MCH3312 SANYO | Alldatasheet

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D -- 2 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -8 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 1W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -30 V Zero-Gate Voltage Drain Current I DSS VDS =- -30V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -1A 1.4 2.0 S R DS (on)1 I D =- -1A, VGS =- -10V 110 145 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =- -0.5A, VGS =- -4V 205 290 m Ω Marking : JM Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH3312 Package Dimensions unit : mm 2167A [MCH3312] P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.250.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15

71801 TS IM TA-3098

No.7009-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =- -10V, f=1MHz 200 pF Output Capacitance Coss V DS =- -10V, f=1MHz 47 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 32 pF Turn-ON Delay Time t d(on) See specified Test Circuit 7.2 ns Rise Time t r See specified Test Circuit 2.9 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 21 ns Fall Time t f See specified Test Circuit 8.7 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -2A 5.5 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -2A 0.98 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -2A 0.82 nC Diode Forward Voltage V SD IS=- -2A, VGS =0 - -0.85 - -1.5 V Switching Time Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --1A R L=15Ω VDD = --15V VOUT MCH3312 VIN --10V VIN --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 R DS (on) -- VGS IT03225 --0.4 --0.8 --1.6 --2.0 --0.2 --1.2 100 150 200 250 300 350 400 ID -- VDS V GS = --3.0V --3.5V IT03223 ID -- VGS V DS = --10V --25 Ta=75 IT03224 R DS (on) -- Ta IT03226 100 150 200 250 300 350 400 Ta=25°C --1.0A ID = --0.5A ID = --1.0A, VGS = --10V ID= --0.5A, V GS = --4V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ

No.7009-3/4 01234 6 5 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 VGS -- Qg V DS = --10V ID = --2A IT03231 20 40 0.2 0.4 0.6 0.8 1.2 1.0 60 80 100 120 140 160 PD -- Ta IT03233 A S O --10 --1.0 --0.1 --0.01 --0.1 23 5 7 --1.0--0.0123 5 7 23 5 7 7 --10 23 5 --100 IT03232 IDP = --8A ID = --2A Operation in this area is limited by RDS (on). 100 µs 100msDC operation 1ms 10ms <10µs 100 1.0 SW Time -- ID V DD = --15V V GS = --10V td(on) td(off) tr tf IT03229 Ciss, Coss, Crss -- VDS IT03227 1.0 0.1 yfs -- ID V DS = --10V 75°C 25°C Ta= --25 IT03228 --0.01 --0.1 --10 --1.0 IF -- VSD V GS =0 --25 Ta=75 100 f=1MHz Ciss Coss Crss IT03230 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ta=25°C Single pulse Mounted on a ceramic board(900mm 25 0.8mm) Mounted on a ceramic board(900mm 250.8mm)

No.7009-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS