MCH4009_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low-noise use : NF=1.1dB typ (f=2GHz)
  • High cut-off frequency : f T=25GHz typ (VCE=3V)
  • Low operating voltage
  • High gain : |S21e|2 =17dB typ (f=2GHz)
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 10 V Collector-to-Emitter Voltage V CEO 3.5 V Emitter-to-Base Voltage V EBO 2.5 V Collector Current I C 40 mA Collector Dissipation P C 120 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7020A-002

90512 TKIM/53106AB MSIM TB-00002266

http://www.sanyosemi.com/en/network/ MCH4009 Product & Package Information

  • Package : MCPH4
  • JEITA, JEDEC : SC-82, SC-82AB, SOT-343
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection GG LOT No. LOT No. TL 1 : Collector 2 : Emitter 3 : Base 4 : Emitter SANYO : MCPH4 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 2, 4 MCH4009-TL-H NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifi er and OSC Applications

No. A0389-2/15 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=5V, IE=0A 1.0 μA Emitter Cutoff Current I EBO VEB=1V, IC=0A 1.0 μA DC Current Gain h FE VCE=1V, IC=5mA 50 120 Gain-Bandwidth Product f T VCE=3V, IC=20mA 20 25 GHz Reverse Transfer Capacitance Cre VCB=1V, f=1MHz 0.15 pF Forward Transfer Gain |S21e| 1V CE=1V, IC=5mA, f=2GHz 9 13.5 dB |S21e| 2V CE=3V, IC=20mA, f=2GHz 17 dB Noise Figure NF V CE=1V, IC=5mA, f=2GHz 1.1 1.5 dB 1dB Compression Point P O(1dB) VCE=3V, IC=20mA, f=2GHz 13.5 dBm 3rd Order Intercept Point OIP 3 VCE=3V, IC=20mA, f=2GHz 23 dBm Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

Ordering Information

Device Package Shipping memo MCH4009-TL-H MCPH4 3,000pcs./reel Pb Free and Halogen Free IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF IT11105 IT11106 IT11107 0.1 23 5 7 1.0 23 5 7 10 0.1 IT11108 03 4 21 VCE =1V 100 325 7 3 25 7 3 25 70.1 1.0 10 100 f=1MHz IB=0μA 30μA 60μA 90μA 120μA 150μA 180μA 210μA 240μA 270μA 300μA VCE=3V

No. A0389-3/15 Input Level, Pin -- dB Output Level, Pout -- dB Pout -- Pin Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC ⏐S21e⏐2 -- IC Collector Current, IC -- mA Forward Transfer Gain, ⏐S21e⏐2 -- dB fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C --30 --10 --20 IT11112IT11111 VCE=3V IC=20mA f=2GHz 1.0 23 5 7 23 5 7 10 100 IT11109 100 1.0 23 5 7 10 23 5 7 100 IT11110 f=2GHz 0 25 50 75 100 125 150 175 IT11113 120 150 100 f=2GHz VCE=3V VCE=3V 0.1 27 35 1.0 27 35 10 27 35 100 ZS=50Ω ZS=Zsopt VCE=3V f=2GHz

No. A0389-4/15 Lwe Lwb Cec1 Ccb Cec2 Cbe1 Cbe2 Lle Llb LlcLwc IT11114 SPICE Parameters model: Gummel-Poon Parameter Value Unit Parameter Value Unit IS 38.78a A XTF 11.00f BF 107.6 VTF 81.1 V NF 1.002 ITF 1.55 A V AF 34.79 V PTF 32 °C IKF 199.6m A CJC 214.0f F ISE 138.1f A VJC 111.7m V NE 2.5 MJC 118.0m BR 1.5 XCJC 833.8m NR 1.05 TR 50.00p S V AR 200 V FC 8.105m IKR 20.00 μ A CJS 123.2f F ISC 0 A VJS 140.0f V NC 2 MJS 150 RB 8.5 Ω Lwb 415p H IRB 143.2m A Llb 210p H RBM 1.584 Ω Lwe 243.6p H RE 1.022 Ω Lle 12.8p H RC 3.675 Ω Lwc 330p H XTB 0 Llc 651.5p H EG 1.11 eV Ccb 26.7f F XTI 3 Cec1 185.4f F CJE 250.0f F Cec2 40f F VJE 23.00m V Cbe1 65f F MJE 21.60m Cbe2 25.2f F TF 5.398p S Schematic *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.

No. A0389-5/15 S Parameters (Common emitter) VCE=1V , IC=5mA

No. A0389-6/15 S Parameters (Common emitter) VCE=1V , IC=10mA

No. A0389-7/15 S Parameters (Common emitter) VCE=1V , IC=20mA

No. A0389-8/15 S Parameters (Common emitter) VCE=1V , IC=30mA

No. A0389-9/15 S Parameters (Common emitter) VCE=3V , IC=5mA

No. A0389-10/15 S Parameters (Common emitter) VCE=3V , IC=10mA

No. A0389-11/15 S Parameters (Common emitter) VCE=3V , IC=20mA

No. A0389-12/15 S Parameters (Common emitter) VCE=3V , IC=30mA

No. A0389-13/15 Embossed Taping Specifi cation MCH4009-TL-H

No. A0389-14/15 Outline Drawing Land Pattern Example MCH4009-TL-H Mass (g) Unit 0.008 * For reference mm Unit: mm 1.3 0.4 2.1 0.6

PS No. A038915/15 This catalog provides information as of September, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.