MCH4020_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low-noise use : NF=1.2dB typ (f=1GHz)
  • High cut-off frequency : f T=16GHz typ (VCE=5V)
  • High gain : |S21e| =17.5dB typ (f=1GHz)
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 15 V Collector-to-Emitter Voltage V CEO 8V Emitter-to-Base Voltage V EBO 2V Collector Current I C 150 mA Collector Dissipation P C 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Package Dimensions unit : mm (typ) 7020A-002

72512 TKIM/80608AB TIIM TC-00001498

http://semicon.sanyo.com/en/network MCH4020 NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifi er Product & Package Information

  • Package : MCPH4
  • JEITA, JEDEC : SC-82, SC-82AB, SOT-343
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection GT LOT No. LOT No. TL 1 : Collector 2 : Emitter 3 : Base 4 : Emitter SANYO : MCPH4 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 2-4 MCH4020-TL-H

No. A1280-2/11 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=5V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 1.0 μA DC Current Gain h FE VCE=5V, IC=50mA 60 150 Gain-Bandwidth Product f T VCE=5V, IC=50mA 13 16 GHz Forward Transfer Gain |S21e| VCE=5V, IC=50mA, f=1GHz 17.5 dB Noise Figure NF V CE=1V, IC=10mA, f=1GHz 1.2 1.8 dB Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

Ordering Information

Device Package Shipping memo MCH4020-TL-H MCPH4 3,000pcs./reel Pb Free and Halogen Free IT13901 150 120 IT13902 IT13903 0.1 23 5 7 1.0 23 5 7 10 1.0 IT13904 06 8 42 100 140 120 VCE =1V IB=0mA 1.5mA 100 325 7 3 25 7 3 2 VCE=5V 1.0 10 100 f=1MHz 1.2mA 0.9mA 0.3mA 0.6mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF

No. A1280-3/11 Collector Current, IC -- mA Noise Figure, NF -- dB IT13908 NF -- IC 1.0 23 5 7 2 10 35 7 2 35 7100 1000 |S21e|2 -- IC Collector Current, IC -- mA Forward Transfer Gain, |S21e|2 -- dB IT13906 100 1.0 100 22 35 7 10 235 7 35 7 1000 fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz IT13907 0 20 40 60 80 100 120 140 160 IT13909 Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C 150 100 300 250 200 450 400 350 1.0 27 35 10 27 35 100 VCE=1V f=1GHz 0.1 23 5 7 1.0 23 5 7 10 1.0 1.0 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF IT13905 f=1MHz VCE=5V f=1GHz VCE=5V f=1GHz

No. A1280-4/11 Lwe Lwb Cce Cbc Ceb Lfe Lfb Lfc IT13901 SPICE Parameters model: Gummel-Poon Parameter Value Unit Parameter Value Unit IS 2.155f A TF 6.700p S BF 122 XTF 50.00f NF 1.05 VTF 750.0m V V AF 8 V ITF 50 A IKF 206.4m A PTF 200.0m °C ISE 1.384p A CJC 175.0f F NE 2.278 VJC 200.0f V BR 14 MJC 1.150p NR 1.042 XCJC 1 VA R 4 V T R 0 S IKR 360.0m A FC 500.0m ISC 140.0f A CJS 550.0f F NC 1.6 VJS 150.0m V RB 2 Ω MJS 136.0m IRB 1.5 A Lfc 110.0p H RBM 25.00m Ω Lwb 850.0p H RE 450.0m Ω Lfb 73.0p H RC 1.2 Ω Lwe 145.0p H XTB 0 Lfe 280.0p H EG 1.11 eV Cbc 325.0f F XTI 1 Ceb 175.0f F CJE 2.476p F Cce 120.0f F VJE 750.0m V MJE 10.00m Schematic *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.

No. A1280-5/11 S Parameters (Common emitter) VCE=1V , IC=10mA VCE=1V , IC=50mA

No. A1280-6/11 S Parameters (Common emitter) VCE=1V , IC=100mA VCE=3V , IC=10mA

No. A1280-7/11 S Parameters (Common emitter) VCE=3V , IC=50mA VCE=3V , IC=100mA

No. A1280-8/11 S Parameters (Common emitter) VCE=5V , IC=10mA VCE=5V , IC=50mA

No. A1280-9/11 Embossed Taping Specifi cation MCH4020-TL-H

No. A1280-10/11 Outline Drawing Land Pattern Example MCH4020-TL-H Mass (g) Unit 0.008 * For reference mm Unit: mm 1.3 0.4 2.1 0.6

PS No. A1280-11/11 This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.