 1.2 1.8 dB Package Dimensions Marking unit : mm (typ) 7022A-019 Electrical Connection 1 : Base1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Collector1 SANYO : MCPH6 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 654 123 654 12 3 456 1 : Base1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Collector1 Top view GT B1 E1 C2 C1 E2 B2 (Top view) IT13901 150 120 IT13902 06 8 42 100 140 120 VCE =1V IB=0mA 1.5mA 1.2mA 0.9mA 0.3mA 0.6mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA

No. A1601-3/4 Collector Current, IC -- mA Noise Figure, NF -- dB IT13908 NF -- IC |S21e|2 -- IC Collector Current, IC -- mA Forward Transfer Gain, |S21e|2 -- dB fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHzCollector Dissipation, PT, PC -- mW PT, PC -- Ta Ambient Temperature, Ta -- °C 1.0 27 35 10 27 35 100 VCE=1V f=1GHz 0.1 23 5 7 1.0 23 5 7 10 1.0 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF IT13905 f=1MHz 1.0 23 5 7 2 10 35 7 2 100 IT15151 100 1.0 100 22 35 7 10 235 7 IT15152 0 20 40 60 80 100 120 140 160 IT15153 100 400 300 200 700 600 500 1.0 PC 1unit PT Total dissipation When mounted on glass epoxy substrate IT13903 0.1 23 5 7 1.0 23 5 7 10 1.0 IT13904 100 325 7 3 25 7 3 2 VCE=5V 1.0 10 100 f=1MHz hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF

No. A1601-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2009. Specifi cations and information herein are subject to change without notice.