MCH4009 SANYO | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Features
- Low-noise use : NF=1.1dB typ (f=2GHz).
- High cut-off frequency : fT=25GHz typ (VCE =3V).
- Low operating voltage.
- High gain : S21e2=17dB typ (f=2GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 10 V Collector-to-Emitter Voltage VCEO 3.5 V Emitter-to-Base Voltage VEBO 2.5 V Collector Current IC 40 mA Collector Dissipation PC 120 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB =5V, IE=0A 1.0 µA Emitter Cutoff Current IEBO VEB =1V, IC =0A 1.0 µA DC Current Gain hFE VCE =1V, IC =5mA 50 120 Gain-Bandwidth Product fT VCE =3V, IC =20mA 20 25 GHz Reverse Transfer Capacitance Cre V CB =1V, f=1MHz 0.15 pF Forward Transfer Gain S21e 21V CE =1V, IC =5mA, f=2GHz 9 13.5 dB S21e 22V CE =3V, IC =20mA, f=2GHz 17 dB Noise Figure NF V CE =1V, IC =5mA, f=2GHz 1.1 1.5 dB 1dB Compression Point PO(1dB) VCE =3V, IC =20mA, f=2GHz 13.5 dBm 3rd Order Intercept Point OIP3 VCE =3V, IC =20mA, f=2GHz 23 dBm Marking : GG 82306 / 53106AB MS IM TB-00002266 MCH4009 NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications SANYO Semiconductors DATA SHEET Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
No. A0389-2/13 Package Dimensions Type No. Indication unit : mm 7020A-002 1 : Collector 2 : Emitter 3 : Base 4 : Emitter SANYO : MCPH4 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. 1 : Collector 2 : Emitter 3 : Base 4 : Emitter Top view GG IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF IT11105 IT11106 IT11107 0.1 23 5 7 1.0 23 5 7 10 0.1 IT11108 03 4 21 VCE =1V 100 325 7 3 25 7 3 25 70.1 1.0 10 100 f=1MHz IB =0µA 30µA 60µA 90µA 120µA 150µA 180µA 210µA 240µA 270µA 300µA V CE =3V
No. A0389-3/13 Input Level, Pin -- dB Output Level, Pout -- dB Pout -- Pin Collector Current, IC -- mA Noise Figure, NF -- dB NF -- IC S21e2 -- IC Collector Current, IC -- mA Forward Transfer Gain, S21e2 -- dB fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz Collector Dissipation, PC -- mW PC -- Ta Ambient Temperature, Ta -- °C --30 --10 --20 IT11112IT11111 V CE =3V IC =20mA f=2GHz 1.0 23 5 7 23 5 7 10 100 IT11109 100 1.0 23 5 7 10 23 5 7 100 IT11110 f=2GHz 0 25 50 75 100 125 150 175 IT11113 120 150 100 f=2GHz V CE =3V V CE =3V 0.1 27 35 1.0 27 35 10 27 35 100 Z S=50Ω Z S=Zsopt V CE =3V f=2GHz
No. A0389-4/13 SPICE Parameters model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 38.78a A XTF 11.00f BF 107.6 VTF 81.1 V NF 1.002 ITF 1.55 A V AF 34.79 V PTF 32 °C IKF 199.6m A CJC 214.0f F ISE 138.1f A VJC 111.7m V NE 2.5 MJC 118.0m BR 1.5 XCJC 833.8m NR 1.05 TR 50.00p S V AR 200 V FC 8.105m IKR 20.00m A CJS 123.2f F ISC 0 A VJS 140.0f V NC 2 MJS 150 RB 8.5 Ω Lwb 415p H IRB 143.2 µ A Llb 210p H RBM 1.584 Ω Lwe 243.6p H RE 1.022 Ω Lle 12.8p H RC 3.675 Ω Lwc 330p H XTB 0 Llc 651.5p H EG 1.11 eV Ccb 26.7f F XTI 3 Cec1 185.4f F CJE 250.0f F Cec2 40f F VJE 23.00m V Cbe1 65f F MJE 21.60m Cbe2 25.2f F TF 5.398p S Schematic *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Lwe Lwb Cec1 Ccb Cec2 Cbe1 Cbe2 Lle Llb LlcLwc IT11114
No. A0389-5/13 S Parameters (Common emitter) V CE =1V , IC =5mA
No. A0389-6/13 S Parameters (Common emitter) V CE =1V , IC =10mA
No. A0389-7/13 S Parameters (Common emitter) V CE =1V , IC =20mA
No. A0389-8/13 S Parameters (Common emitter) V CE =1V , IC =30mA
No. A0389-9/13 S Parameters (Common emitter) V CE =3V , IC =5mA
No. A0389-10/13 S Parameters (Common emitter) V CE =3V , IC =10mA
No. A0389-11/13 S Parameters (Common emitter) V CE =3V , IC =20mA
No. A0389-12/13 S Parameters (Common emitter) V CE =3V , IC =30mA
No. A0389-13/13PS This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.