MCH5908

MCH5908 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting efficiency greatly.
• The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSX 15 V Gate-to-Drain Voltage V GDS - -15 V Gate Voltage I G 10 mA Drain Current I D 50 mA Allowable Power Dissipation P D 1 unit 200 mW Total Power Dissipation P T 300 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDS IG=- -10μA, VDS=0V - -15 V Gate-to-Source Leakage Current I GSS VGS=- -10V, VDS=0V - -1.0 nA Cutoff Voltage V GS(off) V DS=5V, ID=100μA - -0.3 - -0.7 - -1.5 V Drain Current I DSS VDS=5V, VGS=0V 10.0* 32.0* mA The specifications shown above are for each individual J-FET. Continued on next page. * : The MCH5908 is classified by IDSS as follows (unit : mA). Marking KG KH Rank G H IDSS(mA) 10 to 20 16 to 32 www.semiconductor-sanyo.com/network Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 22410AC TK IM TC-00002292 SANYO Semiconductors DATA SHEET MCH5908 N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications

No. A1218-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Forward Transfer Admittance ⏐yfs⏐ VDS=5V, VGS=0V, f=1kHz 24 35 mS Input Capacitance Ciss V DS=5V, VGS=0V, f=1MHz 10.5 pF Reverse Transfer Capacitance Crss V DS=5V, VGS=0V, f=1MHz 3.5 pF Noise Figure NF V DS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB Package Dimensions Marking unit : mm (typ) 7021A-009 Electrical Connection 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 SANYO : MCPH5 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 123 12 3 5 4 13 2 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 Top view ID -- VDS20 ITR02749 ID -- VDS --0.1V VGS=0V --0.2V --0.3V --0.4V --0.5V--0.6V--0.7V 2 4 6 8 10 12 --0.1V --0.2V --0.3V --0.4V --0.5V --0.6V--0.7V ITR02750Drain-to-Source V oltage, VDS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Drain Current, ID -- mA VGS=0V K 123 Rank 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1

No. A1218-3/4 Crss -- VDS NF -- f ITR02758 0.01 2 0.1 1.0 10 100 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 VDS=5V ID=1mA Rg=1kΩ Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Frequency, f -- kHz Noise Figure, NF -- dB IT04227 Ciss -- VDSVGS(off) -- IDSS 7 10 23 5 1.0 VDS=5V ID=100μA Drain Current, IDSS -- mA Cutoff V oltage, VGS(off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF ⏐yfs⏐ -- ID IT04225 ⏐yfs⏐ -- IDSS IT04226 3 1.0 10752 3 5 7 2 3 5 VDS=5V f=1kHz IDSS =15mA 30mA 7 10 23 5 100 VDS=5V VGS=0V f=1kHz Drain Current, ID -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS Drain Current, IDSS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS IT13692 1.0 2 10 235 7 1.0 VGS=0V f=1MHz IT13691 23 5 7 23 1.0 10 VGS=0V f=1MHz ID -- VGS IT04224 ID -- VGS ITR02752 20mAIDSS =30mA 15mA 10mA VDS=5V IDSS=15mA Ta= --25 VDS=5V Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA

No. A1218-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. NF -- Rg ITR02759 IT15408 PT, PD -- Ta 0.1 2 1.0 10 100 1000 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 VDS=5V ID=1mA f=1kHz Signal Source Resistance, Rg -- kΩ Noise Figure, NF -- dB Ambient Temperature, Ta -- °C Allowable Power Dissipation, PT, PD -- mW 0 20 40 60 80 100 120 140 160 350 300 250 200 150 100 PT Total power dissipation PD 1unit